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Uwe Zeitner

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Published work

2 published item(s)

preprint2026arXiv

Ultra-shallow EUV and soft X-ray gratings fabricated by broad-beam nitrogen ion irradiation

Controlled and precise fabrication of structures with heights in the range of single digit nanometres is one of the challenges for diffraction gratings operating near-normal incidence in the extreme ultraviolet (EUV) and soft X-ray range. Here, we expand on previous research utilizing swelling of silicon after irradiation with ions as alternative to conventional dry etching. By irradiating silicon through a mask with a broad beam of nitrogen ions, we realized lamellar gratings in a precise and well controlled process. We were able to fabricate gratings with structure heights between (1.00 +/- 0.05) nm to (10.0 +/- 0.5) nm and a pitch of 1 micrometre, which is suitable for both EUV and soft X-ray applications. A variation of ion energy from 20 keV to 40 keV further expands the foundations of this process and yielded an additional parameter to control the resulting structure height and shape.

preprint2022arXiv

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO$_2$ interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO$_2$) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.