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Adriana Szeghalmi

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cond-mat.mtrl-sci physics.app-ph physics.optics cond-mat.mes-hall

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preprint2026arXiv

Systematic Study of Amorphous ABC Heterostructures at the Atomic Scale as a Second-Order Nonlinear Optical Metamaterial

Systematic exploration of amorphous ABC heterostructures revealed that nanoscale morphological modifications markedly improved their artificial bulk second-order susceptibility. These amorphous birefringent heterostructures were fabricated through plasma-enhanced atomic layer deposition of three oxides, effectively breaking the centrosymmetry on the nanoscale. We observe a dependence of the optical nonlinearity on the thickness variation of three constituent materials, SiO$_2$, TiO$_2$, and Al$_2$O$_3$, ranging from tens of nanometers to the atomic scale, and these thin films exhibit second-order susceptibility at their interfaces. Our findings reveal that the enhancement of nonlinear optical properties is strongly correlated with a high density of layers and superior interface quality, where the interface second-order nonlinearity transitions to bulk-like second-harmonic generation. An effective bulk second-order susceptibility of $χ_{zzz} = 2.0 \pm 0.2$~pm/V at the wavelength of 1032~nm is achieved, comparable to typical values for conventional monocrystalline nonlinear materials.

preprint2022arXiv

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO$_2$ interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO$_2$) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.

preprint2016arXiv

Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range

Wire grid polarizers (WGPs), periodic nano-optical meta-surfaces, are convenient polarizing elements for many optical applications. However, they are still inadequate in the deep ultraviolet spectral range. We show that to achieve high performance ultraviolet WGPs a material with large absolute value of the complex permittivity and extinction coefficient at the wavelength of interest has to be utilized. This requirement is compared to refractive index models considering intraband and interband absorption processes. We elucidate why the extinction ratio of metallic WGPs intrinsically humble in the deep ultraviolet, whereas wide bandgap semiconductors are superior material candidates in this spectral range. To demonstrate this, we present the design, fabrication and optical characterization of a titanium dioxide WGP. At a wavelength of 193 nm an unprecedented extinction ratio of 384 and a transmittance of 10 % is achieved.