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Uwe S. Pracht

Uwe S. Pracht contributes to research discovery and scholarly infrastructure.

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cond-mat.supr-con cond-mat.str-el

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preprint2016arXiv

Superconducting Energy Scales and Anomalous Dissipative Conductivity in Thin Films of Molybdenum Nitride

We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K $\ge{T_c}\ge$ 2.78 K. Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm$^{-1}$ (0.1 to 1.1 THz). The superconducting energy scales, i.e. the critical temperature $T_c$, the pairing energy $Δ$, and the superfluid stiffness $J$, and the superfluid density $n_s$ can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.

preprint2016arXiv

THz conductivity of Sr$_{1-x}$Ca$_x$RuO$_3$

We investigate the optical conductivity of Sr$_{1-x}$Ca$_x$RuO$_3$ across the ferromagnetic to paramagnetic transition that occurs at $x=0.8$. The thin films were grown by metalorganic aerosol deposition with $0 \leq x \leq 1$ onto NdGaO$_3$ substrates. We performed THz frequency domain spectroscopy in a frequency range from 3~cm$^{-1}$ to 40~cm$^{-1}$ (100~GHz to 1.4~THz) and at temperatures ranging from 5~K to 300~K, measuring transmittivity and phase shift through the films. From this we obtained real and imaginary parts of the optical conductivity. The end-members, ferromagnetic SrRuO$_3$ and paramagnetic CaRuO$_3$, show a strongly frequency-dependent metallic response at temperatures below 20~K. Due to the high quality of these samples we can access pronounced intrinsic electronic contributions to the optical scattering rate, which at 1.4~THz exceeds the residual scattering rate by more than a factor of three. Deviations from a Drude response start at about 0.7~THz for both end-members in a remarkably similar way. For the intermediate members a higher residual scattering originating in the compositional disorder leads to a featureless optical response, instead. The relevance of low-lying interband transitions is addressed by a calculation of the optical conductivity within density functional theory in the local density approximation (LDA).

preprint2015arXiv

Charge Carrier Dynamics of the Heavy Fermion Metal CeCoIn$_5$ Probed by THz Spectroscopy

We discuss the charge carrier dynamics of the heavy-fermion compound CeCoIn$_5$ in the metallic regime measured by means of quasi-optical THz spectroscopy. The transmittance of electromagnetic radiation through a CeCoIn$_5$ thin film on a dielectric substrate is analyzed in the single-particle Drude framework. We discuss the temperature dependence of the electronic properties, such as the scattering time and dc-conductivity and compare with transport measurements of the sheet resistance. Towards low temperatures, we find an increasing mismatch between the results from transport and Drude-analyzed optical measurements and a growing incapability of the simple single-particle picture describing the charge dynamics, likely caused by the evolving heavy-fermion nature of the correlated electron system.

preprint2015arXiv

Shaping a superconducting dome: Enhanced Cooper-pairing versus suppressed phase coherence in coupled aluminum nanograins

Deterministic enhancement of the superconducting (SC) critical temperature $T_c$ is a long-standing goal in material science. One strategy is engineering a material at the nanometer scale such that quantum confinement strengthens the electron pairing, thus increasing the superconducting energy gap $Δ$, as was observed for individual nanoparticles. A true phase-coherent SC condensate, however, can exist only on larger scales and requires a finite phase stiffness $J$. In the case of coupled aluminium (Al) nanograins, $T_c$ can exceed that of bulk Al by a factor of three, but despite several proposals the relevant mechanism at play is not yet understood. Here we use optical spectroscopy on granular Al to disentangle the evolution of the fundamental SC energy scales, $Δ$ and $J$, as a function of grain coupling. Starting from well-coupled arrays, $Δ$ grows with progressive grain decoupling, causing the increasing of $T_c$. As the grain-coupling is further suppressed, $Δ$ saturates while $T_c$ decreases, concomitantly with a sharp decline of $J$. This crossover to a phase-driven SC transition is accompanied by an optical gap persisting above $T_c$. These findings identify granular Al as an ideal playground to test the basic mechanisms that enhance superconductivity by nano-inhomogeneity.

preprint2014arXiv

The Higgs Mode in Disordered Superconductors Close to a Quantum Phase Transition

The concept of mass-generation via the Higgs mechanism was strongly inspired by earlier works on the Meissner-Ochsenfeld effect in superconductors. In quantum field theory, the excitations of longitudinal components of the Higgs field manifest as massive Higgs bosons. The analogous Higgs mode in superconductors has not yet been observed due to its rapid decay into particle-hole pairs. Following recent theories, however, the Higgs mode should decrease below the pairing gap $2Δ$ and become visible in two-dimensional systems close to the superconductor-insulator transition (SIT). For experimental verification, we measured the complex terahertz transmission and tunneling density of states (DOS) of various thin films of superconducting NbN and InO close to criticality. Comparing both techniques reveals a growing discrepancy between the finite $2Δ$ and the threshold energy for electromagnetic absorption which vanishes critically towards the SIT. We identify the excess absorption below $2Δ$ as a strong evidence of the Higgs mode in two dimensional quantum critical superconductors.

preprint2013arXiv

Electrodynamics of the Superconducting State in Ultra-Thin Films at THz Frequencies

We report on terahertz frequency-domain spectroscopy (THz-FDS) experiments in which we measure charge carrier dynamics and excitations of thin-film superconducting systems at low temperatures in the THz spectral range. The characteristics of the set-up and the experimental procedures are described comprehensively. We discuss the single-particle density of states and a theory of electrodynamic absorption and optical conductivity of conventional superconductors. We present the experimental performance of the setup at low temperatures for a broad spectral range from 0.1 - 1.1 THz by the example of ultra-thin films of weakly disordered superconductors niobium nitride (NbN) and tantalum nitride (TaN) with different values of critical temperatures. Furthermore, we analyze and interpret our experimental data within the framework of conventional Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity.

preprint2012arXiv

Direct observation of the superconducting gap in thin film of titanium nitride using terahertz spectroscopy

We report on the charge carrier dynamics of superconducting titanium nitride (TiN) in the frequency range 90 - 510 GHz (3 - 17 cm-1). The experiments were perfomed on a 18 nm thick TiN film with a critical temperature of 3.4 K. Measurements were carried out from room temperature down to 2 K, and in magnetic fields up to 7 T. We extract the real and imaginary parts of the complex conductivity as a function of frequency and temperature, directly providing the superconducting energy gap. Further analysis yields the superconducting London penetration depth. The findings as well as the normal state properties strongly suggest conventional BCS superconductivity, underlined by the BCS ratio 3.44. Detailed analysis of the charge carrier dynamics of the silicon substrate is also discussed.