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Researcher profile

Uwe Bauer

Uwe Bauer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

5 published item(s)

preprint2014arXiv

Large voltage-induced modification of spin-orbit torques in Pt/Co/GdOx

We report on large modifications of current-induced spin-orbit torques in a gated Pt/Co/Gd-oxide microstrip due to voltage-driven O$^{2-}$ migration. The Slonczewski-like and field-like torques are quantified using a low-frequency harmonic technique based on the polar magneto-optical Kerr effect. Voltage-induced oxidation of Co enhances the Slonczewski-like torque by as much as an order of magnitude, and simultaneously reduces the anisotropy energy barrier by a factor of ~5. Such magneto-ionic tuning of interfacial spin-orbit effects may significantly enhance the efficiency of magnetization switching and provide additional degrees of freedom in spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magneto-ionic Control of Interfacial Magnetism

In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magnetoelectric coupling mechanisms. We directly observe, for the first time, in situ voltage driven O$^{2-}$ migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.6 erg/cm$^2$. We exploit the thermally-activated nature of ion migration to dramatically increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin Hall torque magnetometry of Dzyaloshinskii domain walls

Current-induced domain wall motion in the presence of the Dzyaloshinskii-Moriya interaction (DMI) is experimentally and theoretically investigated in heavy-metal/ferromagnet bilayers. The angular dependence of the current-induced torque and the magnetization structure of Dzyaloshinskii domain walls are described and quantified simultaneously in the presence of in-plane fields. We show that the DMI strength depends strongly on the heavy metal, varying by a factor of 20 between Ta and Pa, and that strong DMI leads to wall distortions not seen in conventional materials. These findings provide essential insights for understanding and exploiting chiral magnetism for emerging spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Current-driven dynamics of chiral ferromagnetic domain walls

In most ferromagnets the magnetization rotates from one domain to the next with no preferred handedness. However, broken inversion symmetry can lift the chiral degeneracy, leading to topologically-rich spin textures such as spin-spirals and skyrmions via the Dzyaloshinskii-Moriya interaction (DMI). Here we show that in ultrathin metallic ferromagnets sandwiched between a heavy metal and an oxide, the DMI stabilizes chiral domain walls (DWs) whose spin texture enables extremely efficient current-driven motion. We show that spin torque from the spin Hall effect drives DWs in opposite directions in Pt/CoFe/MgO and Ta/CoFe/MgO, which can be explained only if the DWs assume a Néel configuration with left-handed chirality. We directly confirm the DW chirality and rigidity by examining current-driven DW dynamics with magnetic fields applied perpendicular and parallel to the spin spiral. This work resolves the origin of controversial experimental results and highlights a new path towards interfacial design of spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Voltage-Gated Modulation of Domain Wall Velocity in an Ultrathin Metallic Ferromagnet

The influence of gate voltage, temperature and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/GdOx films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The DW creep velocity can be controlled by an electric field applied to the Co/GdOx interface via a linear modulation of the activation energy barrier with gate voltage. At low speeds, the DW velocity can be changed significantly by a gate voltage, but the effect is diminished as the DW velocity increases, which limits electric field control of fast DW motion.

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