Researcher profile

Geoffrey S. D. Beach

Geoffrey S. D. Beach contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Photon correlation spectroscopy with heterodyne mixing based on soft-x-ray magnetic circular dichroism

Many magnetic equilibrium states and phase transitions are characterized by fluctuations. Such magnetic fluctuation can in principle be detected with scattering-based x-ray photon correlation spectroscopy (XPCS). However, in the established approach of XPCS, the magnetic scattering signal is quadratic in the magnetic scattering cross section, which results not only in often prohibitively small signals but also in a fundamental inability to detect negative correlations (anticorrelations). Here, we propose to exploit the possibility of heterodyne mixing of the magnetic signal with static charge scattering to reconstruct the first-order (linear) magnetic correlation function. We show that the first-order magnetic scattering signal reconstructed from heterodyne scattering now directly represents the underlying magnetization texture. Moreover, we suggest a practical implementation based on an absorption mask rigidly connected to the sample, which not only produces a static charge scattering signal but also eliminates the problem of drift-induced artificial decay of the correlation functions. Our method thereby significantly broadens the range of scientific questions accessible by magnetic x-ray photon correlation spectroscopy.

preprint2022arXiv

Role of substrate clamping on anisotropy and domain structure in the canted antiferromagnet $α$-Fe$_2$O$_3$

Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $α$-Fe$_2$O$_3$. We find that the internal destressing fields driving the formation of domains do not follow the crystal symmetry of $α$-Fe$_2$O$_3$, but fluctuate due to substrate clamping. This leads to an overall isotropic distribution of the Néel order with locally varying effective anisotropy in antiferromagnetic thin films. Furthermore, we show that the weak ferromagnetic nature of $α$-Fe$_2$O$_3$ leads to a qualitatively different dependence on magnetic field compared to collinear antiferromagnets such as NiO. The insights gained from our work serve as a foundation for further studies of electrical and optical manipulation of the domain structure of antiferromagnetic thin films.

preprint2020arXiv

Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers

We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the damping-like spin-orbit torque decreases substantially for all samples with a spacer layer compared to the reference Pt/Co bilayer, consistently with the opposite sign of the atomic spin-orbit coupling constant of the spacer elements relative to Pt. The reduction of the damping-like torque is monotonic with atomic number for the isoelectronic 3d, 4d, and 5d elements, with the exception of V that has a stronger effect than Cr. The field-like spin-orbit torque almost vanishes for all spacer layers irrespective of their composition, suggesting that this torque predominantly originates at the Pt/Co interface. The anomalous Hall effect, magnetoresistance, and saturation magnetization are also all reduced substantially, whereas the sheet resistance is increased in the presence of the spacer layer. Finally, we evidence a correlation between the amplitude of the spin-orbit torques, the spin Hall-like magnetoresistance, and the perpendicular magnetic anisotropy. These results highlight the significant influence of ultrathin spacer layers on the magnetotransport properties of heavy metal/ferromagnetic systems.

preprint2020arXiv

Fast magneto-ionic switching of interface anisotropy using yttria-stabilized zirconia gate oxide

Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetization toggle switching, tsw ~ 100 ms, at room temperature. However, the operation speed may need to be significantly improved to be used for modern electronic devices. Here, we demonstrate that the speed of proton-induced magnetization toggle switching largely depends on proton-conducting oxides. We achieve ~1 ms reliable (> 103 cycles) switching using yttria-stabilized zirconia (YSZ), which is ~ 100 times faster than the state-of-the-art magneto-ionic devices reported to date at room temperature. Our results suggest further engineering of the proton-conducting materials could bring substantial improvement that may enable new low-power computing scheme based on magneto-ionics.