BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Ursula Wurstbauer

Ursula Wurstbauer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gascond-mat.str-elphysics.app-phquant-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
11works
0followers
6topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

11 published item(s)

preprint2026arXiv

High-Energy Interlayer Exciton Ensembles in MoSe$_2$/WSe$_2$ Heterostructures by Laguerre-Gaussian Excitation

We reveal the higher energetic luminescence part of interlayer exciton ensembles in MoSe$_2$/WSe$_2$ heterostructures upon excitation by an optical Laguerre-Gaussian mode. The excitation is achieved with the help of a spatial light modulator giving rise to a ring-shaped distribution of interlayer excitons. A hyperspectral analysis of the exciton photoluminescence suggests that the excitation scheme allows the accumulation of high-energetic excitons in the rings' center. We discuss the mechanisms leading to such a distribution, including exciton-exciton interaction, phase-space filling, and an incomplete thermalization.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Domain Textures in the Fractional Quantum Hall Effect

Impacts of domain textures on low-lying neutral excitations in the bulk of fractional quantum Hall effect (FQHE) systems are probed by resonant inelastic light scattering. We demonstrate that large domains of quantum fluids support long-wavelength neutral collective excitations with well-defined wave vector (momentum) dispersion that could be interpreted by theories for uniform phases. Access to dispersive low-lying neutral collective modes in large domains of FQHE fluids such as long wavelength magnetorotons at filling factor v=1/3 offer significant experimental access to strong electron correlation physics in the FQHE.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Exciton manifolds in highly ambipolar doped WS2

The disentanglement of single and many particle properties in 2D semiconductors and their dependencies on high carrier concentration is challenging to experimentally study by pure optical means. We establish an electrolyte gated WS2 monolayer field-effect structure capable to shift the Fermi level from the valence into the conduction band suitable to optically trace exciton binding as well as the single particle band gap energies in the weakly doped regime. Combined spectroscopic imaging ellipsometry and photoluminescence spectroscopies spanning large n- and p-type doping with charge carrier densities up to 10^14 cm-2 enable to study screening phenomena and doping dependent evolution of the rich exciton manifold whose origin is controversially discussed in literature. We show that the two most prominent emission bands in photoluminescence experiments are due to the recombination of spin-forbidden and momentum-forbidden charge neutral excitons activated by phonons. The observed interband transitions are redshifted and drastically weakened under electron or hole doping. This field-effect platform is not only suitable for studying exciton manifold but is also suitable for combined optical and transport measurements on degenerately doped atomically thin quantum materials at cryogenic temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures

Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Optical dipole orientation of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks

We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 $\pm$ 1)% in-plane for R- and H-type stacking, independent of the excitation power and therefore the density of the exciton ensemble in the experimentally examined range. Finally, we discuss the limitations of the presented measurement technique to observe correlation effects in exciton ensembles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Condensation signatures of photogenerated interlayer excitons in a van der Waals heterostack

Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons have been elusive. We observe several criticalities in photogenerated exciton ensembles hosted in MoSe2-WSe2 heterostacks with respect to photoluminescence intensity, linewidth, and temporal coherence pointing towards the transition to a coherent quantum state. For this state, the occupation is 100 percent and the exciton diffusion length is increased. The phenomena survive above 10 kelvin, consistent with the predicted critical condensation temperature. Our study provides a first phase-diagram of many-body interlayer exciton states including Bose Einstein condensation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Light-matter interaction in van der Waals heterostructures

Even if individual two-dimensional materials own various interesting and unexpected properties, the stacking of such layers leads to van der Waals solids which unite the characteristics of two dimensions with novel features originating from the interlayer interactions. In this topical review, we cover fabrication and characterization of van der Waals heterosructures with a focus on heterobilayers made of monolayers of semiconducting transition metal dichalcogenides. Experimental and theoretical techniques to investigate those heterobilayers are introduced. Most recent findings focusing on different transition metal dichalcogenides heterostructures are presented and possible optical transitions between different valleys, appearance of moire patterns and signatures of moire excitons are discussed. The fascinating and fast growing research on van der Waals hetero-bilayers provide promising insights required for their application as emerging quantum-nano materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Scalable single-photon sources in atomically thin MoS2

Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Atomistic defect states as quantum emitters in monolayer MoS$_2$

Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overcome this challenge by controllably irradiating single-layer MoS$_{2}$ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion bombarded MoS$_{2}$ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons at optical wavelengths in an energy window of one to two hundred meV below the neutral 2D exciton of MoS$_{2}$. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron-hole complexes at defect states generated by the helium ion bombardment. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and exotic Hubbard systems.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Control of the orbital character of indirect excitons in MoS2/WS2 heterobilayers

Valley selective hybridization and residual coupling of electronic states in commensurate van der Waals heterobilayers enable the control of the orbital character of interlayer excitons. We demonstrate electric field control of layer index, orbital character, lifetime and emission energy of indirect excitons in MoS2/WS2 heterobilayers embedded in an vdW field effect structure. Different excitonic dipoles normal to the layers are found to stem from bound electrons and holes located in different valleys of MoS2/WS2 with a valley selective degree of hybridization. For the energetically lowest emission lines, coupling of electronic states causes a field-dependent level anticrossing that goes along with a change of the IX lifetime from 400 ns to 100 ns. In the hybridized regime the exiton is delocalized between the two constituent layers, whereas for large positive or negative electric fields, the layer index of the bound hole is field-dependent. Our results demonstrate the design of novel van der Waals solids with the possibility to in-situ control their physical properties via external stimuli such as electric fields.

0 citations0 reviewsNo code linkedOpen access