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Ulf Jansson

Ulf Jansson appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-phphysics.atm-clusphysics.comp-ph

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Published work

10 published item(s)

preprint2015arXiv

Structure and bonding in amorphous iron carbide thin films

We investigate the amorphous structure, chemical bonding, and electrical properties of magnetron sputtered Fe1-xCx (0.21<x<0.72) thin films. X-ray, electron diffraction and transmission electron microscopy show that the Fe1-xCx films are amorphous nanocomposites, consisting of a two-phase domain structure with Fe-rich carbidic FeCy, and a carbon-rich matrix. Pair distribution function analysis indicates a close-range order similar to those of crystalline Fe3C carbides in all films with additional graphene-like structures at high carbon content (71.8 at% C). From X-ray photoelectron spectroscopy measurements, we find that the amorphous carbidic phase has a composition of 15-25 at% carbon that slightly increases with total carbon content. X-ray absorption spectra exhibit increasing number of unoccupied 3d states and decreasing number of C 2p states as a function of carbon content. These changes signify a systematic redistribution in orbital occupation due to charge-transfer effects at the domain-size dependent carbide/matrix interfaces. Four-point probe resistivity of the Fe1-xCx films increases exponentially with carbon content from 200 mu-Ohm-cm (x=0.21) to 1200 mu-Ohm-cm (x=0.72), and is found to depend on the total carbon content rather than the composition of the carbide. Our findings open new possibilities for modifying the resistivity of amorphous thin film coatings based on transition metal carbides by control of amorphous domain structures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Crystallization characteristics and chemical bonding properties of nickel carbide thin film nanocomposites

The crystal structure and chemical bonding of magnetron-sputtering deposited nickel carbide Ni$_{1-x}$C$_{x}$ (0.05$\leq$x$\leq$0.62) thin films have been investigated by high-resolution X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and soft X-ray absorption spectroscopy. By using X-ray as well as electron diffraction, we found carbon-containing hcp-Ni (hcp-NiC$_{y}$ phase), instead of the expected rhombohedral-Ni$_{3}$C. At low carbon content (4.9 at\%) the thin film consists of hcp-NiC$_{y}$ nanocrystallites mixed with a smaller amount of fcc-NiC$_{x}$. The average grain size is about 10-20 nm. With the increase of carbon content to 16.3 at\%, the film contains single-phase hcp-NiC$_{y}$ nanocrystallites with expanded lattice parameters. With further increase of carbon content to 38 at\%, and 62 at\%, the films transform to X-ray amorphous materials with hcp-NiC$_{y}$ and fcc-NiC$_{x }$ nanodomain structures in an amorphous carbon-rich matrix. Raman spectra of carbon indicate dominant $sp^{2}$ hybridization, consistent with photoelectron spectra that show a decreasing amount of C-Ni phase with increasing carbon content. The Ni $3d$ - C $2p$ hybridization in the hexagonal structure gives rise to the salient double-peak structure in Ni $2p$ soft X-ray absorption spectra at 16.3 at\% that changes with carbon content. We also show that the resistivity is not only governed by the amount of carbon, but increases by more than a factor of two when the samples transform from crystalline to amorphous.

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preprint2013arXiv

A first principles study of the stability and mobility of defects in titanium carbide

We have performed density functional calculations of the formation energies of substitutional transition metal (TM) defects, C vacancies, and C interstitial defects in TiC. In addition we have evaluated the migration energy barriers for C atoms in the presence of TM impurities. We find that the solubility of TM impurities taken from the 3d TM series is low and only Sc and V impurities can be dissolved into TiC at equilibrium. In addition, we find that the migration energy barriers of C in TiC are greatly affected by the presence of TM impurities: The migration barriers are generally lower in the presence of impurities compared to pure TiC and show a clear dependence on the atomic size of the TM impurities. We propose that the mobility of C in TiC will be the highest in the presence of TM impurities from the middle of the 3d TM series.

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preprint2012arXiv

Electronic Structure and Chemical Bonding of Amorphous Chromium Carbide Thin Films

The microstructure, electronic structure, and chemical bonding of chromium carbide thin films with different carbon contents have been investigated with high-resolution transmission electron microscopy, electron energy loss spectroscopy and soft x-ray absorption-emission spectroscopies. Most of the films can be described as amorphous nanocomposites with non-crystalline CrCx in an amorphous carbon matrix. At high carbon contents, graphene-like structures are formed in the amorphous carbon matrix. At 47 at% carbon content, randomly oriented nanocrystallites are formed creating a complex microstructure of three components. The soft x-ray absorption-emission study shows additional peak structures exhibiting non-octahedral coordination and bonding.

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preprint2011arXiv

Anisotropy in the electronic structure of V2GeC investigated by soft x-ray emission spectroscopy and first-principles theory

The anisotropy of the electronic structure of ternary nanolaminate V2GeC is investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured polarization-dependent emission spectra of V L2,3, C K, Ge M1 and Ge M2,3 in V2GeC are compared to those from monocarbide VC and pure Ge. The experimental emission spectra are interpreted with calculated spectra using ab initio density-functional theory including dipole transition matrix elements. Different types of covalent chemical bond regions are revealed; V 3d - C 2p bonding at -3.8 eV, Ge 4p - C 2p bonding at -6 eV and Ge 4p - C 2s interaction mediated via the V 3d orbitals at -11 eV below the Fermi level. We find that the anisotropic effects are high for the 4p valence states and the shallow 3d core levels of Ge, while relatively small anisotropy is detected for the V 3d states. The macroscopic properties of the V2GeC nanolaminate result from the chemical bonds with the anisotropic pattern as shown in this work.

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preprint2011arXiv

Carbon release by selective alloying of transition metal carbides

We have performed first principles density functional theory calculations on TiC alloyed on the Ti sublattice with 3d transition metals ranging from Sc to Zn. The theory is accompanied with experimental investigations, both as regards materials synthesis as well as characterization. Our results show that by dissolving a metal with a weak ability to form carbides, the stability of the alloy is lowered and a driving force for the release of carbon from the carbide is created. During thin film growth of a metal carbide this effect will favor the formation of a nanocomposite with carbide grains in a carbon matrix. The choice of alloying elements as well as their concentrations will affect the relative amount of carbon in the carbide and in the carbon matrix. This can be used to design the structure of nanocomposites and their physical and chemical properties. One example of applications is as low-friction coatings. Of the materials studied, we suggest the late 3d transition metals as the most promising elements for this phenomenon, at least when alloying with TiC.

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preprint2011arXiv

Electronic structure and chemical bonding of nc-TiC/a-C nanocomposites

The electronic structure of nanocrystalline (nc-) TiC/amorphous C nanocomposites has been investigated by soft x-ray absorption and emission spectroscopy. The measured spectra at the Ti 2p and C 1s thresholds of the nanocomposites are compared to those of Ti metal and amorphous C. The corresponding intensities of the electronic states for the valence and conduction bands in the nanocomposites are shown to strongly depend on the TiC carbide grain size. An increased charge-transfer between the Ti 3d-eg states and the C 2p states has been identified as the grain size decreases, causing an increased ionicity of the TiC nanocrystallites. It is suggested that the charge-transfer occurs at the interface between the nanocrystalline TiC and the amorphous C matrix and represents an interface bonding which may be essential for the understanding of the properties of nc-TiC/amorphous C and similar nanocomposites.

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preprint2009arXiv

A novel wear-resistant magnetic thin film material based on a $Ti_{1-x}Fe_xC_{1-y}$ nanocomposite alloy

In this study we report on the film growth and characterization of thin (approximately 50 nm thick) Ti-Fe-C films deposited on amorphous quartz. The experimental studies have been complemented by first principles density functional theory (DFT) calculations. Upon annealing of as-prepared films, the composition of the metastable Ti-Fe-C film changes. An iron-rich phase is first formed close to the film surface, but with increasing annealing time this phase is gradually displaced toward the film-substrate interface where its position stabilizes. Both the magnetic ordering temperature and the saturation magnetization changes significantly upon annealing. The DFT calculations show that the critical temperature and the magnetic moment both increase with increasing Fe and C-vacancy concentration. The formation of the metastable iron-rich Ti-Fe-C compound is reflected in the strong increase of the magnetic ordering temperature. Eventually, after enough annealing time ($\geq 10$ minutes), nano-crystalline $α$-Fe starts to precipitate and the amount and size of these precipitates can be controlled by the annealing procedure; after 20 minutes of annealing, the experimental results indicate a nano-crystalline iron-film embedded in a wear resistant TiC compound. This conclusion is further supported by transmission electron microscopy studies on epitaxial Ti-Fe-C films deposited on single crystalline MgO substrates where, upon annealing, an iron film embedded in TiC is formed. Our results suggest that annealing of metastable Ti-Fe-C films can be used as an efficient way of creating a wear-resistant magnetic thin film material.

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preprint2009arXiv

Conductivity engineering of graphene by defect formation

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, by more than one order of magnitude. We obtain a pronounced enhancement of the conductivity after insertion of defects by both quantum mechanical transport calculations as well as experimental studies of carbon nano-sheets. Our finding is attributed to the defect induced mid-gap states, which create a region exhibiting metallic behavior around the vacancy defects. The modification of the conductivity of graphene by the implementation of stable defects is crucial for the creation of electronic junctions in graphene-based electronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Molecular adsorption in graphene with divacancy defects

We have investigated theoretically the adsorption of molecules onto graphene with divacancy defects. Using ab-initio density functional calculations, we have found that O2, CO, N2, B2 and H2O molecules all interact strongly with a divacancy in a graphene layer. Along with a complex geometry of the molecule-graphene bonding, metallic behavior of the graphene layer in presence of CO and N2 molecules have been found with a large density of states in the vicinity of the Fermi level suggesting an increase in the conductivity. The adsorption of N2 is particularly interesting since the N atoms dissociate in the vicinity of the defects, and take the place where the missing C atoms of the divacancy used to sit. In this way, the defected graphene structure is healed geometrically, and at the same time doped with electron states.

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