Researcher profile

U. Kaiser

U. Kaiser contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2021arXiv

A superlattice approach to doping infinite-layer nickelates

The recent observation of superconductivity in infinite-layer Nd$_{1-x}$Sr$_x$NiO$_2$ thin films has attracted a lot of attention, since this compound is electronically and structurally analogous to the superconducting cuprates. Due to the challenges in the phase stabilization upon chemical doping with Sr, we synthesized artificial superlattices of LaNiO$_3$ embedded in insulating LaGaO$_3$, and used layer-selective topotactic reactions to reduce the nickelate layers to LaNiO$_{2}$. Hole doping is achieved via interfacial oxygen atoms and tuned via the layer thickness. We used electrical transport measurements, transmission electron microscopy, and x-ray spectroscopy together with ab initio calculations to track changes in the local nickel electronic configuration upon reduction and found that these changes are reversible. Our experimental and theoretical data indicate that the doped holes are trapped at the interfacial quadratic pyramidal Ni sites. Calculations for electron-doped cases predict a different behavior, with evenly distributed electrons among the layers, thus opening up interesting perspectives for interfacial doping of transition metal oxides.

preprint2020arXiv

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (wavelength = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we unambiguously show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large amount of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis towards the defect-based engineering of the electronic and optical properties of TMDs for device applications.