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U. Ganguly

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cond-mat.mtrl-sci eess.SY physics.app-ph Systems and Control

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preprint2019arXiv

Temperature Dependence of Volatile Current shoot-up in PrMnO3 based Selector-less RRAM

PrMnO3 (PMO) based Resistance Random Access Memory (RRAM) has recently been considered for selector-less RRAM and neuromorphic computing applications by utilizing its current shoot-up. This current shoot-up in the PMO device is attributed to the thermal runaway in the device. Hence, the understanding of the ambient temperature dependence on the current shoot-up of the PMO device is essential for the various applications that utilize the negative differential resistance (NDR). In this paper, we characterize the ambient thermal dependence of dc IV, accompanied by the development of analytical modeling. First, the temperature-dependent current-voltage characteristic and shift in the threshold voltage of the PMO device are shown experimentally. Second, a Joule heating based thermal feedback model coupled with current transport by space charge limited current (SCLC) is developed to explain the experimentally observed NDR region. Finally, the model successfully predicts device behavior over a range of experimental ambient temperatures. As an alternative to TCAD, such a compact and accurate dc model sets up a platform to enable understanding, design with device and systems-level simulations of memory and neuromorphic applications.

preprint2016arXiv

Space Charge Limited Current with Self-heating in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ based RRAM

Space Charge Limited Current (SCLC) based conduction has been identified for PCMO-based RRAM devices based on the observation that $I \propto V^α$ where $α\approx 2$. A critical feature of the IV characteristics is a sharp rise in current ($α\gg 2$) which has been widely attributed to trap-filled limit (TFL) followed by an apparent trap-free SCLC conduction. In this paper, we show by TCAD analysis that trap-filled limit (TFL) is insufficient to explain the sharp current rise ($α\gg 2$). As an alternative, we propose a shallow trap SCLC model with selfheating effect based thermal runaway to explain the sharp current rise followed by a series resistance dominated regime. Experimental results over a range of 25°C-125°C demonstrate all 4 regimes (i) Ohmic ($α= 1$), (ii) shallow trap SCLC ($α\approx 2$), (iii) current shoot up ($α\gg 2$) and (iv) series resistance ($α= 1$). Further, TCAD simulations with thermal modeling are able to match the experimental IV characteristics in all the regimes. Thus, a current conduction mechanism in PCMO-based RRAM supported by detailed TCAD model is presented. Such a model is essential for further quantitative understanding and design for PCMO-based RRAM.