Space Charge Limited Current with Self-heating in PrCaMnO based RRAM
Space Charge Limited Current (SCLC) based conduction has been identified for PCMO-based RRAM devices based on the observation that where . A critical feature of the IV characteristics is a sharp rise in current () which has been widely attributed to trap-filled limit (TFL) followed by an apparent trap-free SCLC conduction. In this paper, we show by TCAD analysis that trap-filled limit (TFL) is insufficient to explain the sharp current rise (). As an alternative, we propose a shallow trap SCLC model with selfheating effect based thermal runaway to explain the sharp current rise followed by a series resistance dominated regime. Experimental results over a range of 25°C-125°C demonstrate all 4 regimes (i) Ohmic (), (ii) shallow trap SCLC (), (iii) current shoot up () and (iv) series resistance (). Further, TCAD simulations with thermal modeling are able to match the experimental IV characteristics in all the regimes. Thus, a current conduction mechanism in PCMO-based RRAM supported by detailed TCAD model is presented. Such a model is essential for further quantitative understanding and design for PCMO-based RRAM.