Source author record

U. Dersch

U. Dersch appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2015arXiv

The transverse momentum dependence of charged kaon Bose-Einstein correlations in the SELEX experiment

We report on the measurement of the one-dimensional charged kaon correlation functions using 600~GeV/{\it c} $Σ^-$, $π^-$ and 540~GeV/{\it c} $p$ beams from the SELEX~(E781) experiment at the Fermilab Tevatron. $K^{\pm}K^{\pm}$ correlation functions are studied for three transverse pair momentum, $k_T$, ranges and parameterized by a Gaussian form. The emission source radii, $R$, and the correlation strength, $λ$, are extracted. The analysis shows a decrease of the source radii with increasing kaon transverse pair momentum for all beam types.

preprint2010arXiv

Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis

Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In our previous work we demonstrated that the Finite Element Method (FEM) is very well suited for the simulation of EUV scatterometry and can be used to reconstruct EUV mask profiles from experimental scatterometric data. In this contribution we apply an indirect metrology method to periodic EUV line masks with different critical dimensions (140 nm and 540 nm) over a large range of duty cycles (1:2, ..., 1:20). We quantitatively compare the reconstructed absorber pattern parameters to values obtained from direct AFM and CD-SEM measurements. We analyze the reliability of the reconstruction for the given experimental data. For the CD of the absorber lines, the comparison shows agreement of the order of 1nm. Furthermore we discuss special numerical techniques like domain decomposition algorithms and high order finite elements and their importance for fast and accurate solution of the inverse problem.