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Tzveta Apostolova

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physics.optics cond-mat.mes-hall physics.atom-ph

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preprint2023arXiv

Tunable in situ Near-UV Pulses by Transient Plasmonic Resonance in Nanocomposites

We propose a new concept for generation of ultrashort pulses based on transient plasmonic resonance in nanoparticle composites. Photoionization and free-carriers plasma change the susceptibility of nanoparticles on a few-femtosecond scale. This results in a narrow time window during the pump pulse duration when the system is in plasmonic resonance, accompanied by a short burst of the local field. During this process, frequency-tunable few-fs pulses are generated. We elucidate the details of the above mechanism, and investigate the influences of different contributing processes.

preprint2020arXiv

Blueshift of high-order harmonic generation in crystalline silicon subjected to intense femtosecond near-infrared laser pulse

We present the generation of high order harmonics in crystalline silicon subjected to intense near-infrared 30fs laser pulse. The harmonic spectrum extends from the near infrared to the extreme ultraviolet spectral region. Depending on the pulsed laser intensity, we distinguish two regimes of harmonic generation: (i) perturbative regime: electron-hole pairs born during each half-cycle of the laser pulse via multiphoton and tunnel transitions are accelerated in the laser electric field and gain kinetic energy; the electron-hole pairs then recombine in the ground state by emitting a single high-energy photon. The resultant high harmonic spectrum consists of sharp peaks at odd harmonic orders. (ii) non-perturbative regime: the intensity of the harmonics increases, their spectral width broadens and the position of harmonics shifts to shorter wavelengths. The blueshift of high harmonics in silicon are independent on the harmonic order which may be helpful in the design of continuously tunable XUV sources.

preprint2020arXiv

Ultrafast energy absorption and photoexcitation of bulk plasmon in crystalline silicon subjected to intense near-infrared ultrashort laser pulses

We investigate the non-linear response and energy absorption in bulk silicon irradiated by intense 12-fs near-infrared laser pulses. Depending on the laser intensity, we distinguish two regimes of non-linear absorption of the laser energy: for low intensities, energy deposition and photoionization involve perturbative three-photon transition through the direct bandgap of silicon. For laser intensities near and above 10 $^{14}$ W/cm $^2$ , corresponding to photocarrier density of order 10 $^{22}$ cm $^{-3}$ , we find that absorption at near-infrared wavelengths is greatly enhanced due to excitation of bulk plasmon resonance. In this regime, the energy transfer to electrons exceeds a few times the thermal melting threshold of Si. The optical reflectivity of the photoexcited solid is found in good qualitative agreement with existing experimental data. In particular, the model predicts that the main features of the reflectivity curve of photoexcited Si as a function of the laser fluence are determined by the competition between state and band filling associated with Pauli exclusion principle and Drude free-carrier response. The non-linear response of the photoexcited solid is also investigated for irradiation of silicon with a sequence of two strong and temporary non-overlapping pulses. The cumulative effect of the two pulses is non-additive in terms of deposited energy. Photoionization and energy absorption on the leading edge of the second pulse is greatly enhanced due to free carrier absorption.

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