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Tsung-Han Lee

Tsung-Han Lee contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Bypassing the computational bottleneck of quantum-embedding theories for strong electron correlations with machine learning

A cardinal obstacle to performing quantum-mechanical simulations of strongly-correlated matter is that, with the theoretical tools presently available, sufficiently-accurate computations are often too expensive to be ever feasible. Here we design a computational framework combining quantum-embedding (QE) methods with machine learning. This allows us to bypass altogether the most computationally-expensive components of QE algorithms, making their overall cost comparable to bare Density Functional Theory (DFT). We perform benchmark calculations of a series of actinide systems, where our method describes accurately the correlation effects, reducing by orders of magnitude the computational cost. We argue that, by producing a larger-scale set of training data, it will be possible to apply our method to systems with arbitrary stoichiometries and crystal structures, paving the way to virtually infinite applications in condensed matter physics, chemistry and materials science.

preprint2020arXiv

Hybridization effect on the X-ray absorption spectra for actinide materials: Application to PuB$_4$

Studying the local moment and 5$f$-electron occupations sheds insight into the electronic behavior in actinide materials. X-ray absorption spectroscopy (XAS) has been a powerful tool to reveal the valence electronic structure when assisted with theoretical calculations. However, the analysis currently taken in the community on the branching ratio of the XAS spectra generally does not account for the hybridization effects between local $f$-orbitals and conduction states. In this paper, we discuss an approach which employs the DFT+Gutzwiller rotationally-invariant slave boson (DFT+GRISB) method to obtain a local Hamiltonian for the single-impurity Anderson model (SIAM), and calculates the XAS spectra by the exact diagonalization (ED) method. A customized numerical routine was implemented for the ED XAS part of the calculation. By applying this technique to the recently discovered 5$f$-electron topological Kondo insulator PuB$_4$, we determined the signature of 5$f$-electronic correlation effects in the theoretical X-ray spectra. We found that the Pu 5$f$-6$d$ hybridization effect provides an extra channel to mix the $j=5/2$ and $7/2$ orbitals in the 5$f$ valence. As a consequence, the resulting electron occupation number and spin-orbit coupling strength deviate from the intermediate coupling regime.

preprint2020arXiv

The two-dimensional disordered Mott metal-insulator transition

We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through the Statistical Dynamical Mean-Field Theory (statDMFT). This theory is a natural extension of the Dynamical Mean-Field Theory (DMFT), which has been used with relative success in the last several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, the statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using Quantum Monte Carlo to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator cease to be meta-stable. We also studied spatial fluctuations of local quantities, such as the self-energy and the local Green's function, and showed the appearance of metallic regions within the insulator and vice-versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma, the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a mapping to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.