Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations
We determined the interface state density () distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage characteristics of MOS field effect transistors (MOSFETs) with numerical calculations. In the calculation, potential distributions and energy sub-bands in the inversion layer were calculated by solving Poisson and Schrödinger equations, respectively. We demonstrate that gate characteristics of the MOSFETs are well described by considering that the interface states are caused by fluctuation of free-electron density of states in a two-dimensional system. The distributions are almost uniquely determined by the oxide formation process (as oxidation or interface nitridation) and independent of the acceptor concentration ().