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Mitsuru Sometani

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ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.other

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2 publications

preprint2017arXiv

Characterization of Traps at Nitrided SiO2_2/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

The effects of nitridation on the density of traps at SiO2_2/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge by nitridation, as well as the high density of interface traps that was not eliminated by nitridation.

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preprint2014arXiv

Characterization of Interface Traps in SiO2_2/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the low-mobility interfaces oxidized in a N2_2O atmosphere with those of the high-mobility interfaces on C-face oxidized in a wet atmosphere, it was found that a high density of traps are commonly observed around the energy of 0.16 eV from the edge of the conduction band (C1C1 traps) in low-mobility interfaces irrespective of crystal faces. It was also found that the generation and elimination of traps specific to crystal faces: (1) the C1C1 traps can be eliminated by wet oxidation only on the C-face, and (2) the O2O2 traps (0.37 eV) can be observed in the SiC/SiO2_2 interface only on the Si-face. The generation of O2O2 traps on the Si-face and the elimination of C1C1 traps on the C-face by wet oxidation may be caused by the oxidation reaction specific to the crystal faces.

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