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Mitsuru Sometani

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cond-mat.mtrl-sci cond-mat.other

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preprint2017arXiv

Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge by nitridation, as well as the high density of interface traps that was not eliminated by nitridation.

preprint2014arXiv

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the low-mobility interfaces oxidized in a N$_2$O atmosphere with those of the high-mobility interfaces on C-face oxidized in a wet atmosphere, it was found that a high density of traps are commonly observed around the energy of 0.16 eV from the edge of the conduction band ($C1$ traps) in low-mobility interfaces irrespective of crystal faces. It was also found that the generation and elimination of traps specific to crystal faces: (1) the $C1$ traps can be eliminated by wet oxidation only on the C-face, and (2) the $O2$ traps (0.37 eV) can be observed in the SiC/SiO$_2$ interface only on the Si-face. The generation of $O2$ traps on the Si-face and the elimination of $C1$ traps on the C-face by wet oxidation may be caused by the oxidation reaction specific to the crystal faces.