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Researcher profile

Travis Dirks

Travis Dirks contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.supr-con

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Published work

3 published item(s)

preprint2010arXiv

Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity

We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL), universal conductance fluctuations (UCF), and inhomogeneous charge transport. A clear WL signal is evident at all measured gate voltages (in the hole doped regime) and temperature ranges (from 0.25 K to 4.3 K), and the phase coherence length extracted from WL data does not saturate at low temperatures. The WL data is fit to demonstrate that electron-electron Nyquist scattering is the major source of phase decoherence. A decrease in UCF amplitude with increasing gate voltage and temperature is shown to be consistent with a corresponding decrease in the phase coherence length. In addition, a weak positive magnetoresistance at higher magnetic fields is observed, and attributed to inhomogeneous charge transport.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Non-equilibrium Tunneling Spectroscopy in Carbon Nanotubes

We report measurements of the non-equilibrium electron energy distribution in carbon nanotubes. Using tunneling spectroscopy via a superconducting probe, we study the shape of the local electron distribution functions, and hence energy relaxation rates, in nanotubes that have bias voltages applied between their ends. At low temperatures, electrons interact weakly in nanotubes of a few microns channel length, independent of end-to-end conductance values. Surprisingly, the energy relaxation rate can increase substantially when the temperature is raised to only 1.5 K.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transport Through Andreev Bound States in a Graphene Quantum Dot

Andreev reflection-where an electron in a normal metal backscatters off a superconductor into a hole-forms the basis of low energy transport through superconducting junctions. Andreev reflection in confined regions gives rise to discrete Andreev bound states (ABS), which can carry a supercurrent and have recently been proposed as the basis of qubits [1-3]. Although signatures of Andreev reflection and bound states in conductance have been widely reported [4], it has been difficult to directly probe individual ABS. Here, we report transport measurements of sharp, gate-tunable ABS formed in a superconductor-quantum dot (QD)-normal system, which incorporates graphene. The QD exists in the graphene under the superconducting contact, due to a work-function mismatch [5, 6]. The ABS form when the discrete QD levels are proximity coupled to the superconducting contact. Due to the low density of states of graphene and the sensitivity of the QD levels to an applied gate voltage, the ABS spectra are narrow, can be tuned to zero energy via gate voltage, and show a striking pattern in transport measurements.

0 citations0 reviewsNo code linkedOpen access