BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Toshihito Osada

Toshihito Osada contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2022arXiv

Thermoelectric Hall Effect at High-Magnetic-Field Quantum Limit in Graphite as a Nodal-Line Semimetal

The high-magnetic-field thermoelectric effect in nodal-line semimetals with straight nodal lines was investigated. Three-dimensional (3D) Dirac/Weyl semimetals exhibit constant thermoelectric Hall conductivity at the high-magnetic-field quantum limit, resulting in a boundless linear increase of Seebeck coefficient. This is known as the quantized thermoelectric Hall effect (QTHE), and is expected to lead to high-performance thermoelectricity at low temperatures. Here, in addition to Dirac/Weyl semimetals, we demonstrated that 3D semimetals with straight nodal lines can also exhibit the QTHE under high magnetic fields. As a candidate material for experimental validation, we discussed the thermoelectric properties of bulk graphite. Furthermore, we investigated the dimensional crossover of thermoelectricity to two-dimensional behavior in thin-film graphite.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3

The electronic structure of weak charge-ordering (CO) state just below the critical pressure in an organic conductor α-(BEDT-TTF)_2I_3 was experimentally investigated using peak structure in the temperature dependence of interlayer magnetoresistance (MR). Based on a minimal model considering multiple Landau levels (LLs), we discuss herein the MR peak as characteristic to multilayer massless/massive Dirac fermion (DF) systems. MR measured in the weak CO state exhibited a clear MR peak, and its magnetic-field dependence was consistent with the LL behavior of a massive DF with a small gap. Results indicate that the weak CO state in α-(BEDT-TTF)_2I_3 is a massive DF state.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electronic Structure and the Properties of Phosphorene Systems

A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014. It has a puckered honeycomb lattice structure and a semiconducting electronic structure. In the first part of this paper, we use a simple LCAO model, and discuss qualitatively the electronic structure of phosphorene systems under electric and magnetic fields, especially, noting their midgap edge states. The next part is spent for the review of the research progress on phosphorene in the past one year since its appearance in 2014. Phosphorene has been a typical object to study the semiconductor physics in atomic layers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System

We discuss the surface magnetotransport in the quantum Hall (QH) ferromagnetic state expected in the organic Dirac fermion system α-(BEDT-TTF)_2I_3. The QH ferromagnetic state is one of the possible ν=0 QH states in the two-dimensional Dirac fermion system resulting from the degeneracy breaking of the n=0 Landau level. It is characterized by the helical edge state. We have studied the interlayer surface transport via helical edge state in the multilayer QH ferromagnet, in which the bulk region is insulating. We have clarified that the surface conductivity is much less than e^2/h and decreases as the magnetic field is tilted to the normal direction of the side surface. These features explain the observed interlayer magnetoresistance in α-(BEDT-TTF)_2I_3.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Edge State and Intrinsic Hole Doping in Bilayer Phosphorene

Using a simple LCAO model by Harrison, we have qualitatively studied the edge state of bilayer phosphorene, which is a unit structure of the layered crystal of black phosphorus. This model successfully reproduces the isolated edge state in the bulk gap in monolayer phosphorene. In bilayer phosphorene, however, it shows that edge states are almost buried in the valence band and there is no isolated midgap edge state at the zigzag edge. Since the buried edge state works as acceptor, holes are doped from the edge state into the bulk. This gives a possible explanation for p-type conduction in undoped black phosphorus. Under the vertical electric field, the intrinsic hole doping is reduced because a part of edge states move into the gap. These features of bilayer phosphorene might be better suited for device application.

0 citations0 reviewsNo code linkedOpen access