Researcher profile

Tony G. Ivanov

Tony G. Ivanov contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Towards a temperature-insensitive composite diamond clock

Frequency references based on solid state spins promise simplicity, compactness, robustness, multifunctionality, ease of integration, and high densities of emitters. Nitrogen-vacancy (NV) centers in diamond are a natural candidate, but the electronic zero-field splitting exhibits a large fractional temperature dependence, which has precluded its use as a stable clock transition. Here we show that this limitation can be overcome by forming a composite frequency reference that combines measurements of the electronic splitting D with the nuclear quadrupole splitting of the $^{14}$N nuclear spin intrinsic to the NV center. We further benchmark this composite approach against alternative strategies for mitigating temperature sensitivity. By implementing a specially designed pulse sequence with an eight-phase control scheme that suppresses pulse imperfections, we interleave measurements of D and Q in a high-density NV ensemble and demonstrate a temperature-compensated composite frequency reference. The stability of this composite diamond clock is characterized over a 10-day period at room temperature through a comparison to a Rb vapor-cell clock, yielding a fractional instability below $5 \times 10^{-9}$ for an averaging time of $τ= 200$ s and below $1 \times 10^{-8}$ at $τ= 2 \times 10^5$ s, corresponding to measured improvements by a factor of 4 and 200, respectively, over a clock based purely on the single frequency D for the same periods. By characterizing the residual sensitivity to magnetic fields, optical power, and radio-frequency drive amplitudes, we find that temperature is no longer the dominant source of instability. These results establish complementary electron- and nuclear-spin transitions in diamond as a viable route to thermally robust frequency metrology, providing a pathway toward compact, multifunctional solid-state clocks and quantum sensors.

preprint2021arXiv

A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces

Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113) and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface hydrogenation in these surfaces is hard to achieve because of the steric repulsion between the terminated hydrogen atoms. Among all the considered surfaces, the (001), (110), and (113) surfaces incorporate a larger number of hydrogen atoms and passivate the surface dangling bonds. Our results on hydrogen stability also suggest that these surfaces with optimum hydrogen coverage are robust under extreme conditions and could provide homogeneous p-type surface conductivity in the diamond surfaces, a key requirement for high-field, high-frequency device applications.