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Researcher profile

Tonica Valla

Tonica Valla contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.othercond-mat.supr-conquant-ph

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Published work

5 published item(s)

preprint2022arXiv

Topological electronic structure of YbMg$_2$Bi$_2$ and CaMg$_2$Bi$_2$

Zintl compounds have been extensively studied for their outstanding thermoelectric properties, but their electronic structure remains largely unexplored. Here, we present a detailed investigation of the electronic structure of the isostructural thermopower materials YbMg$_2$Bi$_2$ and CaMg$_2$Bi$_2$ using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). The ARPES results show a significantly smaller Fermi surface and Fermi velocity in CaMg$_2$Bi$_2$ than in YbMg$_2$Bi$_2$. Our ARPES results also reveal that in the case of YbMg$_2$Bi$_2$, Yb-4$f$ states reside well below the Fermi level and likely have a negligible impact on transport properties. To properly model the position of 4$f$-states, as well as the overall electronic structure, a Hubbard $U$ at the Yb sites and spin-orbit coupling (SOC) have to be included in the DFT calculations. Interestingly, the theoretical results reveal that both materials belong to a $Z_2$ topological class and host robust topological surface states around $E_\mathrm {F}$. Due to the intrinsic hole doping, the topological states reside above the Fermi level, inaccessible by ARPES. Our results also suggest that in addition to SOC, vacancies and the resulting hole doping play an important role in the transport properties of these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Homogeneous superconducting gap in DBCO synthesized by oxide molecular beam epitaxy

Much of what is known about high-temperature cuprate superconductors stems from studies based on two surface analytical tools, angle-resolved photoemission spectroscopy (ARPES) and spectroscopic imaging scanning tunneling microscopy (SI-STM). A question of general interest is whether and when the surface properties probed by ARPES and SI-STM are representative of the intrinsic properties of bulk materials. We find this question is prominent in thin films of a rarely studied cuprate DBCO. We synthesize DBCO films by oxide molecular beam epitaxy and study them by in situ ARPES and SI-STM. Both ARPES and SI-STM show that the surface DBCO layer is different from the bulk of the film. It is heavily underdoped, while the doping level in the bulk is close to optimal doping evidenced by bulk-sensitive mutual inductance measurements. ARPES shows the typical electronic structure of a heavily underdoped CuO2 plane and two sets of one-dimensional bands originating from the CuO chains with one of them gapped. SI-STM reveals two different energy scales in the local density of states, with one corresponding to the superconductivity and the other one to the pseudogap. While the pseudogap shows large variations over the length scale of a few nanometers, the superconducting gap is very homogeneous. This indicates that the pseudogap and superconductivity are of different origins.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum size effects, multiple Dirac cones and edge states in ultrathin Bi(110) films

The presence of inherently strong spin-orbit coupling in bismuth, its unique layer-dependent band topology and high carrier mobility make it an interesting system for both fundamental studies and applications. Theoretically, it has been suggested that strong quantum size effects should be present in the Bi(110) films, with the possibility of Dirac fermion states in the odd-bilayer (BL) films, originating from dangling $p_z$ orbitals and quantum-spin hall (QSH) states in the even-bilayer films. However, the experimental verification of these claims has been lacking. Here, we study the electronic structure of Bi(110) films grown on a high-$T_c$ superconductor, Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212) using angle-resolved photoemission spectroscopy (ARPES). We observe an oscillatory behavior of electronic structure with the film thickness and identify the Dirac-states in the odd-bilayer films, consistent with the theoretical predictions. In the even-bilayer films, we find another Dirac state that was predicted to play a crucial role in the QSH effect. In the low thickness limit, we observe several extremely one-dimensional states, probably originating from the edge-states of Bi(110) islands. Our results provide a much needed experimental insight into the electronic and structural properties of Bi(110) films.

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preprint2020arXiv

Absence of a Dirac gap in ferromagnetic Cr$_x$(Bi$_{0.1}$Sb$_{0.9}$)$_{2-x}$Te$_3$

Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic 3$d$ elements into bulk of 3D topological insulators. In Cr$_{0.15}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.85}$Te$_3$, the material where the quantum anomalous Hall effect was initially discovered at temperatures much lower than the ferromagnetic transition, $T_C$, the scanning tunneling microscopy studies have reported a large Dirac gap $\sim20-100$ meV. The discrepancy between the low temperature of quantum anomalous Hall effect ($\ll T_C$) and large spectroscopic Dirac gaps ($\gg T_C$) found in magnetic topological insulators remains puzzling. Here, we used angle-resolved photoemission spectroscopy to study the surface electronic structure of pristine and potassium doped surface of Cr$_{0.15}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.85}$Te$_3$. Upon potassium deposition, the $p$-type surface state of pristine sample was turned into an $n$-type, allowing spectroscopic observation of Dirac point. We find a gapless surface state, with no evidence of a large Dirac gap reported in tunneling studies.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Dirac energy spectrum and inverted band gap in metamorphic InAsSb/InSb superlattices

A Dirac-type energy spectrum was demonstrated in gapless ultra-short-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES_ measurements. The Fermi velocity value 7.4x10^5 m/s in a gapless superlattice with a period of 6.2nm is in a good agreement with the results of magneto-absorption experiments. An "inverted" bandgap opens in the center of the Brillouin zone at higher temperatures and in the SL with a larger period. The ARPES data indicate the presence of a surface electron accumulation layer

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