Researcher profile

Tomoaki Nishino

Tomoaki Nishino contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

Site selection in single-molecule junction for highly reproducible molecular electronics

Adsorption sites of molecules critically determine the electric/photonic properties and its stability of heterogeneous molecule-metal interfaces. Then, selectivity of adsorption site is essential for development of the fields including organic electronics, catalysis, and biology. However, due to current technical limitations, site-selectivity remains a major challenge because of difficulty in precise selection of meaningful one among the sites. Here, we report the single site-selection at a single-molecule junction by performing newly developed hybrid technique: simultaneous characterization of surface enhanced Raman scattering (SERS) and current-voltage (I-V) measurements. The I-V response of 1,4-benzenedithiol junctions, reveals the existence of three meta-stable states arising from different adsorption sites. Notably, correlated SERS measurements show selectivity towards one of the adsorption sites, bridge sites. This site-selectivity represents an essential step towards the reliable integration of individual molecules on metallic surfaces. Furthermore, the hybrid spectro-electric technique reveals the dependence of the SERS intensity on the strength of the molecule-metal interaction, showing the interdependence between the optical and electronic properties in single-molecule junctions.

preprint2014arXiv

Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through the interfaces is observed, such as a reversible polarity reversion of metal/organic-semiconductor/metal diodes.