Researcher profile

Tommy Li

Tommy Li contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Higher-order topological superconductivity from repulsive interactions in kagome and honeycomb systems

We discuss a pairing mechanism in interacting two-dimensional multipartite lattices that intrinsically leads to a second order topological superconducting state with a spatially modulated gap. When the chemical potential is close to Dirac points, oppositely moving electrons on the Fermi surface undergo an interference phenomenon in which the Berry phase converts a repulsive electron-electron interaction into an effective attraction. The topology of the superconducting phase manifests as gapped edge modes in the quasiparticle spectrum and Majorana Kramers pairs at the corners. We present symmetry arguments which constrain the possible form of the electron-electron interactions in these systems and classify the possible superconducting phases which result. Exact diagonalization of the Bogoliubov-de Gennes Hamiltonian confirms the existence of gapped edge states and Majorana corner states, which strongly depend on the spatial structure of the gap. Possible applications to vanadium-based superconducting kagome metals AV$_3$Sb$_3$ (A=K,Rb,Cs) are discussed.

preprint2022arXiv

Intrinsic first and higher-order topological superconductivity in a doped topological insulator

We explore higher order topological superconductivity in an artificial Dirac material with intrinsic spin-orbit coupling, which is a doped $\mathbb{Z}_2$ topological insulator in the normal state. A mechanism for superconductivity due to repulsive interactions -- $\mathit{pseudospin}$ $\mathit{pairing}$ -- has recently been shown to naturally result in higher-order topology in Dirac systems past a minimum chemical potential \cite{Li2021}. Here we apply this theory through microscopic modeling of a superlattice potential imposed on an inversion symmetric hole-doped semiconductor heterostructure, known as hole-based semiconductor artificial graphene, and extend previous work to include the effects of spin-orbit coupling. We find that spin-orbit coupling enhances interaction effects, providing an experimental handle to increase the efficiency of the superconducting mechanism. We show that the phase diagram of these systems, as a function of chemical potential and interaction strength, contains three superconducting states -- a first-order topological $p+ip$ state, a second-order topological spatially modulated $p+iτp$ state, and a second-order topological extended $s$-wave state, $s_τ$. We calculate the symmetry-based indicators for the $p+iτp$ and $s_τ$ states, which prove these states possess second-order topology. Exact diagonalisation results are presented which illustrate the interplay between the boundary physics and spin orbit interaction. We argue that this class of systems offer an experimental platform to engineer and explore first and higher-order topological superconducting states.

preprint2021arXiv

Nested Fermi surfaces and correlated electronic phases in hole-doped semiconductor quantum wells

We demonstrate the existence of novel interaction effects in hole-doped semiconductor quantum wells which are connected to dramatic changes in the Fermi surface geometry occurring upon variation of the doping. We present band structure calculations showing that quantum wells formed in $p$-type cubic semiconductors develop nested Fermi surfaces at a critical hole density set by the width $d$ of the quantum well $k_F\sim π/d$. Nesting gives rise to competing superconducting and charge or spin density wave order, which we analyze using the perturbative renormalization group method. The correlated phases may be created or destroyed by tuning the hole density towards or away from the critical density. Our results establish $p$-type semiconductor quantum wells as a platform for novel correlated phases, which may be precisely controlled using electrostatic gating and external magnetic fields.