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Tommy Li

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cond-mat.mes-hall cond-mat.supr-con cond-mat.str-el

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preprint2022arXiv

Higher-order topological superconductivity from repulsive interactions in kagome and honeycomb systems

We discuss a pairing mechanism in interacting two-dimensional multipartite lattices that intrinsically leads to a second order topological superconducting state with a spatially modulated gap. When the chemical potential is close to Dirac points, oppositely moving electrons on the Fermi surface undergo an interference phenomenon in which the Berry phase converts a repulsive electron-electron interaction into an effective attraction. The topology of the superconducting phase manifests as gapped edge modes in the quasiparticle spectrum and Majorana Kramers pairs at the corners. We present symmetry arguments which constrain the possible form of the electron-electron interactions in these systems and classify the possible superconducting phases which result. Exact diagonalization of the Bogoliubov-de Gennes Hamiltonian confirms the existence of gapped edge states and Majorana corner states, which strongly depend on the spatial structure of the gap. Possible applications to vanadium-based superconducting kagome metals AV$_3$Sb$_3$ (A=K,Rb,Cs) are discussed.

preprint2022arXiv

Intrinsic first and higher-order topological superconductivity in a doped topological insulator

We explore higher order topological superconductivity in an artificial Dirac material with intrinsic spin-orbit coupling, which is a doped $\mathbb{Z}_2$ topological insulator in the normal state. A mechanism for superconductivity due to repulsive interactions -- $\mathit{pseudospin}$ $\mathit{pairing}$ -- has recently been shown to naturally result in higher-order topology in Dirac systems past a minimum chemical potential \cite{Li2021}. Here we apply this theory through microscopic modeling of a superlattice potential imposed on an inversion symmetric hole-doped semiconductor heterostructure, known as hole-based semiconductor artificial graphene, and extend previous work to include the effects of spin-orbit coupling. We find that spin-orbit coupling enhances interaction effects, providing an experimental handle to increase the efficiency of the superconducting mechanism. We show that the phase diagram of these systems, as a function of chemical potential and interaction strength, contains three superconducting states -- a first-order topological $p+ip$ state, a second-order topological spatially modulated $p+iτp$ state, and a second-order topological extended $s$-wave state, $s_τ$. We calculate the symmetry-based indicators for the $p+iτp$ and $s_τ$ states, which prove these states possess second-order topology. Exact diagonalisation results are presented which illustrate the interplay between the boundary physics and spin orbit interaction. We argue that this class of systems offer an experimental platform to engineer and explore first and higher-order topological superconducting states.

preprint2021arXiv

Nested Fermi surfaces and correlated electronic phases in hole-doped semiconductor quantum wells

We demonstrate the existence of novel interaction effects in hole-doped semiconductor quantum wells which are connected to dramatic changes in the Fermi surface geometry occurring upon variation of the doping. We present band structure calculations showing that quantum wells formed in $p$-type cubic semiconductors develop nested Fermi surfaces at a critical hole density set by the width $d$ of the quantum well $k_F\sim π/d$. Nesting gives rise to competing superconducting and charge or spin density wave order, which we analyze using the perturbative renormalization group method. The correlated phases may be created or destroyed by tuning the hole density towards or away from the critical density. Our results establish $p$-type semiconductor quantum wells as a platform for novel correlated phases, which may be precisely controlled using electrostatic gating and external magnetic fields.

preprint2016arXiv

Chern insulating state in laterally patterned semiconductor heterostructures

Hexagonally patterned two-dimensional $p$-type semiconductor systems are quantum simulators of graphene with strong and highly tunable spin-orbit interactions. We show that application of purely in-plane magnetic fields, in combination with the crystallographic anisotropy present in low-symmetry semiconductor interfaces, allows Chern insulating phases to emerge from an originally topologically insulating state after a quantum phase transition. These phases are characterized by pairs of co-propagating edge modes and Hall conductivities $σ_{xy} = +\frac{2 e^2}{h}, -\frac{2 e^2}{h}$ in the absence of Landau levels or cyclotron motion. With current lithographic technology, the Chern insulating transitions are predicted to occur in GaAs heterostructures at magnetic fields of $\sim 5\text{T}$.

preprint2016arXiv

Semiclassical Landau quantization of spin-orbit coupled systems

A semiclassical quantization condition is derived for Landau levels in general spin-orbit coupled systems. This generalizes the Onsager quantization condition via a matrix-valued phase which describes spin dynamics along the classical cyclotron trajectory. We discuss measurement of the matrix phase via magnetic oscillations and electron spin resonance, which may be used to probe the spin structure of the precessing wavefunction. We compare the resulting semiclassical spectrum with exact results which are obtained for a variety of spin-orbit interactions in 2D systems.

preprint2015arXiv

Confinement of spin-orbit induced Dirac states in quantum point contacts

The quantum transmission problem for a particle moving in a quantum point contact in the presence of a Rashba spin-orbit interaction and applied magnetic field is solved semiclassically. A strong Rashba interaction and parallel magnetic field form emergent Dirac states at the center of the constriction, leading to the appearance of resonances which carry spin current and become bound at high magnetic fields. These states can be controlled in situ by modulation of external electric and magnetic fields, and can be used to turn the channel into a spin pump which operates at zero bias. It is shown that this effect is currently experimentally accessible in $p$-type quantum point contacts.