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Researcher profile

Tomas Jungwirth

Tomas Jungwirth contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

6 published item(s)

preprint2022arXiv

Emerging research landscape of altermagnetism

Magnetism is one of the largest, most fundamental, and technologically most relevant fields of condensed-matter physics. Traditionally, two basic magnetic phases have been considered -- ferromagnetism and antiferromagnetism. The breaking of the time-reversal symmetry and spin splitting of the electronic states by the magnetization in ferromagnets underpins a range of macroscopic responses in this extensively explored and exploited type of magnets. By comparison, antiferromagnets have vanishing net magnetization. This Perspective reflects on recent observations of materials hosting an intriguing ferromagnetic-antiferromagnetic dichotomy, in which spin-split spectra and macroscopic observables, akin to ferromagnets, are accompanied by antiparallel magnetic order with vanishing magnetization, typical of antiferromagnets. An unconventional non-relativistic symmetry-group formalism offers a resolution of this apparent contradiction by delimiting a third basic magnetic phase, dubbed altermagnetism. Our Perspective starts with an overview of the still emerging unique phenomenology of the phase, and of the wide array of altermagnetic material candidates. In the main part of the article, we illustrate how altermagnetism can enrich our understanding of overarching condensed-matter physics concepts, and have impact on prominent condensed-matter research areas.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Defect-driven antiferromagnetic domain walls in CuMnAs films

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Frequency-independent terahertz anomalous Hall effect in DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$ thin films from DC to 40 THz

The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on such conversion effects at terahertz (THz) frequencies. Here, we reveal that the AHE remains operative from DC up to 40 THz with a flat frequency response in thin films of three technologically relevant magnetic materials: DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$. We measure the frequency-dependent conductivity-tensor elements $σ_{xx}$ and $σ_{yx}$ and find good agreement with DC measurements. Our experimental findings are fully consistent with ab-initio calculations of $σ_{yx}$ for CoFe and highlight the role of the large Drude scattering rate (~100 THz) of metal thin films, which smears out any sharp spectral features of the THz AHE. Finally, we find that the intrinsic contribution to the THz AHE dominates over the extrinsic mechanisms for the Co$_{32}$Fe$_{68}$ sample. The results imply that the AHE and related effects such as the spin Hall effect are highly promising ingredients of future THz spintronic devices reliably operating from DC to 40 THz and beyond.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Investigation of Optical Spin Transfer Torque in Ferromagnetic Semiconductor GaMnAs by Magneto-Optical Pump-and-Probe Method

We report on magnetization precession induced in (Ga,Mn)As by an optical spin transfer torque (OSTT). This phenomenon, which corresponds to a transfer of angular momentum from optically-injected spin-polarized electrons to magnetization, was predicted theoretically in 2004 and observed experimentally by our group in 2012. In this paper we provide experimental details about the observation of OSTT by a time-resolved pump-and-probe magneto-optical technique. In particular, we show that the precession of magnetization due to OSTT can be experimentally separated from that induced by the well known magnetic-anisotropy-related mechanism in a hybrid structure piezo-stressor/(Ga,Mn)As with an in situ electrical control of the magnetic anisotropy. We also illustrate that OSTT is clearly apparent in the measured dynamical magneto-optical signal in a large variety of (Ga,Mn)As samples with a Mn concentration from 3% to 9%.

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preprint2010arXiv

Spin-orbit coupling induced anisotropy effects in bimetallic antiferromagnets: A route towards antiferromagnetic spintronics

Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state energy, chemical potential, and density of states, and attribute these anisotropies to combined effects of large moment on the Mn 3$d$ shell and large spin-orbit coupling on the 5$d$ shell of the noble metal. Large magnitudes of the proposed effects can open a route towards spintronics in compensated antiferromagnets without involving ferromagnetic elements.

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preprint2009arXiv

Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities

Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one realization of the AMR in which spin-orbit coupling enters via specific spin-textures on the carrier Fermi surfaces and ferromagnetism via elastic scattering of carriers from polarized magnetic impurities. We report detailed heuristic examination, using model spin-orbit coupled systems, of the emergence of positive AMR (maximum resistivity for magnetization along current), negative AMR (minimum resistivity for magnetization along current), and of the crystalline AMR (resistivity depends on the absolute orientation of the magnetization and current vectors with respect to the crystal axes) components. We emphasize potential qualitative differences between pure magnetic and combined electro-magnetic impurity potentials, between short-range and long-range impurities, and between spin-1/2 and higher spin-state carriers. Conclusions based on our heuristic analysis are supported by exact solutions to the integral form of the Boltzmann transport equation in archetypical two-dimensional electron systems with Rashba and Dresselhaus spin-orbit interactions and in the three-dimensional spherical Kohn-Littinger model. We include comments on the relation of our microscopic calculations to standard phenomenology of the full angular dependence of the AMR, and on the relevance of our study to realistic, two-dimensional conduction-band carrier systems and to anisotropic transport in the valence band of diluted magnetic semiconductors.

0 citations0 reviewsNo code linkedOpen access