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Tom Ward

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Artificial Intelligence cond-mat.mtrl-sci math.DS math.NT

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preprint2016arXiv

An elliptic sequence is not a sampled linear recurrence sequence

Let $E$ be an elliptic curve defined over the rationals and in minimal Weierstrass form, and let $P=(x_1/z_1^2,y_1/z_1^3)$ be a rational point of infinite order on $E$ , where $x_1,y_1,z_1$ are coprime integers. We show that the integer sequence $(z_n)$ defined by $nP=(x_n/z_n^2,y_n/z_n^3)$ for all $n\ge 1$ does not eventually coincide with $(u_{n^2})$ for any choice of linear recurrence sequence $(u_n)$ with integer values.

preprint2016arXiv

DeepMind Lab

DeepMind Lab is a first-person 3D game platform designed for research and development of general artificial intelligence and machine learning systems. DeepMind Lab can be used to study how autonomous artificial agents may learn complex tasks in large, partially observed, and visually diverse worlds. DeepMind Lab has a simple and flexible API enabling creative task-designs and novel AI-designs to be explored and quickly iterated upon. It is powered by a fast and widely recognised game engine, and tailored for effective use by the research community.

preprint2014arXiv

Design rules for dislocation filters

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm.

preprint2014arXiv

Halving dynamical systems

The relationship between two dynamical systems, one of which is obtained from the other by forming the quotient by an action of an involution commuting with the dynamics, is studied. The constraints and the possible extent of freedom in the relationship between the growth of closed orbits in pairs of systems related in this way is explored.

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