BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Todd Karin

Todd Karin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.otherphysics.atom-phphysics.ins-detquant-ph

Trust snapshot

Quick read

Trust 21 - Emerging
7works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2021arXiv

Non-destructive Characterization of Anti-Reflective Coatings on PV Modules

Anti-reflective coatings (ARCs) are used on the vast majority of solar photovoltaic (PV) modules to increase power production. However, ARC longevity can vary from less than 1 year to over 15 years depending on coating quality and deployment conditions. A technique that can quantify ARC degradation non-destructively on commercial modules would be useful both for in-field diagnostics and accelerated aging tests. In this paper, we demonstrate that accurate measurements of ARC spectral reflectance can be performed using a modified commercially-available integrating-sphere probe. The measurement is fast, accurate, non-destructive and can be performed outdoors in full-sun conditions. We develop an interferometric model that estimates coating porosity, thickness and fractional area coverage from the measured reflectance spectrum for a uniform single-layer coating. We demonstrate the measurement outdoors on an active PV installation, identify the presence of an ARC and estimate the properties of the coating.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Giant permanent dipole moment of 2D excitons bound to a single stacking fault

We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential leads to ultra-narrow photoluminescence emission lines (with full-width at half maximum ${\lesssim 80~μ\text{eV} }$) and reveals a large magnetic non-reciprocity effect that originates from the magneto-Stark effect for mobile excitons. These measurements unambiguously determine the direction and magnitude of the giant electric dipole moment (${\gtrsim e \cdot 10~\text{nm}}$) of the stacking-fault exciton, making stacking faults a promising new platform to study interacting excitonic gases.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors

We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$, $0.4~\text{ms}$ and $1.2~\text{ms}$, respectively. In GaAs and InP at low magnetic field, up to $\sim2~\text{T}$, the spin-relaxation mechanism is strongly density and temperature dependent and is attributed to the random precession of the electron spin in hyperfine fields caused by the lattice nuclear spins. In all three semiconductors at high magnetic field, we observe a power-law dependence ${T_1 \propto B^{-ν}}$ with ${3\lesssim ν\lesssim 4}$. Our theory predicts that the direct spin-phonon interaction is important in all three materials in this regime in contrast to quantum dot structures. In addition, the "admixture" mechanism caused by Dresselhaus spin-orbit coupling combined with single-phonon processes has a comparable contribution in GaAs. We find excellent agreement between high-field theory and experiment for GaAs and CdTe with no free parameters, however a significant discrepancy exists for InP.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 μeV and <0.2 μeV at low-temperature. These linewidths are more than three orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on timescales longer than 1 ns. The ultra-narrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Alignment of the Diamond Nitrogen Vacancy Center by Strain Engineering

The nitrogen vacancy (NV) center in diamond is a sensitive probe of magnetic field and a promising qubit candidate for quantum information processing. The performance of many NV-based devices improves by aligning the NV(s) parallel to a single crystallographic direction. Using ab initio theoretical techniques, we show that NV orientation can be controlled by high-temperature annealing in the presence of strain under currently accessible experimental conditions. We find that $(89\pm7)\%$ of NVs align along the [111] crystallographic direction under 2\% compressive biaxial strain (perpendicular to [111]) and an annealing temperature of 970$^\circ$C.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Radiative properties of multi-carrier bound excitons in GaAs

Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of ${k=0}$ excitons with an arbitrary number of charge carriers in different symmetry environments. Using this formalism, we predict three distinct lifetimes for the neutral acceptor bound exciton in GaAs, and confirm this prediction through polarization dependent and time-resolved photoluminescence experiments. We find the acceptor bound-exciton lifetimes to be ${T_o (1,3,3/4)}$ where ${T_o = (0.61 \pm 0.12) \text{ns}}$. Furthermore, we provide an estimate of the intra-level and inter-level exciton spin-relaxation rates.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport of charged particles by adjusting rf voltage amplitudes

We propose a planar architecture for scalable quantum information processing (QIP) that includes X-junctions through which particles can move without micromotion. This is achieved by adjusting radio frequency (rf) amplitudes to move an rf null along the legs of the junction. We provide a proof-of-principle by transporting dust particles in three dimensions via adjustable rf potentials in a 3D trap. For the proposed planar architecture, we use regularization techniques to obtain amplitude settings that guarantee smooth transport through the X-junction.

0 citations0 reviewsNo code linkedOpen access