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Todd Jones

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Published work

2 published item(s)

preprint2020arXiv

Delta-doped Electron Multiplying CCDs for FIREBall-2

We present the status of on-going detector development efforts for our joint NASA/CNES balloon-borne UV multi-object spectrograph, the Faint Intergalactic Redshifted Emission Balloon (FIREBall-2; FB-2). FB-2 demonstrates a new UV detector technology, the delta-doped Electron Multiplying CCD (EMCCD), in a low risk suborbital environment, to prove the performance of EMCCDs for future space missions and Technology Readiness Level (TRL) advancement. EMCCDs can be used in photon counting (PC) mode to achieve extremely low readout noise ($<$1 electron). Our testing has focused on reducing clock-induced-charge (CIC) through wave shaping and well depth optimization with a \nuvu V2 CCCP Controller, measuring CIC at 0.001 e$^{-}$/pixel/frame. This optimization also includes methods for reducing dark current, via cooling, and substrate voltage levels. We discuss the challenges of removing cosmic rays, which are also amplified by these detectors, as well as a data reduction pipeline designed for our noise measurement objectives. FB-2 flew in 2018, providing the first time an EMCCD was used for UV observations in the stratosphere. FB-2 is currently being built up to fly again in 2020, and improvements are being made to the EMCCD to continue optimizing its performance for better noise control.

preprint2011arXiv

Silicon Detector Arrays with Absolute Quantum Efficiency over 50% in the Far Ultraviolet for Single Photon Counting Applications

We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over 50% external QE in the far and near-ultraviolet in megapixel arrays. We have demonstrated that other device parameters such as dark current are unchanged after these processes. In this paper, we report on these results and briefly discuss the techniques and processes employed.