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Ting Cao

Ting Cao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticsArtificial Intelligencephysics.comp-phComputation and LanguageComputer Visioneess.SYInformation Retrievalquant-phSystems and Control

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Published work

13 published item(s)

preprint2026arXiv

EmbodiSkill: Skill-Aware Reflection for Self-Evolving Embodied Agents

Embodied agents can benefit from skills that guide object search, action execution, and state changes across diverse environments. Since embodied environments vary across layouts, object states, and other execution factors, these skills must self-evolve from trajectories generated during task execution. However, existing skill self-evolution methods are mainly developed in digital environments and often convert trajectories into coarse skill updates. Directly applying this paradigm to embodied settings is problematic, because a failed task execution may reflect not only incorrect skill content, but also an execution lapse in which the agent fails to follow valid guidance. We propose EmbodiSkill, a training-free framework for embodied skill self-evolution through skill-aware reflection and targeted revision. EmbodiSkill interprets each trajectory with respect to the current skill, uses skill-changing evidence to update the skill body, and uses execution-lapse evidence to preserve and emphasize valid guidance. Experiments on ALFWorld and EmbodiedBench show that EmbodiSkill consistently improves embodied task success. On ALFWorld, EmbodiSkill enables a frozen Qwen3.5-27B executor to reach 93.28% task success, outperforming GPT-5.2 used as a direct agent without skills by 31.58%. These results show that skill-aware self-evolution helps embodied agents accumulate reusable procedural knowledge from their own trajectories.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Strain-programmable van der Waals magnetic tunnel junctions

The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor used as the tunnel barrier. Switching the CrSBr from antiferromagnetic to ferromagnetic order generates a giant tunneling magnetoresistance ratio without external magnetic field at temperatures up to ~ 140 K. When the static strain is set near the phase transition, applying small strain pulses leads to active flipping of layer magnetization with controlled layer number and thus magnetoresistance states. Further, finely adjusting the static strain to a critical value turns on stochastic switching between metastable states, with a strain-tunable sigmoidal response curve akin to the stochastic binary neuron. Our results highlight the potential of strain-programmable van der Waals MTJs towards spintronic applications, such as magnetic memory, random number generation, and probabilistic and neuromorphic computing.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ab initio calculations of spin-nonconserving exciton-phonon scattering in monolayer transition metal dichalcogenides

We investigate the spin-nonconserving relaxation channel of excitons by their couplings with phonons in two-dimensional transition metal dichalcogenides using $\textit{ab initio}$ approaches. Combining $\text{GW}$-Bethe-Salpeter equation method and density functional perturbation theory, we calculate the electron-phonon and exciton-phonon coupling matrix elements for the spin-flip scattering in monolayer WSe$_{\text{2}}$, and further analyze the microscopic mechanisms influencing these scattering strengths. We find that phonons could produce effective in-plane magnetic fields which flip spin of excitons, giving rise to relaxation channels complimentary to the spin-conserving relaxation. Finally, we calculate temperature-dependent spin-flip exciton-phonon relaxation times. Our method and analysis can be generalized to study other two-dimensional materials and would stimulate experimental measurements of spin-flip exciton relaxation dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Long-range transport of 2D excitons with acoustic waves

Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 mm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

SwiftPruner: Reinforced Evolutionary Pruning for Efficient Ad Relevance

Ad relevance modeling plays a critical role in online advertising systems including Microsoft Bing. To leverage powerful transformers like BERT in this low-latency setting, many existing approaches perform ad-side computations offline. While efficient, these approaches are unable to serve cold start ads, resulting in poor relevance predictions for such ads. This work aims to design a new, low-latency BERT via structured pruning to empower real-time online inference for cold start ads relevance on a CPU platform. Our challenge is that previous methods typically prune all layers of the transformer to a high, uniform sparsity, thereby producing models which cannot achieve satisfactory inference speed with an acceptable accuracy. In this paper, we propose SwiftPruner - an efficient framework that leverages evolution-based search to automatically find the best-performing layer-wise sparse BERT model under the desired latency constraint. Different from existing evolution algorithms that conduct random mutations, we propose a reinforced mutator with a latency-aware multi-objective reward to conduct better mutations for efficiently searching the large space of layer-wise sparse models. Extensive experiments demonstrate that our method consistently achieves higher ROC AUC and lower latency than the uniform sparse baseline and state-of-the-art search methods. Remarkably, under our latency requirement of 1900us on CPU, SwiftPruner achieves a 0.86% higher AUC than the state-of-the-art uniform sparse baseline for BERT-Mini on a large scale real-world dataset. Online A/B testing shows that our model also achieves a significant 11.7% cut in the ratio of defective cold start ads with satisfactory real-time serving latency.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Turbo: Opportunistic Enhancement for Edge Video Analytics

Edge computing is being widely used for video analytics. To alleviate the inherent tension between accuracy and cost, various video analytics pipelines have been proposed to optimize the usage of GPU on edge nodes. Nonetheless, we find that GPU compute resources provisioned for edge nodes are commonly under-utilized due to video content variations, subsampling and filtering at different places of a pipeline. As opposed to model and pipeline optimization, in this work, we study the problem of opportunistic data enhancement using the non-deterministic and fragmented idle GPU resources. In specific, we propose a task-specific discrimination and enhancement module and a model-aware adversarial training mechanism, providing a way to identify and transform low-quality images that are specific to a video pipeline in an accurate and efficient manner. A multi-exit model structure and a resource-aware scheduler is further developed to make online enhancement decisions and fine-grained inference execution under latency and GPU resource constraints. Experiments across multiple video analytics pipelines and datasets reveal that by judiciously allocating a small amount of idle resources on frames that tend to yield greater marginal benefits from enhancement, our system boosts DNN object detection accuracy by $7.3-11.3\%$ without incurring any latency costs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Designing Artificial Two-Dimensional Landscapes via Room-Temperature Atomic-Layer Substitution

Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. The family of 2D materials provides an ideal platform to realize atomic-level material architectures. The wide and rich physics of these materials have led to fabrication of heterostructures, superlattices, and twisted structures with breakthrough discoveries and applications. Here, we report a novel atomic-scale material design tool that selectively breaks and forms chemical bonds of 2D materials at room temperature, called atomic-layer substitution (ALS), through which we can substitute the top layer chalcogen atoms within the 3-atom-thick transition-metal dichalcogenides using arbitrary patterns. Flipping the layer via transfer allows us to perform the same procedure on the other side, yielding programmable in-plane multi-heterostructures with different out-of-plane crystal symmetry and electric polarization. First-principle calculations elucidate how the ALS process is overall exothermic in energy and only has a small reaction barrier, facilitating the reaction to occur at room temperature. Optical characterizations confirm the fidelity of this design approach, while TEM shows the direct evidence of Janus structure and suggests the atomic transition at the interface of designed heterostructure. Finally, transport and Kelvin probe measurements on MoXY (X,Y=S,Se; X and Y corresponding to the bottom and top layers) lateral multi-heterostructures reveal the surface potential and dipole orientation of each region, and the barrier height between them. Our approach for designing artificial 2D landscape down to a single layer of atoms can lead to unique electronic, photonic and mechanical properties previously not found in nature.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nonanalyticity, Valley Quantum Phases, and Light-like Exciton Dispersion in Monolayer TMDs: Theory and First-Principles Calculations

Exciton dispersion as a function of center-of-mass momentum, \textbf{Q}, is essential to the understanding of exciton dynamics. We use the ab-initio GW-Bethe Salpeter equation method to calculate the dispersion of excitons in monolayer MoS$_2$ and find a nonanalytic light-like dispersion. This behavior arises from an unusual $|Q|$ term in both the intra- and inter-valley exchange of the electron-hole interaction, which concurrently gives rise to a valley quantum phase of winding number two. A simple effective Hamiltonian to $Q^2$ order with analytic solutions is derived to describe quantitatively these behaviors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Evolution of Interlayer Coupling in Twisted MoS2 Bilayers

Van der Waals (vdW) coupling is emerging as a powerful method to engineer and tailor physical properties of atomically thin two-dimensional (2D) materials. In graphene/graphene and graphene/boron-nitride structures it leads to interesting physical phenomena ranging from new van Hove singularities1-4 and Fermi velocity renormalization5, 6 to unconventional quantum Hall effects7 and Hofstadter's butterfly pattern8-12. 2D transition metal dichalcogenides (TMDCs), another system of predominantly vdW-coupled atomically thin layers13, 14, can also exhibit interesting but different coupling phenomena because TMDCs can be direct or indirect bandgap semiconductors15, 16. Here, we present the first study on the evolution of interlayer coupling with twist angles in as-grown MoS2 bilayers. We find that an indirect bandgap emerges in bilayers with any stacking configuration, but the bandgap size varies appreciably with the twist angle: it shows the largest redshift for AA- and AB-stacked bilayers, and a significantly smaller but constant redshift for all other twist angles. The vibration frequency of the out-of-plane phonon in MoS2 shows similar twist angle dependence. Our observations, together with ab initio calculations, reveal that this evolution of interlayer coupling originates from the repulsive steric effects, which leads to different interlayer separations between the two MoS2 layers in different stacking configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Probing Excitonic Dark States in Single-layer Tungsten Disulfide

Transition metal dichalcogenide (TMDC) monolayer has recently emerged as an important two-dimensional semiconductor with promising potentials for electronic and optoelectronic devices. Unlike semi-metallic graphene, layered TMDC has a sizable band gap. More interestingly, when thinned down to a monolayer, TMDC transforms from an indirect bandgap to a direct bandgap semiconductor, exhibiting a number of intriguing optical phenomena such as valley selective circular dichroism, doping dependent charged excitons, and strong photocurrent responses. However, the fundamental mechanism underlying such a strong light-matter interaction is still under intensive investigation. The observed optical resonance was initially considered to be band-to-band transitions. In contrast, first-principle calculations predicted a much larger quasiparticle band gap size and an optical response that is dominated by excitonic effects. Here, we report experimental evidence of the exciton dominance mechanism by discovering a series of excitonic dark states in single-layer WS2 using two-photon excitation spectroscopy. In combination with GW-BSE theory, we find the excitons are Wannier excitons in nature but possess extraordinarily large binding energy (~0.7 eV), leading to a quasiparticle band gap of 2.7 eV. These strongly bound exciton states are observed stable even at room temperature. We reveal an exciton series in significant deviation from hydrogen models, with a novel inverse energy dependence on the orbital angular momentum. These excitonic energy levels are experimentally found robust against environmental perturbations. The discovery of excitonic dark states and exceptionally large binding energy not only sheds light on the importance of many-electron effects in this two-dimensional gapped system, but also holds exciting potentials for the device application of TMDC monolayers and their heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tunable Magnetism and Half-Metallicity in Hole-doped Monolayer GaSe

We find, through first-principles calculations, that hole doping induces a ferromagnetic phase transition in monolayer GaSe. Upon increasing hole density, the average spin magnetic moment per carrier increases and reaches a plateau near 1.0 $μ_{\rm{B}}$/carrier in a range of $3\times 10^{13}$/cm$^{2}$-$1\times 10^{14}$/cm$^{2}$ with the system in a half-metal state before the moment starts to descend abruptly. The predicted magnetism originates from an exchange splitting of electronic states at the top of the valence band where the density of states exhibits a sharp van Hove singularity in this quasi-two-dimensional system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coupling the valley degree of freedom to antiferromagnetic order

Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics and advanced information technology. Valley as a new electronic degree of freedom has received considerable attention in recent years. In this paper, we develop the theory of spin and valley physics of an antiferromagnetic honeycomb lattice. We show that by coupling the valley degree of freedom to antiferromagnetic order, there is an emergent electronic degree of freedom characterized by the product of spin and valley indices, which leads to spin-valley dependent optical selection rule and Berry curvature-induced topological quantum transport. These properties will enable optical polarization in the spin-valley space, and electrical detection/manipulation through the induced spin, valley and charge fluxes. The domain walls of an antiferromagnetic honeycomb lattice harbors valley-protected edge states that support spin-dependent transport. Finally, we employ first principles calculations to show that the proposed optoelectronic properties can be realized in antiferromagnetic manganese chalcogenophosphates (MnPX_3, X = S, Se) in monolayer form.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this emergent degree of freedom of charge carriers, in what is termed "valleytronics", if charge carrier imbalance between the valleys can be achieved. The physics of valley polarization will make possible electronic devices such as valley filter and valley valve, and optoelectronic Hall devices, all very promising for next-generation electronic and optoelectronic applications. The key challenge lies with achieving valley imbalance, of which a convincing demonstration in a two-dimensional honeycomb structure remains evasive, while there are only a handful of examples for other materials. We show here, using first principles calculations, that monolayer MoS_2, a novel two-dimensional semiconductor with a 1.8 eV direct band gap, is an ideal material for valleytronics by valley- selective circular dichroism, with ensuing valley polarization and valley Hall effect.

0 citations0 reviewsNo code linkedOpen access