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Tiejun Zhou

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cond-mat.mtrl-sci physics.app-ph

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preprint2022arXiv

Field free switching through bulk spin-orbit torque in L10-FePt films deposited on vicinal substrates

L10-FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy (PMA), which enables memory cells with sufficient thermal stability to scale down to 3 nm. The recently discovered "bulk" spin-orbit torques in L10-FePt provide an efficient and scalable way to manipulate the L10-FePt magnetization. However, the existence of external field during the switching limits its practical application, and therefore field-free switching of the L10-FePt is in highly demand. In this manuscript, we demonstrate the field-free switching of the L10-FePt by growing it on vicinal MgO (001) substrates. This method is different from previously established strategies, as it does not need to add other functional layers or create asymmetry in the film structure. We demonstrate the field-free switching is robust and can withstand strong field disturbance up to ~1 kOe. The dependence on vicinal angle, film thickness, and growth temperature demonstrated a wide operation window for the field-free switching of the L10-FePt. We confirmed that the physical origin of the field-free switching is the vicinal surface-induced the tilted anisotropy of L10-FePt. We quantitatively characterize the spin-orbit torques in the L10-FePt films, and found the spin-orbit torques are not significantly influenced by the lattice strain from vicinal substrates. Our results extend beyond the established strategies to realize field-free switching, and potentially could be applied to other magnetic and antiferromagnetic systems.

preprint2022arXiv

Multiferroic materials based on transition-metal dichalcogenides: Potential platform for reversible control of Dzyaloshinskii-Moriya interaction and skyrmion via electric field

Exploring novel two-dimensional multiferroic materials that can realize electric-field control of two-dimensional magnetism has become an emerging topic in spintronics. Using first-principles calculations, we demonstrate that non-metallic bilayer transition metal dichalcogenides (TMDs) can be an ideal platform for building multiferroics by intercalated magnetic atoms. Moreover, we unveil that with Co intercalated bilayer MoS2, Co(MoS2)2, two energetic degenerate states with opposite chirality of Dzyaloshinskii-Moriya interaction (DMI) are the ground states, indicating electric-field control of the chirality of topologic magnetism such as skyrmions can be realized in this type of materials by reversing the electric polarization. These findings pave the way for electric-field control of topological magnetism in two-dimensional multiferroics with intrinsic magnetoelectric coupling.

preprint2018arXiv

Electrical switching of perpendicular magnetization in L10 FePt single layer

Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally or locally broken inversion symmetry. Here we demonstrate the current induced perpendicular magnetization switching in L10 FePt single layer. The current induced spin-orbit effective fields in L10 FePt increase with the chemical ordering parameter (S). In 20 nm FePt films with high S, we observe a large charge-to-spin conversion efficiency and a switching current density as low as 7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of the spin-orbit torques in bulk perpendicular magnetic anisotropic materials and the application of high-efficient perpendicular magnetization switching in single FM layer.

preprint2016arXiv

A versatile rotary-stage high frequency probe station for studying magnetic films and devices

We present a rotary-stage microwave probe station suitable for magnetic films and spintronic devices. Two stages, one for field rotation from parallel to perpendicular to the sample plane (Out-of-Plane) and the other intended for field rotation within the sample plane (In-Plane) have been designed. The sample, probes and micro positioners are rotated simultaneously with the stages, which allows the field orientation to cover $θ$ from 0 to $90^{\circ}$ and $φ$ from 0 to $360^{\circ}$. $θ$ and $φ$ being the angle between the direction of current flow and field in a Out-of-Plane and an In-Plane rotation, respectively. The operation frequency is up to 40 GHz and the magnetic field up to 1 T. The sample holder, vision system and probe assembly are compactly designed for the probes to land on a wafer with diameter up to 3$\,$cm. Using homemade multi-pin probes and commercially available high frequency probes, several applications including 4-probe DC measurements, the determination of domain wall velocity and spin transfer torque ferromagnetic resonance are demonstrated.