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Tibor Grasser

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cond-mat.mes-hall cond-mat.mtrl-sci Distributed, Parallel, and Cluster Computing Mathematical Software Performance

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preprint2016arXiv

Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units

We revisit the implementation of iterative solvers on discrete graphics processing units and demonstrate the benefit of implementations using extensive kernel fusion for pipelined formulations over conventional implementations of classical formulations. The proposed implementations with both CUDA and OpenCL are freely available in ViennaCL and are shown to be competitive with or even superior to other solver packages for graphics processing units. Highest performance gains are obtained for small to medium-sized systems, while our implementations are on par with vendor-tuned implementations for very large systems. Our results are especially beneficial for transient problems, where many small to medium-sized systems instead of a single big system need to be solved.

preprint2014arXiv

NBTI in Nanoscale MOSFETs - The Ultimate Modeling Benchmark

After nearly half a century of research into the bias temperature instability (BTI), two classes of models have emerged as the strongest contenders: one class of models, the reaction-diffusion models, is built around the idea that hydrogen is released from the interface and that it is the diffusion of some form of hydrogen that controls both degradation and recovery. While many different variants of the reaction-diffusion idea have been published over the years, the most commonly used recent models are based on non-dispersive reaction rates and non- dispersive diffusion. The other class of models is based on the idea that degradation is controlled by first-order reactions with widely distributed (dispersive) reaction rates. We demonstrate that these two classes give fundamentally different predictions for the stochastic degradation and recovery of nanoscale devices, therefore providing the ultimate modeling benchmark. Using de- tailed experimental time-dependent defect spectroscopy (TDDS) data obtained on such nanoscale devices, we investigate the compatibility of these models with experiment. Our results show that the diffusion of hydrogen (or any other species) is unlikely to be the limiting aspect that determines degradation. On the other hand, the data are fully consistent with reaction-limited models. We finally argue that only the correct understanding of the physical mechanisms leading to the significant device-to-device variation observed in the degradation in nanoscale devices will enable accurate reliability projections and device optimization.