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Tianli Jin

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Published work

2 published item(s)

preprint2021arXiv

Nano-engineering the evolution of skyrmion crystal in synthetic antiferromagnets

The evolution of skyrmion crystal encapsulates skyrmion critical behaviors, such as nucleation, deformation and annihilation. Here, we achieve a tunable evolution of artificial skyrmion crystal in nanostructured synthetic antiferromagnet multilayers, which are comprised of perpendicular magnetic multilayers and nanopatterned arrays of magnetic nanodots. The out-of-plane magnetization hysteresis loops and first-order reversal curves show that the nucleation and annihilation of the artificial skyrmion can be controlled by tuning the diameter of and spacing between the nanodots. Moreover, when the bottom layer thickness increases, the annihilation of skyrmion shifts from evolving into a ferromagnetic spin texture to evolving into an antiferromagnetic spin texture. Most significantly, non-volatile multiple states are realized at zero magnetic field via controlling the proportion of the annihilated skyrmions in the skyrmion crystal. Our results demonstrate the tunability and flexibility of the artificial skyrmion platform, providing a promising route to achieve skyrmion-based multistate devices, such as neuromorphic spintronic devices.

preprint2020arXiv

Ultra-low Power Domain Wall Device for Spin-based Neuromorphic Computing

Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to achieve low-power intelligent devices. To realize NC, researchers investigate various types of synthetic neurons and synaptic devices such as memristors and spintronic domain wall (DW) devices. In comparison, DW-based neurons and synapses have potentially higher endurance. However, for realizing low-power devices, DW motion at low energies - typically below pJ/bit - are needed. Here, we demonstrate domain wall motion at current densities as low as 1E6 A/m2 by tailoring the beta-W spin Hall material. With our design, we achieve ultra-low pinning fields and current density reduction by a factor of 10000. The energy required to move the domain wall by a distance of about 20 micrometers is 0.4 fJ, which translates into energy consumption of 0.4 aJ/bit for a bit-length of 20 nm. With a meander domain wall device configuration, we have established a controlled DW motion for synapse applications and have shown the direction to make ultra-low energy spin-based neuromorphic elements.