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Tianli Feng

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2026arXiv

Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance

AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) layer is often present, either unintentionally during growth or intentionally to induce a 2D electron gas, yet its impact on the interfacial thermal boundary conductance (TBC) remains unknown due to the lack of reliable measurement or modeling methods. Here, we report a first principles-based evaluation of the TBCs of AlN-AlGaN, AlGaN-GaN, and AlN-AlGaN-GaN interfaces over the full alloy range. This is realized by the development of accurate deep learning interatomic potentials based on first-principles simulations. Contrary to other material systems where mixed interlayers enhance thermal coupling, we find that an AlGaN interlayer markedly degrades TBC between GaN and AlN, explaining the observation in experiments. Finally, we show that if the Al composition is sigmoidally transitioned from 0 to 1 across the AlN-GaN interface, it can remarkably increase the TBC, compared to an abrupt or a linear transition. This work is expected to shed light on an accurate thermal analysis and electro-thermal co-design of future AlGaN-based devices.

preprint2025arXiv

Bridging Finite Element and Molecular Dynamics for Non-Fourier Thermal Transport Near Nanoscale Hot Spot

Nanoscale hot spots forming tens of nanometers beneath the gate in advanced FinFET and HEMT devices drive heat transport into a non-Fourier regime, challenging conventional (Fourier-based) finite-element (FEM) analyses and complicating future thermal-aware chip design. Molecular dynamics (MD) naturally captures ballistic transport and phonon nonequilibrium, but has not been applied to hot-spot problems due to computational cost. Here, we perform the first MD simulations of hot-spot heat transfer across ballistic-diffusive regimes and benchmark them against FEM. We find that FEM using bulk thermal conductivity $κ_0$ significantly underestimates hot-spot temperature, even when the channel thickness is ~10 times the phonon mean free path, indicating persistent non-Fourier effects. We introduce a size-dependent "best" conductivity, $κ_{\mathrm{best}}$, using which FEM can reproduce MD hot-spot temperatures with high fidelity. We further decompose the MD-extracted thermal resistance into: (i) diffusive spreading, (ii) cross-plane ballistic, (iii) heat-carrier selective heating, and (iv) residual 3D ballistic-spreading resistances, and quantify each contribution. The resulting framework offers a practical route to embed non-Fourier physics into FEM for hot-spot prediction, reliability assessment, and thermally aware design of next-generation transistors.

preprint2021arXiv

Raman Linewidth Contributions from Four-Phonon and Electron-Phonon Interactions in Graphene

The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions (EPI) in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with increasing temperature, which is opposite to measurement results. Here, we explicitly consider four-phonon anharmonicity, phonon renormalization, and electron-phonon coupling, and find all to be important to successfully explain both the $G$ peak frequency shift and linewidths in our suspended graphene sample at a wide temperature range. Four-phonon scattering contributes a prominent linewidth that increases with temperature, while temperature dependence from EPI is found to be reversed above a doping threshold ($\hbarω_G/2$, with $ω_G$ being the frequency of the $G$ phonon).

preprint2019arXiv

Role of higher-order phonon scattering in the zone-center optical phonon linewidth and the Lorenz oscillator model

Zone-center optical phonon linewidth is a key parameter for infrared and Raman spectra as well as the Lorenz oscillator model. While three-phonon scattering was often assumed to be the leading contribution, in this work we find, surprisingly, that higher-order phonon scattering universally plays a significant or even dominant role over three-phonon scattering at room temperature, and more so at elevated temperatures, for a wide range of materials including diamond, Si, Ge, boron arsenide (BAs), cubic silicon carbide (3C-SiC), and $α$-quartz. This is enabled by the large fourphonon scattering phase space of zone-center optical phonons, and distinct from heat conduction where at room temperature four-phonon scattering is still secondary to three-phonon scattering. Moreover, our results imply that five-phonon and even higher-order scattering may be significant for some large band-gap materials, e.g., BAs. Our predicted infrared optical properties through the Lorenz oscillator model, after including four-phonon scattering, show much better agreement with experimental measurements than those three-phonon based predictions. This work will raise broad interest of studying high-order scattering in various areas beyond heat conduction.

preprint2018arXiv

Diffuson-driven Ultralow Thermal Conductivity in Amorphous Nb2O5 Thin Films

Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding of heat transport in Nb2O5 is still lacking. The present work closes this gap and provides the first study of thermal conductivity of amorphous Nb2O5 thin films. Ultralow thermal conductivity is observed without any size effect in films as thin as 48 nm, which indicates that propagons contribute negligibly to the thermal conductivity and that the thermal transport is dominated by diffusons. Density-function-theory (DFT) simulations combined with a diffuson-mediated minimum-thermal-conductivity model confirms this finding. Additionally, the measured thermal conductivity is lower than the amorphous limit (Cahill model), which proves that the diffuson model works better than the Cahill model to describe the thermal conduction mechanism in the amorphous Nb2O5 thin films. Additionally, the thermal conductivity does not change significantly with oxygen vacancy concentration. This stable and low thermal conductivity facilitates excellent performance for applications such as memristors.

preprint2016arXiv

Quantum mechanical prediction of four-phonon scattering rates and reduced thermal conductivity of solids

Recently, first principle-based prediction of lattice thermal conductivity $κ$ from the perturbation theory has achieved significant success. However, it only includes three-phonon scattering due to the assumption that four-phonon and higher-order processes are generally unimportant. Also, directly evaluating the scattering rates of four-phonon and higher-order processes has been a long-standing challenge. In this work, however, we have developed a formalism to explicitly determine quantum mechanical scattering probability matrices for four-phonon scattering in the full Brillouin Zone, and by mitigating the computational challenge we have directly calculated four-phonon scattering rates. We find that four-phonon scattering rates are comparable to three-phonon scattering rates at medium and high temperatures, and they increase quadratically with temperature. As a consequence, $κ$ of Lennard-Jones argon is reduced by more than 60% at 80 K when four-phonon scattering is included. Also, in less anharmonic materials -- diamond, silicon, and germanium, $κ$ is still reduced considerably at high temperature by four-phonon scattering. Also, the thermal conductivity of optical phonons is dominated by the fourth and higher orders phonon scattering even at low temperature.

preprint2015arXiv

Coupling between Phonon-Phonon and Phonon-Impurity Scattering: A Critical Revisit of the Spectral Matthiessen's Rule

The spectral Matthiessen's rule is commonly used to calculate the total phonon scattering rate when multiple scattering mechanisms exist. Here we predict the spectral phonon relaxation time $τ$ of defective bulk silicon using normal mode analysis based on molecular dynamics, and show that the spectral Matthiessen's rule is not accurate due to the neglect of the coupling between anharmonic phonon-phonon scattering $τ_a^{-1}$ and phonon-impurity scattering $τ_i^{-1}$. As a result, the spectral Matthiessen's rule underestimates the total phonon scattering rate, and hence overestimates the thermal conductivity $κ$ of mass-doped and Ge-doped silicon by about 20-40%. We have also directly estimated this coupling scattering rate, so called coupled five-phonon scattering $τ_{\rm couple}^{-1}$, and achieved good agreement between $τ_a^{-1}+τ_i^{-1}+τ_{\rm couple}^{-1}$ and the total scattering rate $τ_{tot}^{-1}$.