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Researcher profile

Tian Qian

Tian Qian contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hall

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Published work

5 published item(s)

preprint2026arXiv

Three-dimensional topological insulator feature of ternary chalcogenide Ge2Bi2Te5

The exploration of novel topological insulators (TIs) beyond binary chalcogenides has been accelerated in pursuit of exotic quantum states and device applications. Here, the layered ternary chalcogenide Ge2Bi2Te5 is identified as a three-dimensional TI. The bulk electronic structure of Ge2Bi2Te5 features a hole-type Fermi surface at Fermi level EF, which dominates the transport properties. Moreover, an unoccupied topological surface state with a Dirac point located at 290 meV above EF has been observed. Theoretical calculations confirm a bulk bandgap and a nontrivial Z2 topological invariant (000;1). The present study demonstrates that the material family of layered tetradymite-like ternary compounds is an important platform to explore exotic topological phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Continuously Doping Bi 2 Sr 2 CaCu 2 O 8+δ into Electron-Doped Superconductor by CaH 2 Annealing Method

As a typical hole-doped cuprate superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) carrier doping is mostly determined by its oxygen content. Traditional doping methods can regulate its doping level within the range of hole doping. Here we report the first application of CaH 2 annealing method in regulating the doping level of Bi2212. By continuously controlling the anneal time, a series of differently doped samples can be obtained. The combined experimental results of x-ray diffraction, scanning transmission electron microscopy, resistance and Hall measurements demonstrate that the CaH 2 induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range, even switching from hole doping to electron doping. We also found evidence of a low-T c superconducting phase in the electron doping side.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Discovery of two families of VSb-based compounds with V-kagome lattice

We report the structure and physical properties of two newly-discovered compounds AV8Sb12 and AV6Sb6 (A = Cs, Rb), which have C2 (space group: Cmmm) and C3 (space group: R-3m) symmetry, respectively. The basic V-kagome unit is present in both compounds, but stacking differently. A V2Sb2 layer is sandwiched between two V3Sb5 layers in AV8Sb12, altering the V-kagome lattice and lowering the symmetry of kagome layer from hexagonal to orthorhombic. In AV6Sb6, the building block is a more complex slab made up of two half-V3Sb5 layers that are intercalated by Cs cations along the c-axis. Transport property measurements demonstrate that both compounds are nonmagnetic metals, with carrier concentrations at around 1021cm-3. No superconductivity has been observed in CsV8Sb12 above 0.3 K under in-situ pressure up to 46 GPa. In contrast to CsV3Sb5, theoretical calculations and angle-resolved photoemission spectroscopy (ARPES) reveal a quasi-two-dimensional electronic structure in CsV8Sb12 with C2 symmetry and no van Hove singularities near the Fermi level. Our findings will stimulate more research into V-based kagome quantum materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetic topological insulator MnBi6Te10 with zero-field ferromagnetic state and gapped Dirac surface states

Magnetic topological insulators (TIs) with nontrivial topological electronic structure and broken time-reversal symmetry exhibit various exotic topological quantum phenomena. The realization of such exotic phenomena at high temperature is one of central topics in this area. We reveal that MnBi6Te10 is a magnetic TI with an antiferromagnetic ground state below 10.8 K whose nontrivial topology is manifested by Dirac-like surface states. The ferromagnetic axion insulator state with Z4 = 2 emerges once spins polarized at field as low as 0.1 T, accompanied with saturated anomalous Hall resistivity up to 10 K. Such a ferromagnetic state is preserved even external field down to zero at 2 K. Theoretical calculations indicate that the few-layer ferromagnetic MnBi6Te10 is also topologically nontrivial with a non-zero Chern number. Angle-resolved photoemission spectroscopy experiments further reveal three types of Dirac surface states arising from different terminations on the cleavage surfaces, one of which has insulating behavior with an energy gap of ~ 28 meV at the Dirac point. These outstanding features suggest that MnBi6Te10 is a promising system to realize various topological quantum effects at zero field and high temperature.

0 citations0 reviewsNo code linkedOpen access