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Tian Qian

Tian Qian appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.supr-concond-mat.mtrl-scicond-mat.mes-hall

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Published work

10 published item(s)

preprint2026arXiv

Three-dimensional topological insulator feature of ternary chalcogenide Ge2Bi2Te5

The exploration of novel topological insulators (TIs) beyond binary chalcogenides has been accelerated in pursuit of exotic quantum states and device applications. Here, the layered ternary chalcogenide Ge2Bi2Te5 is identified as a three-dimensional TI. The bulk electronic structure of Ge2Bi2Te5 features a hole-type Fermi surface at Fermi level EF, which dominates the transport properties. Moreover, an unoccupied topological surface state with a Dirac point located at 290 meV above EF has been observed. Theoretical calculations confirm a bulk bandgap and a nontrivial Z2 topological invariant (000;1). The present study demonstrates that the material family of layered tetradymite-like ternary compounds is an important platform to explore exotic topological phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Continuously Doping Bi 2 Sr 2 CaCu 2 O 8+δ into Electron-Doped Superconductor by CaH 2 Annealing Method

As a typical hole-doped cuprate superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) carrier doping is mostly determined by its oxygen content. Traditional doping methods can regulate its doping level within the range of hole doping. Here we report the first application of CaH 2 annealing method in regulating the doping level of Bi2212. By continuously controlling the anneal time, a series of differently doped samples can be obtained. The combined experimental results of x-ray diffraction, scanning transmission electron microscopy, resistance and Hall measurements demonstrate that the CaH 2 induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range, even switching from hole doping to electron doping. We also found evidence of a low-T c superconducting phase in the electron doping side.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Discovery of two families of VSb-based compounds with V-kagome lattice

We report the structure and physical properties of two newly-discovered compounds AV8Sb12 and AV6Sb6 (A = Cs, Rb), which have C2 (space group: Cmmm) and C3 (space group: R-3m) symmetry, respectively. The basic V-kagome unit is present in both compounds, but stacking differently. A V2Sb2 layer is sandwiched between two V3Sb5 layers in AV8Sb12, altering the V-kagome lattice and lowering the symmetry of kagome layer from hexagonal to orthorhombic. In AV6Sb6, the building block is a more complex slab made up of two half-V3Sb5 layers that are intercalated by Cs cations along the c-axis. Transport property measurements demonstrate that both compounds are nonmagnetic metals, with carrier concentrations at around 1021cm-3. No superconductivity has been observed in CsV8Sb12 above 0.3 K under in-situ pressure up to 46 GPa. In contrast to CsV3Sb5, theoretical calculations and angle-resolved photoemission spectroscopy (ARPES) reveal a quasi-two-dimensional electronic structure in CsV8Sb12 with C2 symmetry and no van Hove singularities near the Fermi level. Our findings will stimulate more research into V-based kagome quantum materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetic topological insulator MnBi6Te10 with zero-field ferromagnetic state and gapped Dirac surface states

Magnetic topological insulators (TIs) with nontrivial topological electronic structure and broken time-reversal symmetry exhibit various exotic topological quantum phenomena. The realization of such exotic phenomena at high temperature is one of central topics in this area. We reveal that MnBi6Te10 is a magnetic TI with an antiferromagnetic ground state below 10.8 K whose nontrivial topology is manifested by Dirac-like surface states. The ferromagnetic axion insulator state with Z4 = 2 emerges once spins polarized at field as low as 0.1 T, accompanied with saturated anomalous Hall resistivity up to 10 K. Such a ferromagnetic state is preserved even external field down to zero at 2 K. Theoretical calculations indicate that the few-layer ferromagnetic MnBi6Te10 is also topologically nontrivial with a non-zero Chern number. Angle-resolved photoemission spectroscopy experiments further reveal three types of Dirac surface states arising from different terminations on the cleavage surfaces, one of which has insulating behavior with an energy gap of ~ 28 meV at the Dirac point. These outstanding features suggest that MnBi6Te10 is a promising system to realize various topological quantum effects at zero field and high temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Interplay between multiple charge-density waves and the relationship with superconductivity in Pd$_x$HoTe$_{3}$

HoTe$_{3}$, a member of the rare-earth tritelluride ($R$Te$_{3}$) family, and its Pd-intercalated compounds, Pd$_x$HoTe$_{3}$, where superconductivity (SC) sets in as the charge-density wave (CDW) transition is suppressed by the intercalation of a small amount of Pd, are investigated using angle-resolved photoemission spectroscopy (ARPES) and electrical resistivity. Two incommensurate CDWs with perpendicular nesting vectors are observed in HoTe$_{3}$ at low temperatures. With a slight Pd intercalation ($x$ = 0.01), the large CDW gap decreases and the small one increases. The momentum dependence of the gaps along the inner Fermi surface (FS) evolves from orthorhombicity to near tetragonality, manifesting the competition between two CDW orders. At $x$ = 0.02, both CDW gaps decreases with the emergence of SC. Further increasing the content of Pd for $x$ = 0.04 will completely suppress the CDW instabilities and give rise to the maximal SC order. The evolution of the electronic structures and electron-phonon couplings (EPCs) of the multiple CDWs upon Pd intercalation are carefully scrutinized. We discuss the interplay between multiple CDW orders, and the competition between CDW and SC in detail.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Sudden gap-closure across the topological phase transition in Bi$_{2-x}$In$_{x}$Se$_{3}$

The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band structures throughout the transition. The robust surface state and the bulk gap size ($\sim$ 0.50 eV) show no significant change upon doping for $x$ = 0.05, 0.10 and 0.175. At $x$ $\geq$ 0.225, the surface state completely disappears and the bulk gap size increases, suggesting a sudden gap-closure and topological phase transition around $x \sim$ 0.175$-$0.225. We discuss the underlying mechanism of the phase transition, proposing that it is governed by the combined effect of spin-orbit coupling and interactions upon band hybridization. Our study provides a new venue to investigate the mechanism of the topological phase transition induced by non-magnetic impurities.

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preprint2015arXiv

Observation of a van Hove singularity and implication for strong coupling induced Cooper pairing in KFe2As2

Scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) have been investigated on single crystal samples of KFe2As2. A van Hove singularity (vHs) has been directly observed just a few meV below the Fermi level E_F of superconducting KFe2As2, which locates in the middle of the principle axes of the first Brillouin zone. The majority of the density-of-states at E_F, mainly contributed by the proximity effect of the saddle point to E_F, is non-gapped in the superconducting state. Our observation of nodal behavior of the momentum area close to the vHs points, while providing consistent explanations to many exotic behaviours previously observed in this material, suggests Cooper pairing induced by a strong coupling mechanism.

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preprint2015arXiv

Tetragonal and collapsed-tetragonal phases of CaFe2As2 -- a view from angle-resolved photoemission and dynamical mean field theory

We present a study of the tetragonal to collapsed-tetragonal transition of CaFe2As2 using angle-resolved photoemission experiments and dynamical mean field theory-based electronic structure calculations. We observe that the collapsed-tetragonal phase exhibits reduced correlations and a higher coherence temperature due to the stronger Fe-As hybridization. Furthermore, a comparison of measured photoemission spectra and theoretical spectral functions shows that momentum-dependent corrections to the density functional band structure are essential for the description of low-energy quasiparticle dispersions. We introduce those using the recently proposed combined "Screened Exchange + Dynamical Mean Field Theory" scheme.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Correlation-induced self-doping in intercalated iron-pnictide superconductor Ba2Ti2Fe2As4O

The electronic structure of the intercalated iron-based superconductor Ba2Ti2Fe2As4O (Tc - 21.5 K) has been investigated by using angle-resolved photoemission spectroscopy and combined local density approximation and dynamical mean field theory calculations. The electronic states near the Fermi level are dominated by both the Fe 3d and Ti 3d orbitals, indicating that the spacing layers separating different FeAs layers are also metallic. By counting the enclosed volumes of the Fermi surface sheets, we observe a large self-doping effect, i.e. 0.25 electrons per unit cell are transferred from the FeAs layer to the Ti2As2O layer, leaving the FeAs layer in a hole-doped state. This exotic behavior is successfully reproduced by our dynamical mean field calculations, in which the self-doping effect is attributed to the electronic correlations in the Fe 3d shell. Our work provides an alternative route of effective doping without element substitution for iron-based superconductors.

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