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Tian-Long Xia

Tian-Long Xia contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2022arXiv

Critical behavior in the Mn$_{5}$Ge$_{3}$ ferromagnet

High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn$ _{5}$Ge$_{3}$ used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents $ β=0.336 \pm 0.001 $ with a critical temperature $ T_{c}=300.29 \pm 0.01 $ K and $ γ=1.193 \pm 0.003 $ with $ T_{c} = 300.15 \pm 0.05 $ K are obtained by the modified Arrott plot, whereas $ δ= 4.61 \pm 0.03 $ is deduced by a critical isotherm analysis at $ T_{c} = 300 $ K. The self-consistency and reliability of these critical exponents are verified by the Widom scaling law and the scaling equations. Further analysis reveals that the spin coupling in Mn$ _{5}$Ge$_{3}$ exhibits three-dimensional Ising-like behavior. The magnetic exchange is found to decay as $ J(r)\approx r^{-4.855} $ and the spin interactions are extended beyond the nearest neighbors, which may be related to different set of Mn--Mn interactions with unequal magnitude of exchange strengths. Additionally, the existence of noncollinear spin configurations in Mn$ _{5} $Ge$ _{3} $ results in a small deviation of obtained critical exponents from those for standard 3D-Ising model.

preprint2022arXiv

Large anomalous Hall effect in layered antiferromagnet Co$_{0.29}$TaS$_2$

We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co$_{0.29}$TaS$_{2}$ undergoes two transitions at T$_{t1}\sim$ 38.3 K and T$_{t2}\sim$ 24.3 K. Once the magnetic field is applied, another transition T$_{t3}\sim$ 34.3 K appears between 0.3 T and 5 T. At 2 K, an obvious ferromagnetic hysteresis loop within H$_{t1}\sim\pm$ 6.9 T is observed, which decreases with increasing temperature and eventually disappears at T$_{t2}$. Besides, Co$_{0.29}$TaS$_{2}$ displays step-like behavior as another magnetic transition around H$_{t2}\sim\pm$ 4 T, which exists until $\sim$ T$_{t1}$. These characteristic temperatures and magnetic fields mark complex magnetic phase transitions in Co$_{0.29}$TaS$_{2}$, which are also evidenced in transport results. Large AHE dominates in the Hall resistivity with the conspicuous value of R$_{s}$/R$_{0}\sim 10^{5}$, considering that the tiny net magnetization (0.0094$μ_{B}$/Co) alone would not lead to this value, thus the contribution of Berry curvature is necessary. The longitudinal resistivity illustrates a prominent irreversible behavior within H$_{t1}$. The abrupt change at H$_{t2}$ below T$_{t1}$, corresponding to the step-like magnetic transitions, is also observed. Synergy between the magnetism and topological properties, both playing a crucial role, may be the key factor of large AHE in antiferromagnet, which also offers a new perspective in magnetic topological materials with the platform of Co$_{0.29}$TaS$_{2}$.

preprint2021arXiv

Population inversion and Dirac fermion cooling in 3D Dirac semimetal Cd$_3$As$_2$

Revealing the ultrafast dynamics of three-dimensional (3D) Dirac fermions upon photoexcitation is critical for both fundamental science and device applications. So far, how the cooling of 3D Dirac fermions differs from that of two-dimensional (2D) Dirac fermions and whether there is population inversion are fundamental questions that remain to be answered. Here we reveal the ultrafast dynamics of Dirac fermions in a model 3D Dirac semimetal Cd$_3$As$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy (TrARPES) with a tunable probe photon energy from 5.3 - 6.9 eV. The energy- and momentum-resolved relaxation rate shows a linear dependence on the energy, suggesting Dirac fermion cooling through intraband relaxation. Moreover, a population inversion is reported based on the observation of accumulated photoexcited carriers in the conduction band with a lifetime of $τ_n$ = 3.0 ps. Our work provides direct experimental evidence for a long-lived population inversion in a 3D Dirac semimetal, which is in contrast to 2D graphene where the interband relaxation occurs on a much faster timescale.

preprint2020arXiv

Conductive Domain Walls in Non-Oxide Ferroelectrics Sn2P2S6

The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.

preprint2020arXiv

Tunable magnetic properties in van der Waals crystals (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$

We report the doping effects of cobalt on van der Waals (vdW) magnet Fe$_5$GeTe$_2$. A series of (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$ (0$\leq$x$\leq$0.44) single crystals have been successfully grown, their structural, magnetic and transport properties are investigated. For x=0.20, The Curie temperature $T_C$ increases from 276~K to 337~K. Moreover, the magnetic easy-axis is reoriented to the $ab$-plane from the $c$-axis in undoped Fe$_5$GeTe$_2$ with largely enhanced magnetic anisotropy. These magnetic properties would make (Fe$_{0.8}$Co$_{0.2}$)$_5$GeTe$_2$ more effective in stabilizing magnetic order in the two-dimensional limit. A complex magnetic phase diagram is identified on the higher doping side. The x=0.44 crystal first orders ferromagnetically at $T_C$=363~K then undergoes an antiferromagnetic transition at $T_N$=335~K. Furthermore magnetic-field-induced spin-flop transitions are observed for the AFM ground state. Our work reveals (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$ as promising candidates for developing new spin-related applications and proposes a method to engineer the magnetic properties of vdW magnet.

preprint2019arXiv

Domain wall pinning and hard magnetic phase in Co-doped bulk single crystalline Fe3GeTe2

We report the effects of cobalt doping on the magnetic properties of two-dimensional van der Waals ferromagnet Fe3GeTe2. Single crystals of (Fe{1-x}Cox)3GeTe2 with x=0-0.78 were successfully synthesized and characterized with x-ray diffraction, energy dispersive x-ray spectroscopy and magnetization measurements. Both the Curie-Weiss temperature and ferromagnetic (FM) ordered moment of Fe3GeTe2 are gradually suppressed upon Co doping. A kink in zero-field-cooling low field M(T) curve which is previously explained as an antiferromagnetic transition is observed for samples with x=0-0.58. Our detailed magnetization measurements and theoretical calculations strongly suggest that this kink is originated from the pinning of magnetic domain walls. The domain pinning effects are suddenly enhanced when the doping concentration of cobalt is around 50%, both the coercive field Hc and the magnetic remanence to saturated magnetization ratio MR/MS are largely improved and a hard magnetic phase emerges in bulk single crystal samples. The strong doping dependent magnetic properties suggest more spintronic applications of Fe3GeTe2.

preprint2019arXiv

Interlayer quantum transport in Dirac semimetal BaGa$_2$

Quantum limit is quite easy to achieve once the band crossing exists exactly at the Fermi level ($E_F$) in topological semimetals. In multilayered Dirac fermion system, the density of Dirac fermions on the zeroth Landau levels (LLs) increases in proportion to the magnetic field, resulting in intriguing angle- and field-dependent interlayer tunneling conductivity near the quantum limit. BaGa$_2$ is an example of multilayered Dirac semimetal with anisotropic Dirac cone close to $E_F$, providing a good platform to study its interlayer transport properties. In this paper, we report the negative interlayer magnetoresistance (NIMR, I//c and B//c) induced by the tunneling of Dirac fermions on the zeroth LLs of neighbouring Ga layers in BaGa$_2$. When the field deviates from the c-axis, the interlayer resistivity $ρ_{zz}(θ)$ increases and finally results in a peak with the field perpendicular to the c-axis. These unusual interlayer transport properties (NIMR and resistivity peak with B$\perp$c) are observed together for the first time in Dirac semimetal under ambient pressure and are well explained by the model of tunneling between Dirac fermions in the quantum limit.

preprint2019arXiv

Quantum oscillations and electronic structures in large Chern number semimetal RhSn

We report the magnetoresistance, Hall effect, de Haas-van Alphen (dHvA) oscillations and the electronic structures of single crystal RhSn, which is a typical material of CoSi family holding a large Chern number. The large unsaturated magnetoresistance is observed with B//[001]. The Hall resistivity curve indicates that RhSn is a multi-band system with high mobility. Evident quantum oscillations have been observed, from which the light effective masses are extracted. Ten fundamental frequencies are extracted after the fast Fourier transform analysis of the dHvA oscillations with B//[001] configuration. The two low frequencies F$_1$ and F$_2$ do not change obviously and the two high frequencies F$_9$ and F$_{10}$ evolve into four when B rotates from B//[001] to B//[110], which is consistent with the band structure in the first-principles calculations with spin-orbit coupling (SOC). The extracted Berry phases of the relative pockets show a good agreement with the Chern number $\pm4$ (with SOC) in the first-principles calculations. Above all, our studies indicate that RhSn is an ideal platform to study the unconventional chiral fermions and the surface states.