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Tian-Long Xia

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11works
4topics
4close collaborators

Published work

11 publications

preprint2022arXiv

Critical behavior in the Mn5_{5}Ge3_{3} ferromagnet

High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn5 _{5}Ge3_{3} used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents β=0.336±0.001 β=0.336 \pm 0.001 with a critical temperature Tc=300.29±0.01 T_{c}=300.29 \pm 0.01 K and γ=1.193±0.003 γ=1.193 \pm 0.003 with Tc=300.15±0.05 T_{c} = 300.15 \pm 0.05 K are obtained by the modified Arrott plot, whereas δ=4.61±0.03 δ= 4.61 \pm 0.03 is deduced by a critical isotherm analysis at Tc=300 T_{c} = 300 K. The self-consistency and reliability of these critical exponents are verified by the Widom scaling law and the scaling equations. Further analysis reveals that the spin coupling in Mn5 _{5}Ge3_{3} exhibits three-dimensional Ising-like behavior. The magnetic exchange is found to decay as J(r)≈r−4.855 J(r)\approx r^{-4.855} and the spin interactions are extended beyond the nearest neighbors, which may be related to different set of Mn--Mn interactions with unequal magnitude of exchange strengths. Additionally, the existence of noncollinear spin configurations in Mn5 _{5} Ge3 _{3} results in a small deviation of obtained critical exponents from those for standard 3D-Ising model.

preprint2022arXiv

Large anomalous Hall effect in layered antiferromagnet Co0.29_{0.29}TaS2_2

We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co0.29_{0.29}TaS2_{2}. Of particular interests in Co0.29_{0.29}TaS2_{2} are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co0.29_{0.29}TaS2_{2} undergoes two transitions at Tt1∼_{t1}\sim 38.3 K and Tt2∼_{t2}\sim 24.3 K. Once the magnetic field is applied, another transition Tt3∼_{t3}\sim 34.3 K appears between 0.3 T and 5 T. At 2 K, an obvious ferromagnetic hysteresis loop within Ht1∼±_{t1}\sim\pm 6.9 T is observed, which decreases with increasing temperature and eventually disappears at Tt2_{t2}. Besides, Co0.29_{0.29}TaS2_{2} displays step-like behavior as another magnetic transition around Ht2∼±_{t2}\sim\pm 4 T, which exists until ∼\sim Tt1_{t1}. These characteristic temperatures and magnetic fields mark complex magnetic phase transitions in Co0.29_{0.29}TaS2_{2}, which are also evidenced in transport results. Large AHE dominates in the Hall resistivity with the conspicuous value of Rs_{s}/R0∼105_{0}\sim 10^{5}, considering that the tiny net magnetization (0.0094μBμ_{B}/Co) alone would not lead to this value, thus the contribution of Berry curvature is necessary. The longitudinal resistivity illustrates a prominent irreversible behavior within Ht1_{t1}. The abrupt change at Ht2_{t2} below Tt1_{t1}, corresponding to the step-like magnetic transitions, is also observed. Synergy between the magnetism and topological properties, both playing a crucial role, may be the key factor of large AHE in antiferromagnet, which also offers a new perspective in magnetic topological materials with the platform of Co0.29_{0.29}TaS2_{2}.

preprint2021arXiv

Population inversion and Dirac fermion cooling in 3D Dirac semimetal Cd3_3As2_2

Revealing the ultrafast dynamics of three-dimensional (3D) Dirac fermions upon photoexcitation is critical for both fundamental science and device applications. So far, how the cooling of 3D Dirac fermions differs from that of two-dimensional (2D) Dirac fermions and whether there is population inversion are fundamental questions that remain to be answered. Here we reveal the ultrafast dynamics of Dirac fermions in a model 3D Dirac semimetal Cd3_3As2_2 by ultrafast time- and angle-resolved photoemission spectroscopy (TrARPES) with a tunable probe photon energy from 5.3 - 6.9 eV. The energy- and momentum-resolved relaxation rate shows a linear dependence on the energy, suggesting Dirac fermion cooling through intraband relaxation. Moreover, a population inversion is reported based on the observation of accumulated photoexcited carriers in the conduction band with a lifetime of τnτ_n = 3.0 ps. Our work provides direct experimental evidence for a long-lived population inversion in a 3D Dirac semimetal, which is in contrast to 2D graphene where the interband relaxation occurs on a much faster timescale.

preprint2020arXiv

Conductive Domain Walls in Non-Oxide Ferroelectrics Sn2P2S6

The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.

preprint2020arXiv

Tunable magnetic properties in van der Waals crystals (Fe1−x_{1-x}Cox_x)5_5GeTe2_2

We report the doping effects of cobalt on van der Waals (vdW) magnet Fe5_5GeTe2_2. A series of (Fe1−x_{1-x}Cox_x)5_5GeTe2_2 (0≤\leqx≤\leq0.44) single crystals have been successfully grown, their structural, magnetic and transport properties are investigated. For x=0.20, The Curie temperature TCT_C increases from 276~K to 337~K. Moreover, the magnetic easy-axis is reoriented to the abab-plane from the cc-axis in undoped Fe5_5GeTe2_2 with largely enhanced magnetic anisotropy. These magnetic properties would make (Fe0.8_{0.8}Co0.2_{0.2})5_5GeTe2_2 more effective in stabilizing magnetic order in the two-dimensional limit. A complex magnetic phase diagram is identified on the higher doping side. The x=0.44 crystal first orders ferromagnetically at TCT_C=363~K then undergoes an antiferromagnetic transition at TNT_N=335~K. Furthermore magnetic-field-induced spin-flop transitions are observed for the AFM ground state. Our work reveals (Fe1−x_{1-x}Cox_x)5_5GeTe2_2 as promising candidates for developing new spin-related applications and proposes a method to engineer the magnetic properties of vdW magnet.

preprint2019arXiv

Domain wall pinning and hard magnetic phase in Co-doped bulk single crystalline Fe3GeTe2

We report the effects of cobalt doping on the magnetic properties of two-dimensional van der Waals ferromagnet Fe3GeTe2. Single crystals of (Fe{1-x}Cox)3GeTe2 with x=0-0.78 were successfully synthesized and characterized with x-ray diffraction, energy dispersive x-ray spectroscopy and magnetization measurements. Both the Curie-Weiss temperature and ferromagnetic (FM) ordered moment of Fe3GeTe2 are gradually suppressed upon Co doping. A kink in zero-field-cooling low field M(T) curve which is previously explained as an antiferromagnetic transition is observed for samples with x=0-0.58. Our detailed magnetization measurements and theoretical calculations strongly suggest that this kink is originated from the pinning of magnetic domain walls. The domain pinning effects are suddenly enhanced when the doping concentration of cobalt is around 50%, both the coercive field Hc and the magnetic remanence to saturated magnetization ratio MR/MS are largely improved and a hard magnetic phase emerges in bulk single crystal samples. The strong doping dependent magnetic properties suggest more spintronic applications of Fe3GeTe2.

preprint2019arXiv

Interlayer quantum transport in Dirac semimetal BaGa2_2

Quantum limit is quite easy to achieve once the band crossing exists exactly at the Fermi level (EFE_F) in topological semimetals. In multilayered Dirac fermion system, the density of Dirac fermions on the zeroth Landau levels (LLs) increases in proportion to the magnetic field, resulting in intriguing angle- and field-dependent interlayer tunneling conductivity near the quantum limit. BaGa2_2 is an example of multilayered Dirac semimetal with anisotropic Dirac cone close to EFE_F, providing a good platform to study its interlayer transport properties. In this paper, we report the negative interlayer magnetoresistance (NIMR, I//c and B//c) induced by the tunneling of Dirac fermions on the zeroth LLs of neighbouring Ga layers in BaGa2_2. When the field deviates from the c-axis, the interlayer resistivity ρzz(θ)ρ_{zz}(θ) increases and finally results in a peak with the field perpendicular to the c-axis. These unusual interlayer transport properties (NIMR and resistivity peak with B⊥\perpc) are observed together for the first time in Dirac semimetal under ambient pressure and are well explained by the model of tunneling between Dirac fermions in the quantum limit.

preprint2019arXiv

Quantum oscillations and electronic structures in large Chern number semimetal RhSn

We report the magnetoresistance, Hall effect, de Haas-van Alphen (dHvA) oscillations and the electronic structures of single crystal RhSn, which is a typical material of CoSi family holding a large Chern number. The large unsaturated magnetoresistance is observed with B//[001]. The Hall resistivity curve indicates that RhSn is a multi-band system with high mobility. Evident quantum oscillations have been observed, from which the light effective masses are extracted. Ten fundamental frequencies are extracted after the fast Fourier transform analysis of the dHvA oscillations with B//[001] configuration. The two low frequencies F1_1 and F2_2 do not change obviously and the two high frequencies F9_9 and F10_{10} evolve into four when B rotates from B//[001] to B//[110], which is consistent with the band structure in the first-principles calculations with spin-orbit coupling (SOC). The extracted Berry phases of the relative pockets show a good agreement with the Chern number ±4\pm4 (with SOC) in the first-principles calculations. Above all, our studies indicate that RhSn is an ideal platform to study the unconventional chiral fermions and the surface states.

preprint2016arXiv

Fast synthesis of Fe1.1Se1-xTex superconductors in a self-heating and furnace-free way

A fast and furnace-free method of combustion synthesis is employed for the first time to synthesize iron-based superconductors. Using this method, Fe1.1Se1-xTex (0<=x<=1) samples can be prepared from self-sustained reactions of element powders in only tens of seconds. The obtained Fe1.1Se1-xTex samples show clear zero resistivity and corresponding magnetic susceptibility drop at around 10-14 K. The Fe1.1Se0.33Te0.67 sample shows the highest onset Tc of about 14 K, and its upper critical field is estimated to be approximately 54 T. Compared with conventional solid state reaction for preparing polycrystalline FeSe samples, combustion synthesis exhibits much-reduced time and energy consumption, but offers comparable superconducting properties. It is expected that the combustion synthesis method is available for preparing plenty of iron-based superconductors, and in this direction further related work is in progress.

preprint2016arXiv

Large linear magnetoresistance in a new Dirac material BaMnBi2

We report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. The Hall data reveals electron-type carriers and a mobility mu(5K) =1500cm2/Vs. The temperature dependence of magnetization displays behavior that is different from CaMnBi2 or SrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2. Angle-dependent magnetoresistance reveals the quasi-two-dimensional Fermi surface. A crossover from semiclassical MR-H2 dependence in low field to MR-H dependence in high field is observed in transverse magnetoresistance. Our results indicate the anisotropic Dirac fermion states in BaMnBi2.

preprint2016arXiv

Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2

In topological insulators (TIs), metallic surface conductance saturates the insulating bulk resistance with de- creasing temperature, resulting in resistivity plateau at low temperatures as a transport signature originating from metallic surface modes protected by time reversal symmetry (TRS). Such characteristic has been found in several materials including Bi2Te2Se, SmB6 etc. Recently, similar behavior has been observed in metallic com- pound LaSb, accompanying an extremely large magetoresistance (XMR). Shubnikov-de Hass (SdH) oscillation at low temperatures further confirms the metallic behavior of plateau region under magnetic fields. LaSb[1] has been proposed by the authors as a possible topological semimetal (TSM), while negative magnetoresistance is absent at this moment. Here, high quality single crystals of NbAs2/TaAs2 with inversion symmetry have been grown and the resistivity under magnetic field is systematically investigated. Both of them exhibit metallic behavior under zero magnetic field, and a metal-to-insulator transition occurs when a nonzero magnetic field is applied, resulting in XMR (1.0*105% for NbAs2 and 7.3*105% for TaAs2 at 2.5 K & 14 T). With tempera- ture decreased, a resistivity plateau emerges after the insulator-like regime and SdH oscillation has also been observed in NbAs2 and TaAs2.

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