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Thomas Kent

Thomas Kent contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Ensuring 'well-balanced' shallow water flows via a discontinuous Galerkin finite element method: issues at lowest order

The discontinuous Galerkin finite element method (DGFEM) developed by Rhebergen et al. (2008) offers a robust method for solving systems of nonconservative hyperbolic partial differential equations but, as we show here, does not satisfactorily deal with topography in shallow water flows at lowest order (so-called DG0, or equivalently finite volume). In particular, numerical solutions of the space-DG0 discretised one-dimensional shallow water equations over varying topography are not truly `well-balanced'. A numerical scheme is well-balanced if trivial steady states are satisfied in the numerical solution; in the case of the shallow water equations, initialised rest flow should remain at rest for all times. Whilst the free-surface height and momentum remain constant and zero, respectively, suggesting that the scheme is indeed well-balanced, the fluid depth and topography evolve in time. This is both undesirable and unphysical, leading to incorrect numerical solutions for the fluid depth, and is thus a concern from a predictive modelling perspective. We expose this unsatisfactory issue, both analytically and numerically, and indicate a solution that combines the DGFEM formulation for nonconservative products with a fast and stable well-balanced finite-volume method. This combined scheme bypasses the offending issue and successfully integrates nonconservative hyperbolic shallow water-type models with varying topography at lowest order. We briefly discuss implications for the definition of a well-balanced scheme, and highlight applications when higher-order schemes may not be desired, which give further value to our finding beyond its exposure alone.

preprint2013arXiv

GdN Nanoisland-Based GaN Tunnel Junctions

We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 Ω-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN over GdN nanoislands to create new nanoscale heterostructure designs that are not feasible in planar epitaxy. GdN nanoisland assisted inter-band tunneling was found to enhance tunneling in both of the polar orientations of GaN. Tunnel injection of holes was confirmed by low temperature operation of GaN p-n junction with a tunneling contact layer, showing strong electroluminescence down to 20K. The availability of tunnel junctions with negligible absorption could not only improve the efficiency of existing optoelectronic devices significantly, but also enable new electronic and optical devices based on wide band gap materials.