Source author record

Thomas Aktor

Thomas Aktor appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
1topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2021arXiv

Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene

We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering.

preprint2016arXiv

Electronic transport in graphene nanoribbons with sublattice-asymmetric doping

Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate theoretically that such distributions give rise to more complex behaviour in the presence of edges, where geometry determines whether electrons in the sample view the impurities as a gap-opening average potential or as scatterers. Zigzag edges give rise to the latter case, and remove the electronic bandgaps predicted in extended graphene samples. We predict that such behaviour will give rise to leakage near grain boundaries with a similar geometry or in zigzag-edged etched devices. Furthermore, we examine the formation of one-dimensional metallic channels at interfaces between different sublattice domains, which should be observable experimentally and offer intriguing waveguiding possibilities.