Researcher profile

Stephen R. Power

Stephen R. Power contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Predicting magnetic edge behaviour in graphene using neural networks

Magnetic moments near zigzag edges in graphene allow complex nanostructures with customised spin properties to be realised. However, computational costs restrict theoretical investigations to small or perfectly periodic structures. Here we demonstrate that a machine-learning approach, using only geometric input, can accurately estimate magnetic moment profiles, allowing arbitrarily large and disordered systems to be quickly simulated. Excellent agreement is found with mean-field Hubbard calculations, and important electronic, magnetic and transport properties are reproduced using the estimated profiles. This approach allows the magnetic moments of experimental-scale systems to be quickly and accurately predicted, and will speed-up the identification of promising geometries for spintronic applications. While machine-learning approaches to many-body interactions have largely been limited to exact solutions of complex models at very small scales, this work establishes that they can be successfully applied at very large scales at mean-field levels of accuracy.

preprint2021arXiv

Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene

We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering.

preprint2020arXiv

Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport

Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the ballistic regime as well as the limit of long spin diffusion length. We show that the latter can be described by an extension of the current theoretical framework. Finally, by covering the whole range of spin dynamics, our study opens a new perspective to predict and scrutinize spin transport in graphene and other two-dimensional material-based ultraclean devices.