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Stephen R. Power

Stephen R. Power appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

17 published item(s)

preprint2022arXiv

Predicting magnetic edge behaviour in graphene using neural networks

Magnetic moments near zigzag edges in graphene allow complex nanostructures with customised spin properties to be realised. However, computational costs restrict theoretical investigations to small or perfectly periodic structures. Here we demonstrate that a machine-learning approach, using only geometric input, can accurately estimate magnetic moment profiles, allowing arbitrarily large and disordered systems to be quickly simulated. Excellent agreement is found with mean-field Hubbard calculations, and important electronic, magnetic and transport properties are reproduced using the estimated profiles. This approach allows the magnetic moments of experimental-scale systems to be quickly and accurately predicted, and will speed-up the identification of promising geometries for spintronic applications. While machine-learning approaches to many-body interactions have largely been limited to exact solutions of complex models at very small scales, this work establishes that they can be successfully applied at very large scales at mean-field levels of accuracy.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene

We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport

Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the ballistic regime as well as the limit of long spin diffusion length. We show that the latter can be described by an extension of the current theoretical framework. Finally, by covering the whole range of spin dynamics, our study opens a new perspective to predict and scrutinize spin transport in graphene and other two-dimensional material-based ultraclean devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electron interference in ballistic graphene nanoconstrictions

We have realized nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot like resonances were probed by in-situ transport measurements at various temperatures. The energies of the resonances are determined by the size of the constrictions which can be controlled precisely using STM lithography. The temperature and size dependence of the measured conductances are in quantitative agreement with tight-binding calculations. The fact that these interference effects are visible even at room temperature makes the reported devices attractive as building blocks for future carbon based electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electronic transport in graphene nanoribbons with sublattice-asymmetric doping

Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate theoretically that such distributions give rise to more complex behaviour in the presence of edges, where geometry determines whether electrons in the sample view the impurities as a gap-opening average potential or as scatterers. Zigzag edges give rise to the latter case, and remove the electronic bandgaps predicted in extended graphene samples. We predict that such behaviour will give rise to leakage near grain boundaries with a similar geometry or in zigzag-edged etched devices. Furthermore, we examine the formation of one-dimensional metallic channels at interfaces between different sublattice domains, which should be observable experimentally and offer intriguing waveguiding possibilities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust band gap and half-metallicity in graphene with triangular perforations

Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., $E_G\simeq 500$ meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g, by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy, reducing the band gaps compared to the unpolarized case. This behavior is also found to be robust in the presence of disorder. Our results highlight the possibilities of using triangular perforations in graphene to open electronic band gaps in systems with experimentally realistic levels of disorder, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Bubbles in graphene - a computational study

Strain-induced deformations in graphene are predicted to give rise to large pseudomagnetic fields. We examine theoretically the case of gas-inflated bubbles to determine whether signatures of such fields are present in the local density of states. Sharp-edged bubbles are found to induce Friedel-type oscillations which can envelope pseudo-Landau level features in certain regions of the bubble. However, bubbles which minimise interference effects are also unsuitable for pseudo-Landau level formation due to more spatially varying field profiles.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene on graphene antidot lattices: Electronic and transport properties

Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a novel bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with the perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Patched Green's function techniques for two dimensional systems: Electronic behaviour of bubbles and perforations in graphene

We present a numerically efficient technique to evaluate the Green's function for extended two dimensional systems without relying on periodic boundary conditions. Different regions of interest, or `patches', are connected using self energy terms which encode the information of the extended parts of the system. The calculation scheme uses a combination of analytic expressions for the Green's function of infinite pristine systems and an adaptive recursive Green's function technique for the patches. The method allows for an efficient calculation of both local electronic and transport properties, as well as the inclusion of multiple probes in arbitrary geometries embedded in extended samples. We apply the Patched Green's function method to evaluate the local densities of states and transmission properties of graphene systems with two kinds of deviations from the pristine structure: bubbles and perforations with characteristic dimensions of the order of 10-25 nm, i.e. including hundreds of thousands of atoms. The strain field induced by a bubble is treated beyond an effective Dirac model, and we demonstrate the existence of both Friedel-type oscillations arising from the edges of the bubble, as well as pseudo-Landau levels related to the pseudomagnetic field induced by the nonuniform strain. Secondly, we compute the transport properties of a large perforation with atomic positions extracted from a TEM image, and show that current vortices may form near the zigzag segments of the perforation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Pseudomagnetic fields and triaxial strain in graphene

Strain fields in graphene giving rise to pseudomagnetic fields have received much attention due to the possibility of mimicking real magnetic fields with magnitudes of greater than 100 Tesla. We examine systems with such strains confined to finite regions ("pseudomagnetic dots") and provide a transparent explanation for the characteristic sublattice polarization occurring in the presence of pseudomagnetic field. In particular, we focus on a triaxial strain leading to a constant field in the central region of the dot. This field causes the formation of pseudo Landau levels, where the zeroth order level shows significant differences compared to the corresponding level in a real magnetic field. Analytic arguments based on the Dirac model are employed to predict the sublattice and valley dependencies of the density of states in these systems. Numerical tight binding calculations of single pseudomagnetic dots in extended graphene sheets confirm these predictions, and are also used to study the effect of the rotating the strain direction and varying the size of the pseudomagnetic dot.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dual-probe spectroscopic fingerprints of defects in graphene

Recent advances in experimental techniques emphasize the usefulness of multiple scanning probe techniques when analyzing nanoscale samples. Here, we analyze theoretically dual-probe setups with probe separations in the nanometer range, i.e., in a regime where quantum coherence effects can be observed at low temperatures. In a dual-probe setup the electrons are injected at one probe and collected at the other. The measured conductance reflects the local transport properties on the nanoscale, thereby yielding information complementary to that obtained with a standard one-probe setup (the local density-of-states). In this work we develop a real space Green's function method to compute the conductance. This requires an extension of the standard calculation schemes, which typically address a finite sample between the probes. In contrast, the developed method makes no assumption on the sample size (e.g., an extended graphene sheet). Applying this method, we study the transport anisotropies in pristine graphene sheets, and analyze the spectroscopic fingerprints arising from quantum interference around single-site defects, such as vacancies and adatoms. Furthermore, we demonstrate that the dual-probe setup is a useful tool for characterizing the electronic transport properties of extended defects or designed nanostructures. In particular, we show that nanoscale perforations, or antidots, in a graphene sheet display Fano-type resonances with a strong dependence on the edge geometry of the perforation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic transport in disordered graphene antidot lattice devices

Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems have been investigated with a view towards application in transistor or waveguiding devices. The desired properties have been predicted for atomically precise systems, but fabrication methods will introduce significant levels of disorder in the shape, position and edge configurations of individual antidots. We calculate the electronic transport properties of a wide range of finite graphene antidot devices to determine the effect of such disorders on their performance. Modest geometric disorder is seen to have a detrimental effect on devices containing small, tightly packed antidots, which have optimal performance in pristine lattices. Larger antidots display a range of effects which strongly depend on their edge geometry. Antidot systems with armchair edges are seen to have a far more robust transport gap than those composed from zigzag or mixed edge antidots. The role of disorder in waveguide geometries is slightly different and can enhance performance by extending the energy range over which waveguiding behavior is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

RKKY interaction between extended magnetic defect lines in graphene

Of fundamental interest in the field of spintronics is the mechanism of indirect exchange coupling between magnetic impurities embedded in metallic hosts. A range of physical features, such as magnetotransport and overall magnetic moment formation, are predicated upon this magnetic coupling, often referred to as the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. Recent theoretical studies on the RKKY in graphene have been motivated by possible spintronic applications of magnetically doped graphene systems. In this work a combination of analytic and numerical techniques are used to examine the effects of defect dimensionality on such an interaction. We show, in a mathematically transparent manner, that moving from single magnetic impurities to extended lines of impurities effectively reduces the dimensionality of the system and increases the range of the interaction. This has important consequences for the spintronic application of magnetically-doped and we illustrate this with a simple magnetoresistance device.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Sublattice imbalance of substitutionally doped nitrogen in graphene

Motivated by the recently observed sublattice asymmetry of substitutional nitrogen impurities in CVD grown graphene, we show, in a mathematically transparent manner, that oscillations in the local density of states driven by the presence of substitutional impurities are responsible for breaking the sublattice symmetry. While these oscillations are normally averaged out in the case of randomly dispersed impurities, in graphene they have either the same, or very nearly the same, periodicity as the lattice. As a result, the total interaction energy of randomly distributed impurities embedded in the conduction-electron-filled medium does not vanish and is lowered when their configuration is sublattice-asymmetric. We also identify the presence of a critical concentration of nitrogen above which one should expect the sublattice asymmetry to disappear. This feature is not particular to nitrogen dopants, but should be present in other impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Theoretical analysis of a dual-probe scanning tunneling microscope setup on graphene

Experimental advances allow for the inclusion of multiple probes to measure the transport properties of a sample surface. We develop a theory of dual-probe scanning tunnelling microscopy using a Green's Function formalism, and apply it to graphene. Sampling the local conduction properties at finite length scales yields real space conductance maps which show anisotropy for pristine graphene systems and quantum interference effects in the presence of isolated impurities. The spectral signatures of the Fourier transform of real space conductance maps include characteristics that can be related to different scattering processes. We compute the conductance maps of graphene systems with different edge geometries or height fluctuations to determine the effects of non-ideal graphene samples on dual-probe measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Friedel Oscillations in Graphene: Sublattice Asymmetry in Doping

Symmetry breaking perturbations in an electronically conducting medium are known to produce Friedel oscillations (FOs) in various physical quantities of an otherwise pristine material. Here we show in a mathematically transparent fashion that FOs in graphene have a strong sublattice asymmetry. As a result, the presence of impurities and/or defects may impact the distinct graphene sublattices very differently. Furthermore, such an asymmetry an be used to explain the recent observations that Nitrogen atoms and dimers are not randomly distributed in graphene but prefer to occupy one of its two distinct sublattices. We argue that this feature is not exclusive of Nitrogen and that it can be seen with other substitutional dopants.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Indirect Exchange and Ruderman-Kittel-Kasuya-Yosida (RKKY) Interactions in Magnetically-Doped Graphene

Magnetically-doped graphene systems are potential candidates for application in future spintronic devices. A key step is to understand the pairwise interactions between magnetic impurities embedded in graphene that are mediated by the graphene conduction electrons. A large number of studies have been undertaken to investigate the indirect exchange, or RKKY, interactions in graphene. Many of these studies report a decay rate faster than expected for a 2-dimensional material and the absence of the usual distance dependent oscillations. In this review we summarize the techniques used to calculate the interaction and present the key results obtained to date. The effects of more detailed parameterisations of the magnetic impurities and graphene host are considered, as are results obtained from ab initio calculations. Since the fast decay of the interaction presents an obstacle to spintronic applications, we focus in particular on the possibility of augmenting the interaction range by a number of methods including doping, spin precession and the application of strain.

0 citations0 reviewsNo code linkedOpen access