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Source author record

Thiti Taychatanapat

Thiti Taychatanapat appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

9 published item(s)

preprint2016arXiv

Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene

We report on magneto-transport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the twelve-fold degeneracy of the zeroth Landau level. As a function of perpendicular electric field, our data exhibits a sequence of phase transitions between all integer quantum Hall states in the filling factor interval $-8<ν<0$. We develop a theoretical model and argue that, in contrast to monolayer and bilayer graphene, the observed Landau level splittings and quantum Hall phase transitions can be understood within a single-particle picture, but imply the presence of a charge density imbalance between the inner and outer layers of TLG, even at charge neutrality and zero transverse electric field. Our results indicate the importance of a previously unaccounted band structure parameter which, together with a more accurate estimate of the other tight-binding parameters, results in a significantly improved determination of the electronic and Landau level structure of TLG.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Conductance oscillations induced by ballistic snake states in a graphene heterojunction

The realization of p-n junctions in graphene, combined with the gapless and chiral nature of its massless Dirac fermions has led to the observation of many intriguing phenomena such as quantum Hall effect in bipolar regime, Klein tunneling, and Fabry-Pérot interferences all of which involve electronic transport across p-n junctions. Ballistic snake states propagating along the p-n junctions have been predicted to induce conductance oscillations, manifesting their twisting nature. However, transport studies along p-n junctions have so far only been performed in low mobility devices. Here, we report the observation of conductance oscillations due to ballistic snake states along a p-n interface in high quality graphene encapsulated by hexagonal boron nitride. These snake states are exceptionally robust as they can propagate over $12$~$μ$m, limited only by the size of our sample, and survive up to at least $120$~K. The ability to guide carriers over a long distance provide a crucial building block for graphene-based electron optics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-Orbit Proximity Effect in Graphene

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing material for spintronics studies, modulation of spin currents by gate field is almost impossible due to negligibly small intrinsic spin orbit coupling (SOC) of graphene. In this work, we create an artificial interface between monolayer graphene and few-layers semiconducting tungsten disulfide (WS2). We show that in such devices graphene acquires a SOC as high as 17meV, three orders of magnitude higher than its intrinsic value, without modifying any of the structural properties of the graphene. Such proximity SOC leads to the spin Hall effect even at room temperature and opens the doors for spin FETs. We show that intrinsic defects in WS2 play an important role in this proximity effect and that graphene can act as a probe to detect defects in semiconducting surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrically tunable transverse magnetic focusing in graphene

Electrons in a periodic lattice can propagate without scattering for macroscopic distances despite the presence of the non-uniform Coulomb potential due to the nuclei. Such ballistic motion of electrons allows the use of a transverse magnetic field to focus electrons. This phenomenon, known as transverse magnetic focusing (TMF), has been used to study the Fermi surface of metals and semiconductor heterostructures, as well as to investigate Andreev reflection, spin-orbit interaction, and to detect composite fermions. Here we report on the experimental observation of transverse magnetic focusing in high mobility mono-, bi-, and tri-layer graphene devices. The ability to tune the graphene carrier density enables us for the first time to investigate TMF continuously from the hole to the electron regime and analyze the resulting focusing fan. Moreover, by applying a transverse electric field to tri-layer graphene, we use TMF as a ballistic electron spectroscopy method to investigate controlled changes in the electronic structure of a material. Finally, we demonstrate that TMF survives in graphene up to 300 K, by far the highest temperature reported for any system, opening the door to novel room temperature applications based on electron-optics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

BN/Graphene/BN Transistors for RF Applications

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-off frequency fT=33 GHz and an fT.LG product of 15 GHz.um. The improved performance obtained by the BN/Graphene/BN structure is very promising to enable the next generation of high frequency graphene RF electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that non-local hot-carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This novel regime, which features a long-lived and spatially distributed hot carrier population, may open the doorway for optoelectronic technologies exploiting efficient energy transport at the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene

We investigate electronic transport in high mobility (\textgreater 100,000 cm$^2$/V$\cdot$s) trilayer graphene devices on hexagonal boron nitride, which enables the observation of Shubnikov-de Haas oscillations and an unconventional quantum Hall effect. The massless and massive characters of the TLG subbands lead to a set of Landau level crossings, whose magnetic field and filling factor coordinates enable the direct determination of the Slonczewski-Weiss-McClure (SWMcC) parameters used to describe the peculiar electronic structure of trilayer graphene. Moreover, at high magnetic fields, the degenerate crossing points split into manifolds indicating the existence of broken-symmetry quantum Hall states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum Hall Effect, Screening and Layer-Polarized Insulating States in Twisted Bilayer Graphene

We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite inter-layer screening and extract the capacitance between the atomically-spaced layers. At zero filling factor, we observe magnetic and displacement field dependent insulating states, which indicate the presence of counter-propagating edge states with inter-layer coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong non-linear behavior in the transport characteristics. The effective transport gap is typically two orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.

0 citations0 reviewsNo code linkedOpen access