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Teng Yang

Teng Yang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sciComputer Visioncond-mat.mes-hallphysics.comp-ph

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Published work

8 published item(s)

preprint2022arXiv

First-principles calculations of double resonance Raman spectra for monolayer MoTe$_2$

Since double resonance Raman (DRR) spectra are laser-energy dependent, the first-principles calculations of DRR for two-dimensional materials are challenging. Here, the DRR spectrum of monolayer MoTe$_2$ is calculated by home-made program, in which we combine {\em ab-initio} density-functional-theory calculations with the electron-phonon Wannier (EPW) method. Within the fourth-order perturbation theory, we are able to quantify not only the electron-photon matrix elements within the dipole approximation, but also the electron-phonon matrix elements using the Wannier functions. The reasonable agreement between the calculated and experimental Raman spectra is achieved, in which we reproduce some distinctive features of transition metal dichalcogenides (TMDCs) from graphene (for example, the dominant intervalley process involving an electron or a hole). Furthermore, we perform an analysis of the possible DRR modes over the Brillouin zone, highlighting the role of low-symmetry points. Raman tensors for some DRR modes are given by first principles calculations from which laser polarization dependence is obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$

Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been unravelled in 2D electronic systems with spin long-range orderings, the scarcely reported room temperature magnetic vdW material has thus far hindered the related applications. Here, we show that intrinsic ferromagnetically aligned spin polarization can hold up to 316 K in a metallic phase of 1$T$-CrTe$_{2}$ in the few-layer limit. This room temperature 2D long range spin interaction may be beneficial from an itinerant enhancement. Spin transport measurements indicate an in-plane room temperature negative anisotropic magnetoresistance (AMR) in few-layered CrTe$_{2}$, but a sign change in the AMR at lower temperature, with -0.6$\%$ at 300 K and +5$\%$ at 10 K, respectively. This behavior may originate from the specific spin polarized band structure of CrTe$_{2}$. Our findings provide insights into magnetism in few-layered CrTe$_{2}$, suggesting potential for future room temperature spintronic applications of such 2D vdW magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Double resonance Raman modes in mono- and few-layer MoTe$_2$

We study the second-order Raman process of mono- and few-layer MoTe$_2$, by combining {\em ab initio} density functional perturbation calculations with experimental Raman spectroscopy using 532, 633 and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the electron-photon resonance process occurs at the high-symmetry M point in the Brillouin zone, where a strong optical absorption occurs by a logarithmic Van-Hove singularity. Double resonance Raman scattering with inter-valley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M point phonons. The predicted frequencies of the second-order Raman peaks agree with the observed peak positions that cannot be assigned in terms of a first-order process. Our study attempts to supply a basic understanding of the second-order Raman process occurring in transition metal di-chalcogenides (TMDs) and may provide additional information both on the lattice dynamics and optical processes especially for TMDs with small energy band gaps such as MoTe$_2$ or at high laser excitation energy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A Deep Graph Embedding Network Model for Face Recognition

In this paper, we propose a new deep learning network "GENet", it combines the multi-layer network architec- ture and graph embedding framework. Firstly, we use simplest unsupervised learning PCA/LDA as first layer to generate the low- level feature. Secondly, many cascaded dimensionality reduction layers based on graph embedding framework are applied to GENet. Finally, a linear SVM classifier is used to classify dimension-reduced features. The experiments indicate that higher classification accuracy can be obtained by this algorithm on the CMU-PIE, ORL, Extended Yale B dataset.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Microwave-driven Topological Resonant Excitations of Coupled Skyrmions

We study nonlinear dynamics of coupled Skyrmions and present a method for manipulating topological resonant excitations by a dual-frequency microwave field. Thiele's equation is extended by introducing a new effective mass associated with time derivative of topological density. Two coupled resonant modes endowed with the new effective mass are found in the coupled Skyrmions. Polygon-like resonant excitations are observed and modulated when the two modes are activated simultaneously by microwave field with commensurate frequency ratio. Quasiperiodic behavior of excitations are related to an incommensurate ratio. Numerical solutions based on the extended Thiele's equation for Skyrmion under a dual-frequency field agree well with the micromagnetic simulation results and clarify the importance of frequency value, frequency ratio of an external field and the effective mass to the polygon-like dynamics of Skyrmion. We also show the coupling between two Skyrmions can dominate their topological resonant excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strain-induced magnetism in MoS2 monolayer with defects

The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2muB per vacancy defect. The straininduced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS2.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Skyrmion ground state and gyration of skyrmions in magnetic nanodisks without the Dzyaloshinsky-Moriya interaction

We show by micromagnetic simulations that spontaneous skyrmion ground state can exist in Co/Ru/Co nanodisks without the Dzyaloshinsky-Moriya interaction (DMI), which can remain stable in the applied magnetic field along +z direction even up to 0.44 T. The guiding center ($R_x$,$R_y$) of skyrmion defined by the moments of the topological density presents a novel gyration with a star-like trajectory in a pulsed magnetic field and a hexagonal trajectory after the field is switched off, which is different from that of vortex or bubble. One of the coupled skyrmions could move without an external magnetic field, but only induced by the motion of the other one due to strong inter-layer magnetostatic interactions. This work sheds light on how novel skyrmions can be discovered in various (not limited to magnetic) systems with competing energies and contributes to the understanding of the dynamical properties of skyrmion.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High pressure effect on structure, electronic structure and thermoelectric properties of MoS$_2$

We systematically study the effect of high pressure on the structure, electronic structure and transport properties of 2H-MoS$_2$, based on first-principles density functional calculations and the Boltzmann transport theory. Our calculation shows a vanishing anisotropy in the rate of structural change at around 25 GPa, in agreement with the experimental data. A conversion from van der Waals(vdW) to covalent-like bonding is seen. Concurrently, a transition from semiconductor to metal occurs at 25 GPa from band structure calculation. Our transport calculations also find pressure-enhanced electrical conductivities and significant values of the thermoelectric figure of merit over a wide temperature range. Our study supplies a new route to improve the thermoelectric performance of MoS$_2$ and of other transition metal dichalcogenides by applying hydrostatic pressure.

0 citations0 reviewsNo code linkedOpen access