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Huaihong Guo

Huaihong Guo contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci physics.comp-ph

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preprint2022arXiv

First-principles calculations of double resonance Raman spectra for monolayer MoTe$_2$

Since double resonance Raman (DRR) spectra are laser-energy dependent, the first-principles calculations of DRR for two-dimensional materials are challenging. Here, the DRR spectrum of monolayer MoTe$_2$ is calculated by home-made program, in which we combine {\em ab-initio} density-functional-theory calculations with the electron-phonon Wannier (EPW) method. Within the fourth-order perturbation theory, we are able to quantify not only the electron-photon matrix elements within the dipole approximation, but also the electron-phonon matrix elements using the Wannier functions. The reasonable agreement between the calculated and experimental Raman spectra is achieved, in which we reproduce some distinctive features of transition metal dichalcogenides (TMDCs) from graphene (for example, the dominant intervalley process involving an electron or a hole). Furthermore, we perform an analysis of the possible DRR modes over the Brillouin zone, highlighting the role of low-symmetry points. Raman tensors for some DRR modes are given by first principles calculations from which laser polarization dependence is obtained.

preprint2015arXiv

Double resonance Raman modes in mono- and few-layer MoTe$_2$

We study the second-order Raman process of mono- and few-layer MoTe$_2$, by combining {\em ab initio} density functional perturbation calculations with experimental Raman spectroscopy using 532, 633 and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the electron-photon resonance process occurs at the high-symmetry M point in the Brillouin zone, where a strong optical absorption occurs by a logarithmic Van-Hove singularity. Double resonance Raman scattering with inter-valley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M point phonons. The predicted frequencies of the second-order Raman peaks agree with the observed peak positions that cannot be assigned in terms of a first-order process. Our study attempts to supply a basic understanding of the second-order Raman process occurring in transition metal di-chalcogenides (TMDs) and may provide additional information both on the lattice dynamics and optical processes especially for TMDs with small energy band gaps such as MoTe$_2$ or at high laser excitation energy.

preprint2014arXiv

Strain-induced magnetism in MoS2 monolayer with defects

The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2muB per vacancy defect. The straininduced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS2.

preprint2012arXiv

High pressure effect on structure, electronic structure and thermoelectric properties of MoS$_2$

We systematically study the effect of high pressure on the structure, electronic structure and transport properties of 2H-MoS$_2$, based on first-principles density functional calculations and the Boltzmann transport theory. Our calculation shows a vanishing anisotropy in the rate of structural change at around 25 GPa, in agreement with the experimental data. A conversion from van der Waals(vdW) to covalent-like bonding is seen. Concurrently, a transition from semiconductor to metal occurs at 25 GPa from band structure calculation. Our transport calculations also find pressure-enhanced electrical conductivities and significant values of the thermoelectric figure of merit over a wide temperature range. Our study supplies a new route to improve the thermoelectric performance of MoS$_2$ and of other transition metal dichalcogenides by applying hydrostatic pressure.