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Teck Seng Koh

Teck Seng Koh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-ph

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Published work

12 published item(s)

preprint2026arXiv

Non-Markovian and Thermodynamic Signatures in the Classicality Assessment via Kolmogorov Consistency

The Kolmogorov consistency condition (KCC) defines the statistical boundary between classical and quantum dynamics. Its violation signifies the breakdown of a classical Markov description of temporal correlations. In this work, we establish a direct analytical connection between KCC violation and non-Markovianity in open quantum dynamics, revealing how memory effects manifest as departures from classical probabilistic consistency. Within a generic two-level open quantum system framework, we establish quantitative connections between the magnitude of KCC violation and key information-theoretic and thermodynamic quantities, such as mutual information, the Fano factor, heat exchange, and entropy production rate, thereby enabling a thermodynamic interpretation of temporal quantum correlations. Furthermore, we uncover formal correspondences between KCC violation, the Leggett-Garg inequality, and the negativity of the Kirkwood-Dirac quasi-distribution, identifying them as complementary witnesses of temporal quantum non-classicality. Our results thus provide a unified framework linking information-theoretic, thermodynamic, and temporal indicators of quantumness in open quantum systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

2022 Roadmap for Materials for Quantum Technologies

Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Characterizing gate operations near the sweet spot of an exchange-only qubit

Optimal working points or "sweet spots" have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal system for studying this effect because $Z$ rotations are performed directly at the sweet spot, while $X$ rotations are not. Here for the first time we quantify the ability of the sweet spot to mitigate charge noise by treating $X$ and $Z$ rotations on an equal footing. Specifically, we optimize $X$ rotations and determine an upper bound on their fidelity. We find that sweet spots offer a fidelity improvement factor of at least 20 for typical GaAs devices, and more for Si devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Further, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins, or the addition of a third quantum dot. Here we demonstrate a new qubit that offers both simplicity - it requires no special preparation and lives in a double quantum dot with no added complexity - and is very fast: we demonstrate full control on the Bloch sphere with $π$-rotation times less than 100 ps in two orthogonal directions. We report full process tomography, extracting high fidelities equal to or greater than 85% for X-rotations and 94% for Z-rotations. We discuss a path forward to fidelities better than the threshold for quantum error correction.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coherent Quantum Oscillations in a Silicon Charge Qubit

Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fast coherent manipulation of three-electron states in a double quantum dot

A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on a system with more electrons per quantum dot, in a double dot with three electrons. We demonstrate that tailored pulse sequences can be used to induce coherent rotations between 3-electron quantum states. Certain pulse sequences yield coherent oscillations with a very high figure of merit (the ratio of coherence time to rotation time) of >100. The presence of the third electron enables very fast rotations to all possible states, in contrast to the case when only two electrons are used, in which some rotations are slow. The minimum oscillation frequency we observe is >5 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High-fidelity gates in quantum dot spin qubits

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet (ST) and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance (LQR), and a gate-like process known as stimulated Raman adiabatic passage (STIRAP). These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling $g$ and the detuning $ε$, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity ($f$) for fixed $g$ as a function of the other control parameters; this yields an $f^\text{opt}(g)$ that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound $f^\text{max}$ that is specific to the qubit-gate combination. We show that similar gate fidelities ($ \sim 99.5$%) should be attainable for ST qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields $ΔB$ produced by nuclear spins.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Pulse-gated quantum dot hybrid qubit

A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level crossings in a pulsed gating scheme, which decomposes the spin qubit into a series of charge transitions. We develop one and two-qubit dc quantum gates that are simpler than the previously proposed ac gates. We obtain closed form solutions for the control sequences and show that these sub-nanosecond gates can achieve high fidelities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A fast "hybrid" silicon double quantum dot qubit

We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occupied dot. The architecture is relatively simple to fabricate, a universal set of fast operations can be implemented electrically, and the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot

Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tunable spin-selective loading of a silicon spin qubit

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.

0 citations0 reviewsNo code linkedOpen access