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Tathagata Paul

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

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preprint2020arXiv

Gate-controllable electronic trap detection in dielectrics

Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than 10 micro-seconds due to injection or ejection of electrons through the metal gate. Using this method, an electronic trap energy distribution was measured in the HfO2 dielectric film and it confirms a maximum number of traps (Delta_NT) of 1.7x1012 cm-2 corresponding to an energy level (Delta_EIL) of 0.45 eV above silicon conduction band (Si-ECB). In comparison, ZrO2-based MIS devices showed a broader distribution of electronic traps throughout the band gap. However, HfO2 contained more than 60% traps in deep level compared to 50% in ZrO2, which establishes the effects of material variation.

preprint2015arXiv

Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature

We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultra-thin WSe2 and MoS2 FETs on insulating SiO2 substrates, where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in random resistor network, particularly in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry or carrier mobility, which can be extended to other classes of 2D material-based devices as well.