Researcher profile

Taro Fukuyama

Taro Fukuyama contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Fine-pitch semiconductor detector for the FOXSI mission

The Focusing Optics X-ray Solar Imager (FOXSI) is a NASA sounding rocket mission which will study particle acceleration and coronal heating on the Sun through high sensitivity observations in the hard X-ray energy band (5-15 keV). Combining high-resolution focusing X-ray optics and fine-pitch imaging sensors, FOXSI will achieve superior sensitivity; two orders of magnitude better than that of the RHESSI satellite. As the focal plane detector, a Double-sided Si Strip Detector (DSSD) with a front-end ASIC (Application Specific Integrated Circuit) will fulfill the scientific requirements of spatial and energy resolution, low energy threshold and time resolution. We have designed and fabricated a DSSD with a thickness of 500 μm and a dimension of 9.6 mm x 9.6 mm, containing 128 strips with a pitch of 75 μm, which corresponds to 8 arcsec at the focal length of 2 m. We also developed a low-noise ASIC specified to FOXSI. The detector was successfully operated in the laboratory at a temperature of -20 C and with an applied bias voltage of 300 V, and the energy resolution of 430 eV at a 14 keV line was achieved. We also demonstrated fine-pitch imaging successfully by obtaining a shadow image, hence the implementation of scientific requirements was confirmed.

preprint2015arXiv

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60--600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm x 12 cm x 12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0--2.0 keV (FWHM) at 60 keV and 1.6--2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, respectively, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.