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Tang Su

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Published work

8 published item(s)

preprint2026arXiv

Mitigating Measurement Crosstalk via Pulse Shaping

Quantum error correction protocols require rapid and repeated qubit measurements. While multiplexed readout in superconducting quantum systems improves efficiency, fast probe pulses introduce spectral broadening, leading to signal leakage into neighboring readout resonators. This crosstalk results in qubit dephasing and degraded readout fidelity. Here, we introduce a pulse shaping technique inspired by the derivative removal by adiabatic gate (DRAG) protocol to suppress measurement crosstalk during fast readout. By engineering a spectral notch at neighboring resonator frequencies, the method effectively mitigates spurious signal interference. Our approach integrates seamlessly with existing readout architectures, enabling fast, low-crosstalk multiplexed measurements without additional hardware overhead - a critical advancement for scalable quantum computing.

preprint2025arXiv

High-performance quantum interconnect between bosonic modules beyond transmission loss constraints

Distributed quantum computing architectures require high-performance quantum interconnects between quantum information processing units, while previous implementations have been fundamentally limited by transmission line losses. Here, we demonstrate a low-loss interconnect between two superconducting modules using an aluminum coaxial cable, achieving a bus mode quality factor of 1.7e6. By employing SNAIL as couplers, we realize inter-modular state transfer in 0.8 μs via a three-wave mixing process. The state transfer fidelity reaches 98.2% for quantum states encoded in the first two energy levels, achieving a Bell state fidelity of 92.5%. Furthermore, we show the capability to transfer high-dimensional states by successfully transmitting binomially encoded logical states. Systematic characterization reveals that performance constraints have shifted from transmission line losses (contributing merely 0.2% infidelity) to module-channel interface effects and local Kerr nonlinearities. Our work advances the realization of quantum interconnects approaching fundamental capacity limits, paving the way for scalable distributed quantum computing and efficient quantum communications.

preprint2020arXiv

Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt

By exploiting proximity coupling, we probe the spin state of the surface layers of CrI3, a van der Waals magnetic semiconductor, by measuring the induced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices. We fabricate the devices with clean and stable interfaces by placing freshly exfoliated CrI3 flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI3 heterostructure with hexagonal boron nitride (hBN) in a protected environment. In devices consisting of a wide range of CrI3 thicknesses (30 to 150 nm), we observe that an abrupt upward jump in Pt MR emerge at a 2 T magnetic field applied perpendicularly to the layers when the current density exceeds 2.5x10^10 A/m2, followed by a gradual decrease over a range of 5 T. These distinct MR features suggest a spin-flop transition which reveals strong antiferromagnetic interlayer coupling in the surface layers of CrI3. We study the current dependence by holding the Pt/CrI3 sample at approximately the same temperature to exclude the joule heating effect, and find that the MR jump increases with the current density, indicating a spin current origin. This spin current effect provides a new route to control spin configurations in insulating antiferromagnets, which is potentially useful for spintronic applications.

preprint2016arXiv

Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film

Exchange bias is one of the most extensively studied phenomena in magnetism, since it exerts a unidirectional anisotropy to a ferromagnet (FM) when coupled to an antiferromagnet (AFM) and the control of the exchange bias is therefore very important for technological applications, such as magnetic random access memory and giant magnetoresistance sensors. In this letter, we report the crystal structure manipulation of the exchange bias in epitaxial hcp Cr2O3 films. By epitaxially growing twined (10-10) oriented Cr2O3 thin films, of which the c axis and spins of the Cr atoms lie in the film plane, we demonstrate that the exchange bias between Cr2O3 and an adjacent permalloy layer is tuned to in-plane from out-of-plane that has been observed in (0001) oriented Cr2O3 films. This is owing to the collinear exchange coupling between the spins of the Cr atoms and the adjacent FM layer. Such a highly anisotropic exchange bias phenomenon is not possible in polycrystalline films.

preprint2016arXiv

Experimental Investigation of Temperature-Dependent Gilbert Damping in Permalloy Thin Films

The Gilbert damping of ferromagnetic materials is arguably the most important but least understood phenomenological parameter that dictates real-time magnetization dynamics. Understanding the physical origin of the Gilbert damping is highly relevant to developing future fast switching spintronics devices such as magnetic sensors and magnetic random access memory. Here, we report an experimental study of temperature-dependent Gilbert damping in permalloy (Py) thin films of varying thicknesses by ferromagnetic resonance. From the thickness dependence, two independent contributions to the Gilbert damping are identified, namely bulk damping and surface damping. Of particular interest, bulk damping decreases monotonically as the temperature decreases, while surface damping shows an enhancement peak at the temperature of ~50 K. These results provide an important insight to the physical origin of the Gilbert damping in ultrathin magnetic films.

preprint2016arXiv

Positive Exchange Bias between Permalloy and Twined (10-10)-Cr2O3 Films

We report the discovery of a positive exchange bias between Ni80Fe20 (Py) and twined (10-10)-Cr2O3 film near its blocking temperature (TB) when it is cooled in an in-plane magnetic field applied along 45 degrees from the two spin configurations of the Cr atoms. This is an abnormal behavior compared to the negative exchange bias at all temperatures below TB when the cooling and measuring magnetic fields are applied along one of the two spin configurations of the Cr atoms. We speculate these results could be related to the exchange interactions between the twined structure of the (10-10)-Cr2O3 film epitaxially grown on the rutile (001)-TiO2 substrate.

preprint2016arXiv

Spin Injection and Inverse Edelstein Effect in the Surface States of Topological Kondo Insulator SmB6

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TI), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin-momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin-momentum locking property of surface states of SmB6.

preprint2015arXiv

Epitaxial growth and properties of La0.7Sr0.3MnO3 thin films with micrometer wide atomic terraces

La0.7Sr0.3MnO3 (LSMO) films with extraordinarily wide atomic terraces are epitaxially grown on SrTiO3 (100) substrates by pulsed laser deposition. Atomic force microscopy measurements on the LSMO films show that the atomic step is ~ 4 Å and the atomic terrace width is more than 2 micrometers. For a 20 monolayers (MLs) LSMO film, the magnetization is determined to be 255 +- 15 emu/cm3 at room temperature, corresponding to 1.70 + - 0.11 Bohr magneton per Mn atom. As the thickness of LSMO increases from 8 MLs to 20 MLs, the critical thickness for the temperature dependent insulator-to-metal behavior transition is shown to be 9 MLs. Furthermore, post-annealing in oxygen environment improves the electron transport and magnetic properties of the LSMO films.