Researcher profile

Tamio Oguchi

Tamio Oguchi contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Electronic Origin of Phase Stability in Mg-Zn-Y Alloys with a Long-Period Stacking Order

The origin of the phase stability of 18$R$ Mg-Zn-Y alloys with a long-period stacking order (LPSO) is studied using first-principles calculations. We calculate the heat of formation as a function of the number of Zn vacancies to discuss the role of Zn atoms. The calculated convex hull indicates that the Zn atoms in the LPSO alloys are stable even if they number about half of the Y atoms. The bonding state with Zn $p$ orbitals leads to the stability of the LPSO structure because the partial density of states of Mg nearest to the solute cluster forms a valley structure.

preprint2022arXiv

Pseudogap Formation in the Nodal-Line Semimetal NaAlGe

NaAlSi and NaAlGe are isostructural and isoelectronic semimetals with topological nodal lines close to the Fermi level. Despite having virtually identical electronic structures, NaAlSi exhibits superconductivity below Tc = 6.8 K, whereas NaAlGe does not. We investigate NaAlGe by measuring its electrical resistivity, Hall effect, magnetic susceptibility, and heat capacity using single crystals. It is revealed that NaAlGe is not a simple semimetal but rather has an unusual ground state with a small pseudogap of approximately 100 K close to the Fermi level. We argue that the formation of the pseudogap in NaAlGe is due to an unexpected Fermi surface instability, such as an excitonic instability, as opposed to the electron-phonon instability that leads to the formation of the superconducting gap in NaAlSi.

preprint2021arXiv

First-Principles Study on Cathode Properties of Li2MTiO4 and Na2MTiO4 (M = V, Cr, Mn, Fe, Co, Ni)

The cathode properties of Na2MTiO4 (M: transition-metal element) are investigated by means of density-functional-theory calculations. The stability between the layered structure and the disordered structure are focused in comparison with the Li2MTiO4 prototypical case. It is found that the layered structure is more stable than the disordered structure in Na2MTiO4 while those structure shows the similar stability in Li2MTiO4. In layered-structure Na2MTiO4, the formation enthalpies at the intermediate compounds during charge/discharge reactions are significantly low, leading to the unstable voltage-capacity profiles. A machine-learning analysis reveals that the total-energy difference between these structures can be described by a simple function of ionic radii.

preprint2020arXiv

Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6

We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator Bi2Se3 was epitaxially grown on a van-der-Waals ferromagnet Cr2Si2Te6 (CST) by angle-resolved photoemission spectroscopy. We observed a gapless Dirac-cone surface state in 6 quintuple-layer (QL) Bi2Se3 on CST, whereas the Dirac cone exhibits a gap of 0.37 eV in 2QL counterpart. Intriguingly, this gap is much larger than those for Bi2Se3 films on Si(111). We also revealed no discernible change in the gap magnitude across the ferromagnetic transition of CST, suggesting the very small characteristic length and energy scale of the magnetic proximity effect. The present results suggest a crucial role of interfacial coupling for modulating Dirac electrons in topological-insulator hybrids.

preprint2020arXiv

Unusual temperature evolution of band structure of Bi(111) studied by angle-resolved photoemission spectroscopy and density functional theory

We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-well states, as seen in the highly momentum-dependent energy shift as large as 0.1 eV. A comparison of the band dispersion between experiment and first-principles band-structure calculations suggests that the interlayer spacing at the topmost Bi bilayer expands upon temperature increase. The present study provides a new pathway for investigating the interplay between lattice and electronic states through the temperature dependence of band structure.

preprint2019arXiv

DFT-Based Engineering of Dirac Surface Energy in Topological-Insulator Multilayers

Aiming at the future spintronics device applications of the spin-polarized surface states in three-dimensional topological insulator, a highly insulating bulk state and a tunable Dirac cone surface state are required. Here we employ a slab model having hetero-structural Bi2Se3-related quintuple layers and perform first-principles simulations. Our computational results show that the Dirac-point energy can be optimally tuned by selecting an appropriate pair of materials so that the work function at the surface quintuple layer is slightly different from that at the inner quintuple layers. The ideal surface state is obtained in Bi2Te3/(Bi2Te2Se)4/Bi2Te3 slab, in which the Fermi lines show the significant warping effect and both the in-plane and the out-of-plane components of the spin polarization emerge.