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Source author record

Tamio Oguchi

Tamio Oguchi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.othercond-mat.supr-conphysics.atm-clus

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Published work

14 published item(s)

preprint2022arXiv

Electronic Origin of Phase Stability in Mg-Zn-Y Alloys with a Long-Period Stacking Order

The origin of the phase stability of 18$R$ Mg-Zn-Y alloys with a long-period stacking order (LPSO) is studied using first-principles calculations. We calculate the heat of formation as a function of the number of Zn vacancies to discuss the role of Zn atoms. The calculated convex hull indicates that the Zn atoms in the LPSO alloys are stable even if they number about half of the Y atoms. The bonding state with Zn $p$ orbitals leads to the stability of the LPSO structure because the partial density of states of Mg nearest to the solute cluster forms a valley structure.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pseudogap Formation in the Nodal-Line Semimetal NaAlGe

NaAlSi and NaAlGe are isostructural and isoelectronic semimetals with topological nodal lines close to the Fermi level. Despite having virtually identical electronic structures, NaAlSi exhibits superconductivity below Tc = 6.8 K, whereas NaAlGe does not. We investigate NaAlGe by measuring its electrical resistivity, Hall effect, magnetic susceptibility, and heat capacity using single crystals. It is revealed that NaAlGe is not a simple semimetal but rather has an unusual ground state with a small pseudogap of approximately 100 K close to the Fermi level. We argue that the formation of the pseudogap in NaAlGe is due to an unexpected Fermi surface instability, such as an excitonic instability, as opposed to the electron-phonon instability that leads to the formation of the superconducting gap in NaAlSi.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

First-Principles Study on Cathode Properties of Li2MTiO4 and Na2MTiO4 (M = V, Cr, Mn, Fe, Co, Ni)

The cathode properties of Na2MTiO4 (M: transition-metal element) are investigated by means of density-functional-theory calculations. The stability between the layered structure and the disordered structure are focused in comparison with the Li2MTiO4 prototypical case. It is found that the layered structure is more stable than the disordered structure in Na2MTiO4 while those structure shows the similar stability in Li2MTiO4. In layered-structure Na2MTiO4, the formation enthalpies at the intermediate compounds during charge/discharge reactions are significantly low, leading to the unstable voltage-capacity profiles. A machine-learning analysis reveals that the total-energy difference between these structures can be described by a simple function of ionic radii.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6

We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator Bi2Se3 was epitaxially grown on a van-der-Waals ferromagnet Cr2Si2Te6 (CST) by angle-resolved photoemission spectroscopy. We observed a gapless Dirac-cone surface state in 6 quintuple-layer (QL) Bi2Se3 on CST, whereas the Dirac cone exhibits a gap of 0.37 eV in 2QL counterpart. Intriguingly, this gap is much larger than those for Bi2Se3 films on Si(111). We also revealed no discernible change in the gap magnitude across the ferromagnetic transition of CST, suggesting the very small characteristic length and energy scale of the magnetic proximity effect. The present results suggest a crucial role of interfacial coupling for modulating Dirac electrons in topological-insulator hybrids.

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preprint2020arXiv

Unusual temperature evolution of band structure of Bi(111) studied by angle-resolved photoemission spectroscopy and density functional theory

We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-well states, as seen in the highly momentum-dependent energy shift as large as 0.1 eV. A comparison of the band dispersion between experiment and first-principles band-structure calculations suggests that the interlayer spacing at the topmost Bi bilayer expands upon temperature increase. The present study provides a new pathway for investigating the interplay between lattice and electronic states through the temperature dependence of band structure.

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preprint2019arXiv

DFT-Based Engineering of Dirac Surface Energy in Topological-Insulator Multilayers

Aiming at the future spintronics device applications of the spin-polarized surface states in three-dimensional topological insulator, a highly insulating bulk state and a tunable Dirac cone surface state are required. Here we employ a slab model having hetero-structural Bi2Se3-related quintuple layers and perform first-principles simulations. Our computational results show that the Dirac-point energy can be optimally tuned by selecting an appropriate pair of materials so that the work function at the surface quintuple layer is slightly different from that at the inner quintuple layers. The ideal surface state is obtained in Bi2Te3/(Bi2Te2Se)4/Bi2Te3 slab, in which the Fermi lines show the significant warping effect and both the in-plane and the out-of-plane components of the spin polarization emerge.

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preprint2016arXiv

Electronic structure and phase transition in polar ScFeO3 from First Principles Calculations

The properties of newly discovered polar ScFeO3 with magnetic ordering are examined using Ab initio calculations and symmetry mode analysis. The GGA+U calculation confirms the stability of polar R3c Phase in ScFeO3 and the pressure induced phase transition to non-polar Pnma phase. Octahedron tilting and structural properties as a function of applied pressure have been analyzed. The origin of polar phase is associated with instability of non-polar R-3c phase and group theory using the symmetry mode analysis has been applied to understand this instability as well as the spontaneous polarization of polar R3c phase. The magnetic phase transition shows G-type AFM ordering of Fe3+ ion within Goodenough-Kanamori theory and the possibility of magnetic spin structure has been analyzed by using energy analysis including spin canting possibility.

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preprint2015arXiv

Coupling ferroelectricity with spin-valley physics in oxide-based heterostructure

The coupling of spin and valley physics is nowadays regarded as a promising route toward next-generation spintronic and valleytronic devices. In the aim of engineering functional properties for valleytronic applications, we focus on the ferroelectric heterostructure BiAlO3/BiIrO3, where the complex interplay among trigonal crystal field, layer degrees of freedom and spin-orbit coupling mediates a strong spin-valley coupling. Furthermore, we show that ferroelectricity provides a non-volatile handle to manipulate and switch the emerging valley-contrasting spin polarization.

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preprint2015arXiv

Impact of Ferroelectric Distortion on Thermopower in BaTiO3

We present a strategy for increasing thermoelectric performance by invoking ferroelectric distortion in a transition-metal oxide. By using an ab initio calculation approach with the Boltzmann transport equation, a large Seebeck coefficient is calculated in n-type BaTiO3. The polar structural distortion causes the peculiar dispersion of the lowest conduction band, which enhances the Seebeck coefficient along the polar direction. A microscopic mechanism of carrier concentration dependence of the Seebeck coefficient is discussed in terms of the band velocity distribution in the Brillouin zone.

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preprint2014arXiv

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

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preprint2013arXiv

Ab-initio prediction of magnetoelectricity in infinite-layer CaFeO2 and MgFeO2

Density functional based simulations are employed to explore magnetoelectric effects in iron-based oxides, showing a unique layered structure. We theoretically predict CaFeO2 to be a promising magnetoelectric, showing magnetically-controlled large electric polarization, possibly even above room temperature. The cross coupling between magnetic and dipolar degrees of freedom needs, as main ingredients, Fe-site spin-orbit coupling and a spin-dependent O p - Fe d hybridization, along with structural constraints related to the non-centrosymmetric point group and the peculiar geometry characterized by "flattened" FeO4 tetrahedrons. In order to enhance magnetoelectric effects, we performed a materials-design leading to a novel and optimized system, MgFeO2, where the larger O4 tetrahedral distortion leads to a stronger polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic Structure of the Metallic Antiferromagnet PdCrO$_2$ Measured by Angle-Resolved Photoemission Spectroscopy

PdCrO$_2$ is material which has attracted interest due to the coexistence of metallic conductivity associated with itinerant Pd 4d electrons and antiferromagnetic order arising from localized Cr spins. A central issue is determining to what extent the magnetic order couples to the conduction electrons. Here we perform angle-resolved photoemission spectroscopy (ARPES) to experimentally characterize the electronic structure. We find that the Fermi surface has contributions from both bulk and surface states, which can be experimentally distinguished and theoretically verified by slab band structure calculations. The bulk Fermi surface shows no signature of electronic reconstruction in the antiferromagnetic state. This observation suggests that there is negligible interaction between the localized Cr spin structure and the itinerant Pd electrons measured by ARPES.

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preprint2013arXiv

Extremely Large Magnetoresistance in the Nonmagnetic Metal PdCoO2

Extremely large magnetoresistance is realized in the nonmagnetic layered metal PdCoO2. In spite of a highly conducting metallic behavior with a simple quasi-two-dimensional hexagonal Fermi surface, the interlayer resistance reaches up to 35000% for the field along the [1-10] direction. Furthermore, the temperature dependence of the resistance becomes nonmetallic for this field direction, while it remains metallic for fields along the [110] direction. Such severe and anisotropic destruction of the interlayer coherence by a magnetic field on a simple Fermi surface is ascribable to orbital motion of carriers on the Fermi surface driven by the Lorentz force, but seems to have been largely overlooked until now.

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preprint2010arXiv

Direct evidence of spin-split one-dimensional metallic surface state on Si(557)-Au

We report unprecedented evidence of a spin split one-dimensional metallic surface state for the system of Si(557)-Au obtained by means of high-resolution spin- and angle-resolved photoelectron spectroscopy combined with first principles calculations. The surface state shows double parabolic energy dispersions along the Au chain structure together with a reversal of the spin polarization with respect to the time-reversal symmetry point as is characteristic from the Rashba effect. Moreover, we have observed a considerably large out-of-plane spin polarization which we attribute to the highly anisotropic wave function of the gold chains.

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