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Taleana Huff

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2025arXiv

Inverted-Mode Scanning Tunneling Microscopy for Atomically Precise Fabrication

Scanning Tunneling Microscopy (STM) enables fabrication of atomically precise structures with unique properties and growing technological potential. However, reproducible manipulation of covalently bonded atoms requires control over the atomic configuration of both sample and probe - a longstanding challenge in STM. Here, we introduce inverted-mode STM, an approach that enables mechanically controlled chemical reactions for atomically precise fabrication. Tailored molecules on a Si(100) surface image the probe apex, and the usual challenge of understanding the probe structure is effectively solved. The molecules can also react with the probe, with the two sides of the tunnel junction acting as reagents positioned with sub-angstrom precision. This allows abstraction or donation of atoms from or to the probe apex. We demonstrate this by using a novel alkynyl-terminated molecule to reproducibly abstract hydrogen atoms from the probe. The approach is expected to extend to other elements and moieties, opening a new avenue for scalable atomically precise fabrication.

preprint2020arXiv

Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM

The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption of surface hydrogen atoms. While samples with relatively large areas of the hydrogen terminated 2x1 surface are routinely created using an in-situ methodology, surface defects are inevitably formed as well reducing the area available for patterning. Here, we present a catalog of several commonly found defects of the H-Si(100)-2x1 surface. By using a combination of scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM), we are able to extract useful information regarding the atomic and electronic structure of these defects. This allowed for the confirmation of literature assignments of several commonly found defects, as well as proposed classification of previously unreported and unassigned defects. By better understanding the structure and origin of these defects, we make the first steps toward enabling the creation of superior surfaces ultimately leading to more consistent and reliable fabrication of atom scale devices.

preprint2020arXiv

Ionic Charge Distributions in Silicon Atomic Wires

Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at varying energies, we identify the formation of previously unobserved ionic charge distributions correlated to the net charge of DB wires and their predicted lattice distortion. Performing spectroscopic analysis, we identify higher energy configurations corresponding to alternative lattice distortions as well as tip-induced charging effects. By varying the length and orientation of these DB structures, we further highlight key features in the formation of these ionic surface phases.

preprint2019arXiv

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage

Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum computation, and data storage all rely on a well-developed understanding of materials at the atomic scale. Here, we report a versatile scanning tunneling microscope (STM) charge characterization technique, which reduces the influence of the typically perturbative STM tip field, to develop this understanding even further. Using this technique, we can now observe single molecule binding events to atomically defined reactive sites (fabricated on a hydrogen-terminated silicon surface) through electronic detection. We then developed a new error correction tool for automated hydrogen lithography, directing molecular hydrogen binding events using these sites to precisely repassivate surface dangling bonds (without the use of a scanned probe). We additionally incorporated this molecular repassivation technique as the primary rewriting mechanism in new ultra-dense atomic data storage designs (0.88 petabits per in$^{2}$).

preprint2019arXiv

Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot

With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly-doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor species, we suggest is of a character more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex.

preprint2015arXiv

New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant

A new technique for the fabrication of highly sensitive qPlus sensor for atomic force microscopy (AFM) is described. Focused ion beam was used to cut then weld onto a bare quartz tuning fork a sharp micro-tip from an electrochemically etched tungsten wire. The resulting qPlus sensor exhibits high resonance frequency and quality factor allowing increased force gradient sensitivity. Its spring constant can be determined precisely which allows accurate quantitative AFM measurements. The sensor is shown to be very stable and could undergo usual UHV tip cleaning including e-beam and field evaporation as well as in-situ STM tip treatment. Preliminary results with STM and AFM atomic resolution imaging at $4.5\,K$ of the silicon $Si(111)-7\times 7$ surface are presented.