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Takuo Tanaka

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2 published item(s)

preprint2022arXiv

Metamaterial Thermoelectric Conversion

We propose a thermoelectric device that can produce a thermal gradient even in a uniform-temperature environment. We introduced a metamaterial absorber (MA), which comprised a transparent calcium fluoride layer sandwiched between a silver mirror layer and silver microdisk arrays, at one end of a thermoelectric device made of bismuth antimony telluride. The heating efficiencies of the MA and opposite electrodes of the device were unbalanced; consequently, the Seebeck effect was induced, resulting in electricity generation. We fabricated the MA on a copper electrode loaded on a thermoelectric device, and the device was placed in a uniform-temperature environment at 364 K. The thermal gradient across the device was experimentally measured and was found to be 0.14 K.

preprint2015arXiv

Few Layer HfS2 FET

2D materials are expected to be favorable channel materials for field-effect transistor (FET) with extremely short channel length because of their superior immunity to short-channel effects (SCE). Graphene, which is the most famous 2D material, has no bandgap without additional techniques and this property is major hindrance in reducing the drain leakage. Therefore, 2D materials with finite band gap, such as transition metal dichalcogenides (TMDs, e.g. MoS2 WSe2) or phosphorene, are required for the low power consumption FETs. Hafnium disulfide (HfS2) is a novel TMD, which has not been investigated as channel material. We focused on its potential for well-balanced mobility and bandgap properties. The higher electron affinity of Hf dichalcogenides compared with Mo or W chalcogenides facilitates the formation of low resistance contact and staggered heterojunction with other 2D materials. Here we demonstrate the first few layer HfS2 FET with robust current saturation and high current on/off ratio of more than 10^4.