Source author record

Taketomo Nakamura

Taketomo Nakamura appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

8works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2020arXiv

Gate controlled unitary operation on flying spin qubits in quantum Hall edge states

Spin and orbital freedoms of electrons traveling on spin-resolved quantum Hall edge states (quantum Hall ferromagnets) are maximally entangled. The unitary operations on these two freedoms are hence equivalent, which means one can manipulate the spins with non-magnetic methods through the orbitals. If one takes the quantization axis of spins along the magnetization axis, the zenith angle is determined by the partition rate of spin-separated edges while the azimuth angle is defined as the phase difference between the edges. Utilizing these properties, we have realized electrically controlled unitary operation on the electron spins on the quantum Hall ferromagnets. The zenith angle of the spin was controlled through the radius of gyration at a corner by means of applying voltage to a thin gate placed at one edge. The subsequent rotation in the azimuth angle was controlled via the distance between the edge channels also by a gate voltage. The combination of the two operations constitutes the first systematic electric operation on spins in the quantum Hall edge channels.

preprint2020arXiv

Room-temperature quantum spin Hall phase in laser-patterned few-layer 1T'- MoS2

The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over a large sample area and/or defects induced by oxidation. Here, we report the observation of the QSH phase at room-temperature in the 1T'-phase of few-layer MoS2 patterned onto the 2H semiconducting phase using low-power and short-time laser beam irradiation. Two different resistance measurements reveal hallmark transport conductance values, ~e2/2h and e2/4h, as predicted by the theory. Magnetic-field dependence, scanning tunneling spectra, and calculations support the emergence of the room-temperature QSH phase. Although further experimental verification is still desirable, our results provide feasible application to room-temperature topological devices.

preprint2016arXiv

Experimental Verification of a Spin-Interference Device Action

We report the detection of spin interference signal in an Aharonov-Bohm type interferometer with quantum dots on the conduction paths. We have found that resonators like quantum dots can work as efficient spin rotators. The interference signal appears only when spin-polarized electrons are injected into the device. The interference pattern in the gate voltage-magnetic field plane is checker board like, ensuring the modulation of spin wavefunction's phase as well as the orbital phase.

preprint2016arXiv

Spin-polarization in the vicinity of quantum point contact with spin-orbit interaction

We have developed a novel technique for detection of spin polarization with a quantum dot weakly coupled to the objective device. The disturbance to the object in this technique is very small since the detection is performed through sampling of single electrons in the object with very slow rate. We have applied the method to a quantum point contact (QPC) under a spin-orbit interaction. A high degree of spin polarization in the vicinity of the QPC was detected when the conductance stayed on a plateau at a half of the unit conductance quantum ($G_{\rm q}/2\equiv e^2/h$), and also on another plateau at $2e^2/h$. On the half-quantum plateau, the degree of polarization $P$ decreased with the bias source-drain voltage of the QPC while $P$ increased on the single-quantum plateau, manifesting that different mechanisms of polarization were working on these plateaus. Very long spin relaxation times in the detector quantum dot probably due to dynamical nuclear spin polarization were observed. Anomalous decrease of $P$ around zero-bias was observed at a Kondo-like resonance peak.

preprint2016arXiv

Trembling electrons cause conductance fluctuation

The highly successful Dirac equation can predict peculiar effects such as Klein tunneling and the "Zitterbewegung" (German for "trembling motion") of electrons. From the time it was first identified by Erwin Schrodinger, Zitterbewegung (ZB) has been considered a key to understanding relativistic quantum mechanics. However, observing the original ZB of electrons is too difficult, and instead various emulations using entity models have been proposed, producing several successes. Expectations are high regarding charge transports in semiconductors and graphene; however, very few reports have appeared on them. Here, we report that ZB has a surprisingly large effect on charge transports when we play "flat pinball" with such trembling electrons in a semiconductor nanostructure. The stage here is a narrow strip of InAs two-dimensional electron gas with a strong Rashba spin-orbit coupling. Six quantum point contacts (QPCs) are attached to the strip as pinball pockets. The ZB appeared as a large reproducible conductance fluctuation versus in-plane magnetic fields in the transport between two QPCs. Numerical simulations successfully reproduced our experimental observations, certifying that ZB causes a new type of conductance fluctuation.

preprint2013arXiv

Anomalous switching in Nb/Ru/Sr2RuO4 topological junctions by chiral domain wall motion

A spontaneous symmetry breaking in a system often results in domain wall formation. The motion of such domain walls is utilized to realize novel devices like racetrack-memories, in which moving ferromagnetic domain walls store and carry information. Superconductors breaking time reversal symmetry can also form domains with degenerate chirality of their superconducting order parameter. Sr2RuO4 is the leading candidate of a chiral p-wave superconductor, expected to be accompanied by chiral domain structure. Here, we present that Nb/Ru/Sr2RuO4 topological superconducting-junctions, with which the phase winding of order parameter can be effectively probed by making use of real-space topology, exhibit unusual switching between higher and lower critical current states. This switching is well explained by chiral-domain-wall dynamics. The switching can be partly controlled by external parameters such as temperature, magnetic field and current. These results open up a possibility to utilize the superconducting chiral domain wall motion for future novel superconducting devices.

preprint2011arXiv

Topological competition of superconductivity in Pb/Ru/Sr_2RuO_4 junctions

We devise a new proximity junction configuration where an s-wave superconductivity and the superconductivity of Sr2RuO4 interfere with each other. We reproducibly observe in such a Pb/Ru/Sr2RuO4 junction with a single Pb electrode that the critical current Ic drops sharply just below the bulk Tc of Sr2RuO4 and furthermore increases again below a certain temperature below Tc. In order to explain this extraordinary temperature dependence of Ic, we propose a competition effect involving topologically distinct superconducting phases around Ru inclusions. Thus, such a device may be called a "topological superconducting junction".