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Takeshi Ota

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2013arXiv

Cooperative Lifting of Spin Blockade in a Three-Terminal Triple Quantum Dot

We report measurements of multi-path transport through a triple quantum dot (TQD) in the few-electron regime using a GaAs three-terminal device with a separate lead attached to each dot. When two paths reside inside the transport window and are simultaneously spin-blockaded, the leak currents through both paths are significantly enhanced. We suggest that the transport processes in the two paths cooperate to lift the spin blockade. Fine structures in transport spectra indicate that different kinds of cooperative mechanisms are involved, depending on the details of the three-electron spin states governed by the size of exchange splitting relative to nuclear spin fluctuations. Our results indicate that a variety of correlation phenomena can be explored in three-terminal TQDs.

preprint2013arXiv

Intrinsic and extrinsic origins of low-frequency noise in GaAs/AlGaAs Schottky-gated nanostructures

We study low-frequency noise in current passing through quantum point contacts fabricated from several GaAs/AlGaAs heterostructures with different layer structures and fabrication processes. In contrast to previous reports, there is no gate-dependent random telegraph noise (RTN) originating from tunneling through a Schottky barrier in devices fabricated using the standard low-damage process. Gate-dependent RTN appears only in devices fabricated with a high-damage process that induces charge trap sites. We show that the insertion of AlAs/GaAs superlattices in the AlGaAs barrier helps to suppress trap formation. Our results enable the fabrication of damage-resistant and thus low-noise devices.

preprint2010arXiv

Voltage-controlled Group Velocity of Edge Magnetoplasmon in the Quantum Hall Regime

We investigate the group velocity of edge magnetoplasmons (EMPs) in the quantum Hall regime by means of time-of-flight measurement. The EMPs are injected from an Ohmic contact by applying a voltage pulse, and detected at a quantum point contact by applying another voltage pulse to its gate. We find that the group velocity of the EMPs traveling along the edge channel defined by a metallic gate electrode strongly depends on the voltage applied to the gate. The observed variation of the velocity can be understood to reflect the degree of screening caused by the metallic gate, which damps the in-plane electric field and hence reduces the velocity. The degree of screening can be controlled by changing the distance between the gate and the edge channel with the gate voltage.

preprint2009arXiv

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics

We propose and demonstrate wide-band capacitance measurements on a semiconductor double-quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector, we perform on-chip lock-in detection of the capacitance associated with the single-electron motion over a wide frequency range from hertz to a few ten gigahertz. Analyzing the phase and the frequency dependence of the signal allows us to extract the characteristic tunneling rates. We show that, by applying this technique to the interdot tunnel coupling regime, quantum capacitance reflecting the strength of the quantum-mechanical coupling can be measured.