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Takayuki Tahara

Takayuki Tahara appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2016arXiv

Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory

A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 Ω, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room temperature. This is the largest spin-accumulation voltage measured in semiconductor-based LSVs. The modified spin drift-diffusion model, which successfully accounts for the spin drift effect, explains the large spin-accumulation voltage and significant bias-current-polarity dependence. The model also shows that the spin drift effect enhances the spin-dependent magnetoresistance in the electric two terminal scheme. This finding provides a useful guiding principle for spin metal-oxide semiconductor field-effect transistor (MOSFET) operations.

preprint2015arXiv

Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way to practical use of the Si spin MOSFET.

preprint2014arXiv

Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature

Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in non-degenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observed the modulation of the Hanle-type spin precession signals, which is a characteristic spin dynamics in non-degenerate semiconductor. We obtained long spin transport of more than 20 μm and spin rotation, greater than 4π at RT. We also observed gate-induced modulation of spin transport signals at RT. The modulation of spin diffusion length as a function of a gate voltage was successfully observed, which we attributed to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to make avenues to create of practical Si-based spin MOSFETs.