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Takashi Nakajima

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Published work

26 published item(s)

preprint2026arXiv

Inferring charge-noise source locations from correlations in spin qubits

We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra are not well described by a power law; instead, they reveal the presence of a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.

preprint2022arXiv

Quantum error correction with silicon spin qubits

Large-scale quantum computers rely on quantum error correction to protect the fragile quantum information. Among the possible candidates of quantum computing devices, silicon-based spin qubits hold a great promise due to their compatibility to mature nanofabrication technologies for scaling up. Recent advances in silicon-based qubits have enabled the implementations of high quality one and two qubit systems. However, the demonstration of quantum error correction, which requires three or more coupled qubits and often involves a three-qubit gate, remains an open challenge. Here, we demonstrate a three-qubit phase correcting code in silicon, where an encoded three-qubit state is protected against any phase-flip error on one of the three qubits. The correction to this encoded state is performed by a three-qubit conditional rotation, which we implement by an efficient single-step resonantly driven iToffoli gate. As expected, the error correction mitigates the errors due to one qubit phase-flip as well as the intrinsic dephasing due to quasi-static phase noise. These results show a successful implementation of quantum error correction and the potential of silicon-based platform for large-scale quantum computing.

preprint2021arXiv

Fast universal quantum control above the fault-tolerance threshold in silicon

Fault-tolerant quantum computers which can solve hard problems rely on quantum error correction. One of the most promising error correction codes is the surface code, which requires universal gate fidelities exceeding the error correction threshold of 99 per cent. Among many qubit platforms, only superconducting circuits, trapped ions, and nitrogen-vacancy centers in diamond have delivered those requirements. Electron spin qubits in silicon are particularly promising for a large-scale quantum computer due to their nanofabrication capability, but the two-qubit gate fidelity has been limited to 98 per cent due to the slow operation.Here we demonstrate a two-qubit gate fidelity of 99.5 per cent, along with single-qubit gate fidelities of 99.8 per cent, in silicon spin qubits by fast electrical control using a micromagnet-induced gradient field and a tunable two-qubit coupling. We identify the condition of qubit rotation speed and coupling strength where we robustly achieve high-fidelity gates. We realize Deutsch-Jozsa and Grover search algorithms with high success rates using our universal gate set. Our results demonstrate the universal gate fidelity beyond the fault-tolerance threshold and pave the way for scalable silicon quantum computers.

preprint2021arXiv

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.

preprint2020arXiv

Coherence of a driven electron spin qubit actively decoupled from quasi-static noise

The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasi-static noise inherent to any semiconductor device. We employed a feedback control technique to actively suppress the latter, demonstrating a $π$-flip gate fidelity as high as $99.04\pm 0.23\,\%$ in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the $1/f$ noise observed in isotopically purified silicon qubits.

preprint2020arXiv

Radio-frequency detected fast charge sensing in undoped silicon quantum dots

Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by a radio-frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly-occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 μs, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.

preprint2020arXiv

Spin orbit field in a physically defined p type MOS silicon double quantum dot

We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components.

preprint2019arXiv

Resonantly driven singlet-triplet spin qubit in silicon

We report implementation of a resonantly driven singlet-triplet spin qubit in silicon. The qubit is defined by the two-electron anti-parallel spin states and universal quantum control is provided through a resonant drive of the exchange interaction at the qubit frequency. The qubit exhibits long $T_2^*$ exceeding 1 $μ$s that is limited by dephasing due to the $^{29}$Si nuclei rather than charge noise thanks to the symmetric operation and a large micro-magnet Zeeman field gradient. The randomized benchmarking shows 99.6 % single gate fidelity which is the highest reported for singlet-triplet qubits.

preprint2019arXiv

Sunspot Observations by Hisako Koyama: 1945-1996

The sunspot record is the only observational tracer of solar activity that provides a fundamental, multi-century reference. Its homogeneity has been largely maintained with a succession of long-duration visual observers. In this paper, we examine observations of one of the primary reference sunspot observers, Hisako Koyama. By consulting original archives of the National Museum of Nature and Science of Japan (hereafter, NMNS), we retrace the main steps of her solar-observing career, from 1945 to 1996. We also present the reconstruction of a full digital database of her sunspot observations at the NMNS, with her original drawings and logbooks. Here, we extend the availability of her observational data from 1947-1984 to 1945-1996. Comparisons with the international sunspot number (version 2) and with the group sunspot number series show a good global stability of Koyama's observations, with only temporary fluctuations over the main interval 1947-1982. Identifying drawings made by alternate observers throughout the series, we find that a single downward baseline shift in the record coincides with the partial contribution of replacement observers mostly after 1983. We determine the correction factor to bring the second part (1983-1996) to the same scale with Koyama's main interval (1947-1982). We find a downward jump by 9% after 1983, which then remains stable until 1996. Overall, the high quality of Koyama's observations with her life-long dedication leaves a lasting legacy of this exceptional personal achievement. With this comprehensive recovery, we now make the totality of this legacy directly accessible and exploitable for future research.

preprint2016arXiv

Coherent electron-spin-resonance manipulation of three individual spins in a triple quantum dot

Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressable manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micro-magnet makes the local Zeeman field difference between neighboring spins much larger than the nuclear field fluctuation, which ensures the addressable driving of electron-spin-resonance by shifting the resonance condition for each spin. We observe distinct coherent Rabi oscillations for three spins in a semiconductor triple quantum dot with up to 25 MHz spin rotation frequencies. This individual manipulation over three spins enables us to arbitrarily change the magnetic spin quantum number of the three spin system, and thus to operate a triple-dot device as a three-qubit system in combination with the existing technique of exchange operations among three spins.

preprint2016arXiv

Fast probe of local electronic states in nanostructures utilizing a single-lead quantum dot

Transport measurements are powerful tools to probe electronic properties of solid-state materials. To access properties of local electronic states in nanostructures, such as local density of states, electronic distribution and so on, micro-probes utilizing artificial nanostructures have been invented to perform measurements in addition to those with conventional macroscopic electronic reservoirs. Here we demonstrate a new kind of micro-probe: a fast single-lead quantum dot probe, which utilizes a quantum dot coupled only to the target structure through a tunneling barrier and fast charge readout by RF reflectometry. The probe can directly access the local electronic states with wide bandwidth. The probe can also access more electronic states, not just those around the Fermi level, and the operations are robust against bias voltages and temperatures.

preprint2015arXiv

Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots

Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a design scheme to improve the spin-rotation frequency (to exceed 50MHz in GaAs nanostructures). We then validate our design by experiments in separate devices. Our results will open a route to rapidly control solid-state electron spins with limited lifetimes and to study coherent spin dynamics in solids.

preprint2015arXiv

Single-electron Spin Resonance in a Quadruple Quantum Dot

Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of the electron spin resonance is possible.

preprint2015arXiv

Singular-value decomposition using quantum annealing

In the present study, we demonstrate how to perform, using quantum annealing, the singular value decomposition and the principal component analysis. Quantum annealing gives a way to find a ground state of a system, while the singular value decomposition requires the maximum eigenstate. The key idea is to transform the sign of the final Hamiltonian, and the maximum eigenstate is obtained by quantum annealing. Furthermore, the adiabatic time scale is obtained by the approximation focusing on the maximum eigenvalue.

preprint2015arXiv

Spin-dependent current through a quantum dot from spin-polarized non-equilibrium quantum Hall edge channels

We report selective injection of both spin-up and spin-down single electrons into a quantum dot (QD) from spin-polarized non-equilibrium quantum Hall edge channels (ECs) generated by selective transmission of spin-resolved ECs using a surface gate placed at a distance from the QD. We change the spin polarization of non-equilibrium ECs by changing the bias voltages applied to different source Ohmic contacts. The efficiency of spin-up electron injection reaches 0.5, which is approximately 0.2 higher than that induced by spin-dependent tunnel coupling between QD and ECs. On the other hand, the efficiency of spin-down electron injection reaches 0.4. In addition, we rectify the underestimation of the efficiency of spin filtering for equilibrium ECs by numerically subtracting the contribution of the excited states in the QD. The obtained spin-filtering efficiency is higher than that evaluated from the raw experimental data and increases with magnetic field as expected with the increase in the spatial separation between ECs.

preprint2014arXiv

Measurement of energy relaxation in quantum Hall edge states utilizing quantum point contacts

We demonstrated a method to probe local electronic states and energy relaxation in quantum Hall edge states utilizing quantum point contacts. We evaluated relaxation lengths in two cases; first, with electron tunneling, and second, only with energy exchange without tunneling between edge states. The results were consistent with previous experiments and validated our method with quantum point contacts. We applied this method to measure the energy relaxation length around a hotspot in quantum Hall regimes and revealed the possible short-distance relaxation process to be the relaxation due to energy exchange between edge states without electron tunneling.

preprint2014arXiv

Negative refraction of inhomogeneous waves in lossy isotropic media

We theoretically study negative refraction of inhomogeneous waves at the interface of lossy isotropic media. We obtain explicit (up to the sign) expressions for the parameters of a wave transmitted through the interface between two lossy media characterized by complex permittivity and permeability. We show that the criterion of negative refraction that requires negative permittivity and permeability can be used only in the case of a homogeneous incident wave at the interface between a lossless and lossy media. In a more general situation, when the incident wave is inhomogeneous, or both media are lossy, the criterion of negative refraction becomes dependent on an incident angle. Most interestingly, we show that negative refraction can be realized in conventional lossy materials (such as metals) if their interfaces are properly oriented.

preprint2014arXiv

Propagation of two short laser pulse trains in a $Λ$-type three-level medium under conditions of electromagnetically induced transparency

We investigate the dynamics of a pair of short laser pulse trains propagating in a medium consisting of three-level $Λ$-type atoms by numerically solving the Maxwell-Schrödinger equations for atoms and fields. By performing propagation calculations with different parameters, under conditions of electromagnetically induced transparency, we compare the propagation dynamics by a single pair of probe and coupling laser pulses and by probe and coupling laser pulse trains. We discuss the influence of the coupling pulse area, number of pulses, and detunings on the probe laser propagation and realization of electromagnetically induced transparency conditions, as well on the formation of a dark state.

preprint2013arXiv

All-angle collimation of incident light in $\mathbfμ$-near-zero metamaterials

We use the theory of inhomogeneous waves to study the transmission of light in $μ$-near-zero metamaterials. We find the effect of all-angle collimation of incident light, which means that the vector of energy flow in a wave transmitted to a $μ$-near-zero metamaterial is perpendicular to the interface for any incident angles if an incident wave is s-polarized. This effect is similar to the all-angle collimation of incident light recently found through a different theoretical framework in $\varepsilon$-near-zero metamaterials for a p-polarized incident wave [S. Feng, Phys. Rev. Lett. 108, 193904 (2012)]. To provide a specific example, we consider the transmission of light in a negative-index metamaterial in the spectral region with a permeability resonance, and show that all-angle collimation indeed takes place at the wavelength for which the real part of permeability is vanishingly small.

preprint2013arXiv

Damage threshold and focusability of mid-infrared free-electron laser pulses gated by a plasma mirror with nanosecond switching pulses

The presence of a pulse train structure of an oscillator-type free-electron laser (FEL) results in the immediate damage of a solid target upon focusing. We demonstrate that the laser-induced damage threshold can be significantly improved by gating the mid-infrared (MIR) FEL pulses with a plasma mirror. Although the switching pulses we employ have a nanosecond duration which does not guarantee the clean wavefront of the gated FEL pulses, the high focusablity is experimentally confirmed through the observation of spectral broadening by a factor of 2.1 when we tightly focus the gated FEL pulses onto the Ge plate.

preprint2013arXiv

Diagnosis of the Wavelength Stability of a Mid-Infrared Free-Electron Laser

Wavelength stability of free-electron lasers (FELs) is one of the important parameters for various applications. In this paper we describe two different methods to diagnose the wavelength stability of a mid-infrared (MIR) FEL. The first one is based on autocorrelation which is usually used to measure the pulse duration, and the second one is based on frequency upconversion through sum-frequency mixing (SFM).

preprint2013arXiv

Effects of laser polarization on photoelectron angular distribution through laser-induced continuum structure

We theoretically investigate the effects of laser polarization on photoelectron angular distribution through laser-induced continuum structure. We focus on a polarization geometry where the probe and dressing lasers are both linearly polarized, and change the relative polarization angle between them. We find that the total ionization yield and the branching ratio into different ionization channels change as a function of the relative polarization angle, and accordingly the photoelectron angular distribution is altered. We present specific results for the $4p_{1/2}$-$6p_{1/2}$ and $4p_{3/2}$-$6p_{3/2}$ systems of the K atom, and show that the change of the polarization angle leads to the significant modification of photoelectron angular distribution.

preprint2013arXiv

Multiphoton ionization of the calcium atom by linearly and circularly polarized laser fields

We theoretically study multiphoton ionization of the Ca atom irradiated by the second (photon energy 3.1 eV) and third (photon energy 4.65 eV) harmonics of Ti:sapphire laser pulses (photon energy 1.55 eV). Because of the dense energy level structure the second and third harmonics of a Ti:sapphire laser are nearly single-photon resonant with the ${4s4p}$ $^1P^o$ and ${4s5p}$ $^1P^o$ states, respectively. Although two-photon ionization takes place through the near-resonant intermediate states with the same symmetry in both cases, it turns out that there are significant differences between them. The photoelectron energy spectra exhibit the absence/presence of substructures. More interestingly, the photoelectron angular distributions clearly show that the main contribution to the ionization processes by the third harmonic arises from the far off-resonant ${4s4p}$ $^1P^o$ state rather than the near-resonant ${4s5p}$ $^1P^o$ state. These findings can be attributed to the fact that the dipole moment for the ${4s^2}$ $^1S^e$ - ${4s5p}$ $^1P^o$ transition is much smaller than that for the ${4s^2}$ $^1S^e$ - ${4s4p}$ $^1P^o$ transition.

preprint2013arXiv

Multiphoton ionization through the triplet states of Mg by linearly and circularly polarized laser pulses

We theoretically study multiphoton ionization through the triplet states of Mg by linearly polarized (LP) and circularly polarized (CP) fs laser pulses. After the construction of the atomic basis using the frozen-core Hartree-Fock potential (FCHFP) as well as the model potential (MP) approaches for both singlet and triplet series which show rather good agreements with the existing data in terms of state energies and dipole matrix elements, we solve time-dependent Schrödinger equations with $3s3p$ $^{3}P_{1}$ as an initial state, and calculate the total ionization yield and photoelectron energy spectra (PES).

preprint2013arXiv

Two-, three-, and four-photon ionization of Mg in the circularly and linearly polarized laser fields: Comparative study using the Hartree-Fock and model potentials

We theoretically study multiphoton ionization of Mg in the circularly as well as the linearly polarized laser fields. Specifically two-, three-, and four-photon ionization cross sections from the ground and first excited states are calculated as a function of photon energy. Calculations are performed using the frozen-core Hartree-Fock and also the model potential approaches and the results are compared. We find that the model potential approach provide results as good as or even slightly better than those by the frozen-core Hartree-Fock approach. We also report the relative ratios of the ionization cross sections by the circularly and linearly polarized laser fields as a function of photon energy, which exhibit clear effects of electron correlations.

preprint2012arXiv

Single-shot spectra of temporally selected micropulses from a mid-infrared free-electron laser by upconversion

We demonstrate the measurement of single-shot spectra of temporally selected micropulses from a mid-infrared (MIR) free-electron laser (FEL) by upconversion. We achieve the upconversion of FEL pulses at 11 μm using externally synchronized Nd:YAG or microchip laser pulses at 1064 nm to produce sum-frequency mixing (SFM) signals at 970 nm, which are detected by a compact CCD spectrometer without an intensifier. Our experimental system is very cost-effective, and allows us to obtain the laser spectra of selected micropulses at any temporal position within a single macropulse from an oscillator-type FEL.