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Takashi Komine

Takashi Komine appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

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preprint2021arXiv

Thermoelectric refrigerator based on asymmetric surfaces of a magnetic topological insulator

Thermoelectric (TE) refrigeration such as Peltier cooler enables a unique opportunity in electric energy to directly convert thermal energy. Here, we propose a TE module with both refrigeration and power generation modes by utilizing asymmetric surfaces of a magnetic topological insulator (quantum anomalous Hall insulator) with a periodic array of hollows filled with two different dielectrics. Based on the Boltzmann transport theory, we show that its efficiency, i.e., the dimensionless figure of merit ZT exceeds 1 in the low-temperature regime below 300 K. The proposed device could be utilized as a heat management device that requires precise temperature control in small-scale cooling.

preprint2020arXiv

Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures

Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods are presented for switching the magnetization in topological insulator (TI)/magnetic-TI hybrid systems. The magnetic anisotropy energy in magnetic TIs is formulated analytically as a function of the Fermi energy, and it is confirmed that the out-of-plane magnetization is always favored for the partially occupied surface band. Also proposed is a transistor-like device with the functionality of a nonvolatile magnetic memory that uses voltage-driven writing and the (quantum) anomalous Hall effect for readout. For the magnetization reversal, by using parameters of Cr-doped Bi_{1-x}Sb_{x})_{2}Te_{3}, the estimated source-drain current density and gate voltage are of the orders of $10^4$--$10^5$~A/cm$^2$ and 0.1~V, respectively, below 20~K and the writing requires no external magnetic field. Also discussed is the possibility of magnetization switching by the proposed method in TI/ferromagnetic-insulator bilayers with the magnetic proximity effect.

preprint2016arXiv

Tight-binding theory of surface spin states on bismuth thin films

The surface spin states for bismuth thin films were investigated using an $sp^3$ tight-binding model. The model explains the experimental observations using angle-resolved photoemission spectroscopy, including the Fermi surface, the band structure with Rashba spin splitting, and the quantum confinement in the energy band gap of the surface states. A large out-of-plane spin component also appears. The surface states penetrate inside the film to within approximately a few bilayers near the Brillouin-zone center, whereas they reach the center of the film near the Brillouin-zone boundary.